Public Thesis Defense of Massinissa NABET - ICTEAM

Enhanced High-Resistivity Silicon-Based Substrates for RF and mmWave FD-SOI Circuits by Massinissa NABET

Mercredi 26 février 2025 à 16h15 – Auditoire SUD19, Croix du Sud à 1348 Louvain-la-Neuve

This thesis examines mobile phone advancements, focusing on FEMs, RF transceivers, and SoCs for efficient signal management. It highlights CMOS technology, emphasizing the silicon substrate's impact on RF performance.
This work highlights advancements in SOI technology, with the trap-rich eSI™ substrate essential for RF switches in mobile phones. While effective in PDSOI, its integration into FDSOI faces challenges, including increased reverse current, thermal degradation, and high costs, despite FDSOI’s benefits of shorter gate lengths, higher transition frequencies, and mmWave compatibility.
To overcome these limitations, this thesis explores FDSOI-compatible substrates, including FE passivation, smart buried PN junctions, and double-BOX, validated through experiments and industrial processes. Additionally, gold-doped and porous silicon are evaluated for enhancing RF performance in highly doped substrates.
This research involves designing and evaluating RF switches, power amplifiers, and mixers using 22FDX® and 28FDSOI technologies to assess the impact of innovative substrates on RF performance. By deepening the understanding of substrate technology and its influence on RF circuits, this work provides valuable insights into advancing mobile technology and enhancing RF performance.Jury members:
Prof. Jean-Pierre Raskin (UCLouvain), supervisor
Prof. Laurent Francis (UCLouvain), chairperson
Prof. Denis Flandre (UCLouvain), secretary
Dr. Valeriya Kilchytska (UCLouvain)
Prof. Dimitri Lederer (UCLouvain)
Dr. Alexandre Siligaris (CEA-Leti, France)
Prof. Piet Wambacq (IMEC, Belgium)
Pay attention: the public defense of Massinissa Nabet will also take place in the form of a videoconference.