Sedki Amor

Amor, Sedki ; Kilchytska, Valeriya ; Tounsi, Fares ; André, Nicolas ; Machhout, M. ; Francis, Laurent ; Flandre, Denis. Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing. In: Solid-State Electronics, Vol. Journal pre proof, p. 20 (2022). doi:10.1016/j.sse.2022.108300 (Accepté/Sous presse).

http://hdl.handle.net/2078.1/260042

Sabri Alirezaei, Iman ; André, Nicolas ; Amor, Sedki ; Gérard, Pierre ; Flandre, Denis. An Ultra-Thin Ultraviolet Enhanced Backside- Illuminated Single-Photon Avalanche Diode with 650nm-Thin Silicon Body Based on SOI Technology. In: IEEE Journal of Selected Topics in Quantum Electronics, , p. 11 (2021). doi:10.1109/JSTQE.2021.3129274.

http://hdl.handle.net/2078.1/253906

Amor, Sedki ; Kilchytska, Valeriya ; Flandre, Denis ; Galy, Philippe. Trap Recovery by in-Situ Annealing in Fully-Depleted MOSFET With Active Silicide Resistor. In: IEEE Electron Device Letters, Vol. 42, no.7, p. 1085-1088 (2021). doi:10.1109/LED.2021.3079244.

http://hdl.handle.net/2078.1/250630

Amor, Sedki ; André, Nicolas ; Gérard, Pierre ; Ali, S.Z. ; Udrea, F. ; Tounsi, F. ; Mezghani, B. ; Francis, laurent ; Flandre, Denis. Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C. In: Semiconductor Science and Technology, Vol. 32, no.1, p. 9 (19/12/2016). doi:10.1088/1361-6641/32/1/014001.

http://hdl.handle.net/2078.1/181119