Nicolas Reckinger

Reckinger, Nicolas ; Hackens, Benoît. Identifying and abating copper foil impurities to optimize graphene growth. In: Applied Surface Science, Vol. 641, no.1, p. 158555 (2023). doi:10.1016/j.apsusc.2023.158555.

http://hdl.handle.net/2078.1/278476

Tang, Xiaohui ; Raskin, Jean-Pierre ; Reckinger, Nicolas ; Yan, Yiyi ; André,Nicolas ; Lahem, Driss ; Debliquy, Marc. Enhanced Gas Detection by Altering Gate Voltage Polarity of Polypyrrole/Graphene Field-Effect Transistor Sensor. In: Chemosensors, Vol. 10, no.11, p. 467 (2022). doi:10.3390/chemosensors10110467.

http://hdl.handle.net/2078.1/269245

Sarrazin, Michaël ; Septembre, Ismaël ; HENDRICKX, Anthony ; Reckinger, Nicolas ; Dellieu, Louis ; Fleury, Guillaume ; Seassal, Christian ; Mazurczyk, Radoslaw ; Faniel, Sébastien ; Devouge, Sabrina ; Voué, Michel ; Deparis, Olivier. Toward an experimental proof of superhydrophobicity enhanced by quantum fluctuations freezing on a broadbandabsorber metamaterial. In: Journal of Applied Physics, Vol. 128, no.204303, p. 204301-1à9 (2020). doi:10.1063/5.0021541.

http://hdl.handle.net/2078/244724

Tang, Xiaohui ; Haddad, Pierre-Antoine ; Mager, Nathalie ; Geng, Xin ; Reckinger, Nicolas ; Hermans, Sophie ; Debliquy, Marc ; Raskin, Jean-Pierre. Chemically deposited palladium nanoparticles on graphene for hydrogen sensor applications. In: Scientific Reports, Vol. 9, no.1, p. 3653 (2019). doi:10.1038/s41598-019-40257-7.

http://hdl.handle.net/2078.1/216783

Li, Guoli ; André, Nicolas ; Huet, Benjamin ; Delhaye, Thibault ; Reckinger, Nicolas ; Francis, Laurent ; Lioa, Lei ; Raskin, Jean-Pierre ; Zeng, Yun ; Flandre, Denis. Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Sibased photodiode. In: Journal of Physics D: Applied Physics, Vol. 52, no. 24, p. 7 (2019). doi:10.1088/1361-6463/ab12b8. doi:10.1088/1361-6463/ab12b8.

http://hdl.handle.net/2078.1/215654

Cabosart, Damien ; Felten, Alexandre ; Reckinger, Nicolas ; Iordanescu, Andra-Gabriela ; Toussaint, Sébastien ; Faniel, Sébastien ; Hackens, Benoît. Recurrent Quantum Scars in a Mesoscopic Graphene Ring. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 17, no.3, p. 1344-1349 (2017). doi:10.1021/acs.nanolett.6b03725.

http://hdl.handle.net/2078.1/183910

Reckinger, Nicolas ; Tang, Xiaohui ; Joucken, Frédéric ; Lajaunie, Luc ; Arenal, Raul ; Dubois, Emmanuel ; Hackens, Benoît ; Henrard, Luc ; Colomer, Jean-François. Oxidation-assisted graphene heteroepitaxy on copper foil. In: Nanoscale, Vol. 8, no.44, p. 18751-18759 (2016). doi:10.1039/c6nr02936a.

http://hdl.handle.net/2078.1/177801

Lobet , Michaël ; Sarrazin, Michaël ; Cecchet, Francesca ; Reckinger, Nicolas ; Vlad, Alexandru ; Colomer, Jean-François ; Lis, Dan. Probing Graphene χ(2) Using a Gold Photon Sieve . In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 16, p. 48-54 (2016). doi:10.1021/acs.nanolett.5b02494.

http://hdl.handle.net/2078.1/170385

Tang, Xiaohui ; Reckinger, Nicolas ; Poncelet, Olivier ; Louette, Pierre ; Ureña Begara, Fernando ; Idrissi, Hosni ; Turner, Stuart ; Cabosart, Damien ; Colomer, Jean-François ; Raskin, Jean-Pierre ; Hackens, Benoît ; Francis, Laurent. Damage evaluation in graphene underlying atomic layer deposition dielectrics. In: Scientific Reports, Vol. 5, no. 13523, p. 12 (2015). doi:10.1038/srep13523.

http://hdl.handle.net/2078.1/164971

Tang, Xiaohui ; Francis, Laurent ; Dutu, Constantin Augustin ; Reckinger, Nicolas ; Raskin, Jean-Pierre. Self-formation of sub-10 nm nanogaps based on silicidation. In: Nanotechnology, Vol. 25, no.115201, p. 115201-1/9 (24/02/2014). doi:10.1088/0957-4484/25/11/115201.

http://hdl.handle.net/2078.1/140305

Dutu, Constantin Augustin ; Vlad, Alexandru ; Reckinger, Nicolas ; Flandre, Denis ; Raskin, Jean-Pierre ; Melinte, Sorin. Tuning the surface conditioning of trapezoidally shaped silicon nanowires by (3-aminopropyl)triethoxysilane.. In: Applied Physics Letters, Vol. 104, no. 2, p. 023502 (4). doi:10.1063/1.4861598.

http://hdl.handle.net/2078.1/138025

Tang, Xiaohui ; Raskin, Jean-Pierre ; Reckinger, Nicolas ; Dai, Bing ; Francis, Laurent. A new fabrication method for elevated source/drain junctionless transistors. In: Journal of Physics D: Applied Physics, Vol. 46, no.165101, p. 7 (27/03/2013). doi:10.1088/0022-3727/46/16/165101.

http://hdl.handle.net/2078.1/126931

Reckinger, Nicolas ; Vlad, Alexandru ; Melinte, Sorin ; Colomer, Jean-François ; Sarrazin, Michaël. Graphene-coated holey metal films: Tunable molecular sensing by surface plasmon resonance.. In: Applied Physics Letters, Vol. 102, no. 21, p. 211108(4) (30/05/2013). doi:10.1063/1.4808095.

http://hdl.handle.net/2078.1/130356

Walewyns, Thomas ; Reckinger, Nicolas ; Ryelandt, Sophie ; Pardoen, Thomas ; Raskin, Jean-Pierre ; Francis, Laurent. Polyimide as a versatile enabling material for microsystems fabrication: surface micromachining and electrodeposited nanowires integration. In: Journal of Micromechanics and Microengineering : structures, devices & systems, Vol. 23, no. 9, p. 12 (09/08/2013). doi:10.1088/0960-1317/23/9/095021.

http://hdl.handle.net/2078.1/132898

Reckinger, Nicolas ; Felten, Alexandre ; Nascimento Santos, Cristiane ; Hackens, Benoît ; Colomer, Jean-François. The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition. In: Carbon Materials : chemistry and physics, Vol. 63, p. 84-91 (June 24 (June 24, 2013). doi:10.1016/j.carbon.2013.06.042.

http://hdl.handle.net/2078.1/132948

Reckinger, Nicolas ; Dutu, Constantin Augustin ; Tang, Xiaohui ; Dubois, E. ; Yarekha, D.A. ; Godey, S. ; Nougaret, Laurianne ; Lacszcz, J. ; Ratajczak, J. ; Raskin, Jean-Pierre. Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer. In: Thin Solid Films, Vol. 520, no.13, pp. 4501-4505 (April). doi:10.1016/j.tsf.2012.02.076.

http://hdl.handle.net/2078/118676

Tang, Xiaohui ; Krzeminski, Christophe ; Lecavalier des Etangs-Levallois, Aurélien ; Chen, Zhenkun ; Dubois, Emmanuel ; Kasper, Erich ; Karmous, Alim ; Reckinger, Nicolas ; Flandre, Denis ; Francis, Laurent ; Colinge, Jean-Pierre ; Raskin, Jean-Pierre. Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 11, no. 11, p. 4520-4526 (3 octobre 2011). doi:10.1021/nl202434k.

http://hdl.handle.net/2078.1/93789

Reckinger, Nicolas ; Tang, Xiaohui ; Godey, Sylvie ; Dubois, Emmanuel ; Laszcz, Adam ; Ratajczak, Jacek ; Vlad, Alexandru ; Dutu, Constantin Augustin ; Raskin, Jean-Pierre. Erbium Silicide Growth in the Presence of Residual Oxygen. In: Journal of the Electrochemical Society, Vol. 158, no. 7, p. H715-H723 (11/05/2011). doi:10.1149/1.3585777.

http://hdl.handle.net/2078.1/85012

Reckinger, Nicolas ; Tang, Xiaohui ; Dubois, Emmanuel ; Larrieu, Guilhem ; Flandre, Denis ; Raskin, Jean-Pierre ; Afzalian, Aryan. Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width. In: Applied Physics Letters, Vol. 98, no. 11, p. 112102 (16 March 2011). doi:10.1063/1.3567546.

http://hdl.handle.net/2078.1/70970

Reckinger, Nicolas ; Poleunis, Claude ; Dubois, Emmanuel ; Dutu, Constantin Augustin ; Tang, Xiaohui ; Delcorte, Arnaud ; Raskin, Jean-Pierre. Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation. In: Applied Physics Letters, Vol. 99, no. 1, p. 012110 (1-3) (16/06/2011). doi:10.1063/1.3608159.

http://hdl.handle.net/2078.1/84993

Tang, Xiaohui ; Bayot, Vincent ; Reckinger, Nicolas ; Flandre, Denis ; Raskin, Jean-Pierre ; Dubois, Emmanuel ; Nysten, Bernard. A Simple Method for Measuring Si-Fin Sidewall Roughness by AFM. In: IEEE Transactions on Nanotechnology, Vol. 8, no. 5, p. 611-616 (2009). doi:10.1109/TNANO.2009.2021064.

http://hdl.handle.net/2078.1/35319

Tang, Xiaohui ; Flandre, Denis ; Reckinger, Nicolas ; Bayot, Vincent ; Dubois, Emmanuel ; Yarekha, D. A. ; Larrieu, Guilhem ; Lecestre, A. ; Ratajczak, J. ; Breil, N. ; Passi, Vikram ; Raskin, Jean-Pierre. An electrical evaluation method for the silicidation of silicon nanowires. In: Applied Physics Letters, Vol. 95, no. 2 (2009). doi:10.1063/1.3171929.

http://hdl.handle.net/2078.1/35467

Larrieu, Guilhem ; Yarekha, Dmitro A. ; Dubois, Emmanuel ; Breil, Nicolas ; Reckinger, Nicolas ; Tang, Xiaohui ; Halimaoui, Aomar. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. In: ECS Transactions, Vol. 19, no. 4, p. 201-207 (2009). doi:10.1149/1.3117410.

http://hdl.handle.net/2078.1/130055

Krzeminski, Christophe ; Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Dubois, Emmanuel. Process Optimization and Downscaling of a Single-Electron Single Dot Memory. In: IEEE Transactions on Nanotechnology, Vol. 8, no. 6, p. 737-748 (2009). doi:10.1109/TNANO.2009.2021653.

http://hdl.handle.net/2078.1/35144

Reckinger, Nicolas ; Tang, Xiaohui ; Bayot, Vincent ; Yarekha, Dmitri A. ; Dubois, Emmanuel ; Godey, Sylvie ; Wallart, Xavier ; Larrieu, Guilhem ; Laszcz, Adam ; Ratajczak, Jacek ; Jacques, Pascal ; Raskin, Jean-Pierre. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing. In: Applied Physics Letters, Vol. 94, no. 19 (2009). doi:10.1063/1.3136849.

http://hdl.handle.net/2078.1/35572

Ratajczak, J. ; Laszcz, A. ; Czerwinski, A. ; Katcki, J. ; Tang, Xiaohui ; Reckinger, Nicolas ; Yarekha, N. ; Larrieu, Guillaume ; Dubois, Emmanuel. TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs. In: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, Vol. 116, no.98, p. 89-91 (2009).

http://hdl.handle.net/2078.1/135211

Yarekha, Dmytro A. ; Larrieu, Guilhem ; Breil, Nicolas ; Dublois, Emmanuel ; Godey, Sylvie ; Wallart, Xavier ; Soyer, Caroline ; Remiens, Denis ; Reckinger, Nicolas ; Tang, Xiaohui ; Laszcz, Adam ; Ratjczak, Jacek ; Halimaoui, Aomar. UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET. In: ECS Transactions, Vol. 19, no. 1, p. 339-344 (2009). doi:10.1149/1.3118961.

http://hdl.handle.net/2078.1/130056

Tang, Xiaohui ; Reckinger, Nicolas ; Larrieu, Guilhem ; Dubois, Emmanuel ; Flandre, Denis ; Raskin, Jean-Pierre ; Nysten, Bernard ; Jonas, Alain M. ; Bayot, Vincent. Characterization of ultrathin SOI film and application to short channel MOSFETs. In: Nanotechnology, Vol. 19, no. 16, p. 165703 (2008). doi:10.1088/0957-4484/19/16/165703.

http://hdl.handle.net/2078.1/36731

Reckinger, Nicolas ; Tang, Xiaohui ; Bayot, Vincent ; Yarekha, Dmitri A. ; Dubois, E. ; Godey, Sylvie ; Wallart, Xavier ; Larrieu, Guilhem ; Laszcz, Adam ; Ratajczak, J. ; Raskin, Jean-Pierre. Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap. In: Journal of Applied Physics, Vol. 104, no. 10, p. 103523 (2008). doi:10.1063/1.3010305.

http://hdl.handle.net/2078.1/85667

Vlad, Alexandru ; Mátéfi-Tempfli, Mária ; Antohe, Vlad ; Faniel, Sébastien ; Reckinger, Nicolas ; Olbrechts, Benoit ; Crahay, André ; Bayot, Vincent ; Piraux, Luc ; Melinte, Sorin ; Mátéfi-Tempfli, Stefan. Nanowire-decorated microscale metallic electrodes.. In: Small, Vol. 4, no. 5, p. 557-560 (2008). doi:10.1002/smll.200700724.

http://hdl.handle.net/2078.1/36547

Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Krzeminski, Christophe ; Dubois, Emmanuel ; Villaret, Alexandre ; Bensahel, Daniel-Camille. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices. In: IEEE Transactions on Nanotechnology, Vol. 5, no. 6, p. 649-656 (2006). doi:10.1109/TNANO.2006.883481.

http://hdl.handle.net/2078.1/37906

Tang, Xiaohui ; Katcki, J. ; Dubois, E. ; Reckinger, Nicolas ; Ratajczak, J. ; Larrieu, G. ; Loumaye, Pierre ; Nisole, O ; Bayot, Vincent. Very low Schottky barrier to n-type silicon with PtEr-stack silicide. In: Solid-State Electronics, Vol. 47, no. 11, p. 2105-2111 (2003). doi:10.1016/S0038-1101(03)00256-9.

http://hdl.handle.net/2078.1/40769

Tang, Xiaohui ; Baie, X. ; Colinge, JP. ; Crahay, André ; Katschmarsyj, B ; Scheuren, V ; Spote, David ; Reckinger, Nicolas ; Van de Wiele, F. ; Bayot, Vincent. Self-aligned silicon-on-insulator nano flash memory device. In: Solid-State Electronics, Vol. 44, no. 12, p. 2259-2264 (2000). doi:10.1016/S0038-1101(00)00221-5.

http://hdl.handle.net/2078.1/42942

Dubois, Emmanuel ; Larrieu, Guilhem ; Reckinger, Nicolas ; Tang, Xiaohui ; Vinet, Maud ; Hutin, Louis. Schottky source and drain MOSFETs. In: Deleonibus, Simon (ed.), Future Intelligent Integrated Systems, Pan Stanford Publishing, 2013, 350 pages. 978-9-8144-1142-4.

http://hdl.handle.net/2078.1/135189

Nazarov, Alexei ; Lysenko, V.S. ; Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology. In: Hall, S.; Nazarov, A.N.; Lysenko, V.S., Nanoscaled semiconductor-on-insulator structures and devices, Springer: Berlin (Germany), 2007, p. 251-256. 978-1-4020-6378-7.

http://hdl.handle.net/2078.1/135190

Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. Fabrication of SOI nano devices. In: D.Flandre, A.N.Nazarov, P.L.F.Hemment, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment, Kluwer Academic Publishers: Doordrecht (the netherlands), 2005, p. 333-344.

http://hdl.handle.net/2078.1/135192

Yan, Yiyi ; Reckinger, Nicolas ; Kilchytska, Valeriya ; Flandre, Denis ; Tang, Xiaohui ; Malik, Mohammad Wasil ; Hackens, Benoît ; Raskin, Jean-Pierre. Hexagonal Boron Nitride Memristor based on a nanogap self-formed by silicidation. Mini Colloquia (MQ) on "Memristive Devices", The 6th Symposium on Schottky Barrier MOS Devices (SSBMOS) (Giessen, Germany, du 7/09/2022 au 8/09/2022).

http://hdl.handle.net/2078.1/270747

Toussaint, Sébastien ; Brun-Barrière, Boris ; Cabosart, Damien ; Felten, A. ; Reckinger, Nicolas ; Iordanescu, Andra-Gabriela ; Martins, Federico ; Faniel, Sébastien ; Pala, Marco ; Wallart, X. ; Desplanque, L. ; Sellier, H. ; Huant, S. ; Bayot, Vincent ; Hackens, Benoît. Imaging and tuning electron transport inside nanodevices. 20e Forum des microscopies à sondes locales (Juvignac, du 20/03/2017 au 24/03/2017). In: -, Vol. -, p. - (2017).

http://hdl.handle.net/2078.1/194374

Kryvutsa, Nadzeya ; Reckinger, Nicolas ; Hermans, Sophie ; Hackens, Benoît. Synthesis of CVD graphene decorated with magnetic nanoparticles (poster). Interplatform Workshop on Nanotechnology : from materials to devices (Louvain-la-Neuve (Belgium), 29/01/2016).

http://hdl.handle.net/2078.1/194160

Tang, X. ; Reckinger, Nicolas ; Mager, Nathalie ; Vanhorenbeke, Béatrice ; Hermans, Sophie ; Delamare, Romain ; Colomer, Jean-François ; Raskin, Jean-Pierre. Graphene sensor for formaldehyde detection. 2015 International Graphene Innovation Conference (Qingdao (China), du 28/10/2015 au 30/10/2015).

http://hdl.handle.net/2078.1/169268

Tang, Xiaohui ; Reckinger, Nicolas ; Mager, Nathalie ; Vanhorenbeke, Béatrice ; Dutu, Constantin Augustin ; Hermans, Sophie ; Colomer, Jean-François ; Raskin, Jean-Pierre. Investigation of selective formaldehyde detection by graphene sensors. 1st International Conference Functional Integrated nano Systems (NANOFIS 2014) (Graz (Austria), du 03/12/2014 au 05/12/2014). In: , 2014.

http://hdl.handle.net/2078.1/152933

Tang, Xiaohui ; Francis, Laurent ; Dutu, Constantin Augustin ; Reckinger, Nicolas ; Raskin, Jean-Pierre. Sub-10-nm Nanogap Fabrication by Silicidation. 13th IEEE International Conference on Nanotechnology 2013 (Beijing (China), du 05/08/2013 au 08/08/2013). In: Proceedings of the 13th IEEE International Conference on Nanotechnology 2013, IEEE, 2013, p. 570-573. doi:10.1109/NANO.2013.6720811.

http://hdl.handle.net/2078.1/133894

Walewyns, Thomas ; Reckinger, Nicolas ; Ryelandt, Sophie ; Pardoen, Thomas ; Raskin, Jean-Pierre ; Francis, Laurent. Polyimide as versatile enabling material for microsystems fabrication: electrodeposited nanowires integration and surface micromachining. 5ème Colloque du Laboratoire International Associé “Nanotechnologies & Nanosystèmes (Orford (Québec), du 15/07/2012 au 18/07/2012). In: Proceedings du 5ème Colloque du Laboratoire International Associé “Nanotechnologies & Nanosystèmes, 2012, p. 103 - Paper GE21.

http://hdl.handle.net/2078/123674

Laszcz, A. ; Ratajczak, J. ; Czerwinski, A. ; Katcki, J. ; Srot, V. ; Phillipp, F. ; van Aken, P.A. ; Yarekha, D. ; Reckinger, Nicolas ; Larrieu, G. ; Dubois, Emmanuel. Characterization of ytterbium silicide formed in ultra high vacuum. 16th International Conference on Microscopy of Semiconducting Materials (Oxford, UK, 17-20 March 2009). In: 16th International Conference on Microscopy of Semiconducting Materials, Iop publishing ltd., 2010, Vol. 209, 012056 (4 pp.). doi:10.1088/1742-6596/209/1/012056.

http://hdl.handle.net/2078.1/67422

Ratajczak, J. ; Laszcz, A. ; Czerwinski, A. ; Katcki, J. ; Phillipp, F. ; Van Aken, P. A. ; Reckinger, Nicolas ; Dubois, Emmanuel. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. 13th International Conference on Electron Microscopy (Zakopane(Poland), Jun 08-11, 2008). In: Journal of Microscopy, Vol. 237, no. 3, p. 379-383 (2010). doi:10.1111/j.1365-2818.2009.03264.x.

http://hdl.handle.net/2078.1/58635

Larrieu, Guilhem ; Yarekha, Dmytro A. ; Dubois, Emmanuel ; Breil, Nicolas ; Reckinger, Nicolas ; Tang, Xiaohui ; Halimaoui, Aomar. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. Meeting of the Electrochemical Society 2009 (San Francisco (USA), du 24/05/2009 au 29/05/2009). In: , 2009.

http://hdl.handle.net/2078.1/135228

Dubois, Emmanuel ; Larrieu, Guilhem ; Breil, Nicolas ; Valentin, R. ; Danneville, F. ; Yarekha, D. ; Reckinger, Nicolas ; Tang, Xiaohui ; Halimaoui, Aomar ; Rengel, R. ; Pascual, E. ; Pouydebasque, A. ; Wallart, X. ; Godey, S. ; Ratajczak, J. ; Laszcz, A. ; Katcki, J. ; Raskin, Jean-Pierre ; Dambrine, Gilles ; Cros, A. ; Skotnicki, T.. Metallic Source/Drain Architecture for Advanced MOS Technology: an overview of METAMOS results. 8th Diagnostics & Yield Symposium (Warszaw (Poland), du 22/06/2009 au 24/06/2009). In: Proceedings of the 8th Diagnostics & Yield Symposium, 2009.

http://hdl.handle.net/2078.1/91559

Tang, Xiaohui ; Ravau, F. ; Dubois, E. ; Kasper, E. ; Karmous, A. ; Reckinger, Nicolas ; Raskin, Jean-Pierre. Self-aligned single-electron memory fabrication based on Si/SiGe/Si heterostructures. 35th International Conference on Micro & Nano Engineering – MNE’09 (Ghent (Belgium), du 28/09/2009 au 01/10/2009). In: Proceedings of the 35th International Conference on Micro & Nano Engineering – MNE’09, 2009, p. paper P-NANO-60.

http://hdl.handle.net/2078.1/91394

Tang, Xiaohui ; Ravau, F. ; Dubois, E. ; Kasper, E. ; Karmous, A. ; Reckinger, Nicolas ; Raskin, Jean-Pierre. Self-aligned single-electron memory fabrication based on Si/SiGe/Si heterostructures. Workshop on Templated Self-Organization: processing, characterization and modeling (Stuttgart (Germany), du 25/06/2009 au 26/06/2009). In: Proceedings of the Workshop on Templated Self-Organization: processing, characterization and modeling, 2009.

http://hdl.handle.net/2078.1/123509

Ratajczak, J. ; Laszcz, A. ; Czerwinski, A. ; Katcki, J. ; Tang, Xiaohui ; Reckinger, Nicolas ; Yarekha, Dmytro A. ; Larrieu, Guilem ; Dubois, Emmanuel. TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs. 3rd National Conference on Nanotechnology (Warsaw(Poland), du 22/06/2009 au 26/06/2009). In: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, Vol. 116, p. S89-S91 (2009). In: , Polish Acad Sciences Inst Physics: Warsaw, 2009.

http://hdl.handle.net/2078.1/58645

Yarekha, Dmytro A. ; Larrieu, Guilhem ; Nreil, Nicolas ; Dubois, Emmanuel ; Godey, S. ; Wallart, X. ; Soyer, C. ; Remiens, D. ; Reckinger, Nicolas ; Tang, Xiaohui ; Laszcz, A. ; Ratajczak, J. ; Halimaoui, Aomar. UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET. Meeting of the Electrochemical Society 2009 (San Francisco (USA), du 24/05/2009 au 29/05/2009). In: , 2009.

http://hdl.handle.net/2078.1/135229

Larrieu, Guilhem ; Dubois, Emmanuel ; Yarekha, Dmytro ; Breil, Nicolas ; Reckinger, Nicolas ; Tang, Xiaohui ; Ratajczak, Jacek ; Laszcz, Adam. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Symposium on Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices held at the 2008 E-MRS Spring Meeting (Strasbourg (France), du 26/05/2008 au 30/05/2008). In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 154, p. 159-162 (2008). doi:10.1016/j.mseb.2008.10.014.

http://hdl.handle.net/2078.1/59060

Pascual, E. ; Rengel, R. ; Reckinger, Nicolas ; Tang, Xiaohui ; Bayot, Vincent ; Dubois, Emmanuel ; Martin, M.J.. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunneling and temperature. 15th International Conference on Nanoequilibrium Carrier Dynamics in Semiconductors (HCTS-15) (Tokyo (Japan), 2007). In: Physica status solidi, Wiley: Weinheim, 2007, p. 119-122. doi:10.1002/pssc.200776519.

http://hdl.handle.net/2078.1/135096

Vlad, Alexandru ; Matefi-Tempfli, M. ; Antohe, Vlad ; Faniel, Sébastien ; Crahay, André ; Reckinger, Nicolas ; Olbrechts, B. ; Bayot, Vincent ; Piraux, Luc ; Matefi-Tempfli, S. ; Melinte, Sorin. Controlled growth of single nanowires within a supported alumina template: towards circuit integration. European Materials Research Society Spring Meeting (Strasbourg, France, du 18/05/2007 au 01/06/2007).

http://hdl.handle.net/2078.1/197182

Breil, Nicolas ; Dubois, Emmanuel ; Reckinger, Nicolas ; Tang, Xiaohui ; Larrieu, Guilhem ; Pouydebasque, Aomar ; Stotnicki, T.. Erbium silicide formation under ultra high vacuum. 16th European Workshop on Materials for Advanced Metallization (MAM 2007) (Bruges (Belgium), du 04/03/2007 au 07/03/2007). In: Proceeding of the 16th European Workshop on Materials for Advanced Metallization (MAM 2007), 2007.

http://hdl.handle.net/2078.1/130111

Dubois, E. ; Larrieu, G. ; Breil, N. ; Valentin, R. ; Danneville, E. ; Ostling, M. ; Hellström, P.E. ; Reckinger, Nicolas ; Tang, Xiaohui ; Raskin, Jean-Pierre. Metallic Source/Drain architecture: status and prospects. 37th European Solid-State Device Research Conference – ESSDERC 2007, SINANO Workshop entitled : Nanoscale CMOS and Beyond-CMOS Nanodevices (Munich (Germany), 14/09/2007). In: Proceedings of the 37th European Solid-State Device Research Conference – ESSDERC 2007, SINANO Workshop entitled : Nanoscale CMOS and Beyond-CMOS Nanodevices, 2007, p. Paper 2.

http://hdl.handle.net/2078.1/123300

Nazarov, A.N. ; Lysenko, V.S. ; Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum Dot Technology. NATO Advanced Research Workshop (Kiev (Ukraine), du 09/09/2006 au 12/09/2006). In: Proceedings of the NATO Advanced Research Workshop, 2006, p. 3.

http://hdl.handle.net/2078.1/135097

Knoch, J. ; Dubois, Emmanuel ; Larrieu, Guillaume ; Breil, N. ; Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. Recent advances in metallic source-drain engineering. SINANO-ESSDERC Workshop 2005 (Grenoble (France), 16/09/2005). In: Proceedings of the SINANO-ESSDERC Workshop 2005, 2005, 33.

http://hdl.handle.net/2078.1/135120

Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Dubois, Emmanuel ; Krzeminski, C. ; Villaret, A. ; Bensahel, D.. Self-aligned single-electron memories. 15th NID Workshop 2005 (Madrid (Spain), du 31/01/2005 au 02/02/2005). In: Proceedings of the 15th NID Workshop 2005, 2005, p. 1.

http://hdl.handle.net/2078.1/135123

Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Dubois, Emmanuel ; Krzeminski, C.. Self-aligned single-electron memories: towards single-electron operation of MOS compatible nano-flash memory devices. SINANO-ESSDERC Workshop 2005 (Grenoble (France), 16/09/2005). In: Proceedings of the SINANO-ESSDERC Workshop 2005, 2005.

http://hdl.handle.net/2078.1/135122

Dubois, Emmanuel ; Darrieu, Guilhem ; Krzeminski, C. ; Baie, Xavier ; Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. Integration of Low Schottky Barrier Source/Drain for Advanced MOS Technology. 13TH NID Workshop 2004 (Athens (Greece), du 04/02/2004 au 06/02/2004). In: Proceedings of the 13TH NID Workshop 2004, 2004.

http://hdl.handle.net/2078.1/135147

Krzeminski, A. ; Dubois, Emmanuel ; Tang, Xiaohui ; Reckinger, Nicolas ; Crahay, André ; Bayot, Vincent. Optimisation and simulation of an alternative nano-flash memory: the SASEM device. MRS Fall Meeting 2004 (Boston (USA), du 28/11/2004 au 02/12/2004). In: Proceedings of the MRS Fall Meeting 2004, 2004, p. 6.

http://hdl.handle.net/2078.1/135124

Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. SOI nano device fabrication. NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment 2004 (Kiev (Ukraine), du 26/04/2004 au 30/04/2004). In: Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment 2004, 2004.

http://hdl.handle.net/2078.1/135126

Krzeminski, C. ; Dubois, Emmanuel ; Tang, Xiaohui ; Reckinger, Nicolas ; Crahay, André ; Bayot, Vincent. Simulation et optimisation d'une mémoire flash nanométrique. Journées Nationales Nanoélectronique (Aussois (France), du 09/05/2004 au 13/05/2004). In: Proceedings des Journées Nationales Nanoélectronique 2004, 2004.

http://hdl.handle.net/2078.1/130114

Reckinger, Nicolas. Fabrication and characterization of rare-earth silicide thin films, prom. : Raskin, Jean-Pierre ; Bayot, Vincent, 11/02/2011.

http://hdl.handle.net/2078.1/70742