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- Martin Lefebvre
Martin Lefebvre
Collaborateur scientifique
2024
Lefebvre, Martin ; Bol, David. A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-µm Bulk and 22-nm FD-SOI. In: IEEE Journal of Solid-State Circuits, Vol. 59, no. 11, p. 3752-3766 (November 2024). doi:10.1109/jssc.2024.3402960.
2024
Lefebvre, Martin ; Bol, David. A nA-Range Area-Efficient Sub-100-ppm/°C Peaking Current Reference Using Forward Body Biasing in 0.11-µm Bulk and 22-nm FD-SOI. In: IEEE Journal of Solid-State Circuits, (2024). doi:10.1109/jssc.2024.3406423 (Accepté/Sous presse).
2024
Lefebvre, Martin ; Bol, David. MANTIS: A Mixed-Signal Near-Sensor Convolutional Imager SoC Using Charge-Domain 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection. In: IEEE Journal of Solid State Circuits, (2024). doi:10.1109/JSSC.2024.3484766 (Accepté/Sous presse).
2023
Lefebvre, Martin ; Flandre, Denis ; Bol, David. A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI. In: IEEE Journal of Solid-State Circuits, Vol. 58, no. 8, p. 2239-2251 (August 2023). doi:10.1109/jssc.2023.3240209.
2023
Kneip, Adrian ; Lefebvre, Martin ; Verecken, Julien ; Bol, David. IMPACT: A 1-to-4b 813-TOPS/W 22-nm FD-SOI Compute-in-Memory CNN Accelerator Featuring a 4.2-POPS/W 146-TOPS/mm² CIM-SRAM With Multi-Bit Analog Batch-Normalization. In: IEEE Journal of Solid State Circuits, Vol. 58, no.7, p. 1871-1884 (2023). doi:10.1109/JSSC.2023.3269098.
2022
Lefebvre, Martin ; Bol, David. A Family of Current References Based on 2T Voltage References: Demonstration in 0.18-μm With 0.1-nA PTAT and 1.1-μA CWT 38-ppm/°C Designs. In: IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 69, no. 8, p. 3237-3250 (August 2022). doi:10.1109/TCSI.2022.3172647.
2021
Frenkel, Charlotte ; Lefebvre, Martin (co-first author) ; Bol, David. Learning Without Feedback: Fixed Random Learning Signals Allow for Feedforward Training of Deep Neural Networks. In: Frontiers in Neuroscience, Vol. 15, p. 629892 (2021). doi:10.3389/fnins.2021.629892.
2019
Frenkel, Charlotte ; Lefebvre, Martin ; Legat, Jean-Didier ; Bol, David. A 0.086-mm2 12.7-pJ/SOP 64k-Synapse 256-Neuron Online-Learning Digital Spiking Neuromorphic Processor in 28-nm CMOS. In: IEEE Transactions on Biomedical Circuits and Systems, Vol. 13, no.1, p. 145-158 (2019). doi:10.1109/TBCAS.2018.2880425.
2018
Van Verdeghem, Joachim ; Lefebvre, Martin ; Kluyskens, Virginie ; Dehez, Bruno. Dynamical Modelling of Passively Levitated Electrodynamic Thrust Self-Bearing Machines. In: IEEE Transactions on Industry Applications, Vol. 55, no. 2, p. 1447-1460 (March-April 2019). doi:10.1109/TIA.2018.2880422.
2024
Lefebvre, Martin ; Bol, David. A Mixed-Signal Near-Sensor Convolutional Imager SoC with Charge-Based 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection. 2024 IEEE Custom Integrated Circuits Conference (CICC) (Denver (CO, USA), du 21/04/2024 au 24/04/2024). In: Proceedings of the 2024 IEEE Custom Integrated Circuits Conference (CICC), p. 1-2. doi:10.1109/CICC60959.2024.10528961.
2022
Lefebvre, Martin ; Flandre, Denis ; Bol, David. A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI. ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) (Milan (Italy), du 19/09/2022 au 22/09/2022). In: Proceedings of the ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), p. 469-472. doi:10.1109/ESSCIRC55480.2022.9911369.
2022
Kneip, Adrian ; Lefebvre, Martin ; Verecken, Julien ; Bol, David. A 1-to-4b 16.8-POPS/W 473-TOPS/mm2 6T-based In-Memory Computing SRAM in 22nm FD-SOI with Multi-Bit Analog Batch-Normalization. ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) (Milan, Italy, du 19/09/2022 au 22/09/2022). In: ESSCIRC 2022, 2022. 978-1-6654-8494-7/2. doi:10.1109/ESSCIRC55480.2022.9911348.
2021
Lefebvre, Martin ; Moreau, Ludovic ; Dekimpe, Rémi ; Bol, David. A 0.2-to-3.6TOPS/W Programmable Convolutional Imager SoC with In-Sensor Current-Domain Ternary-Weighted MAC Operations for Feature Extraction and Region-of-Interest Detection. 2021 IEEE International Solid-State Circuits Conference (San Francisco (USA), du 13/02/2021 au 22/02/2021). In: Proceedings of the 2021 IEEE International Solid-State Circuits Conference, p. 118-119.
2021
Dekimpe, Rémi ; Schramme, Maxime ; Lefebvre, Martin ; Kneip, Adrian ; Saeidi, Roghayeh ; Xhonneux, Mathieu ; Moreau, Ludovic ; Gonzalez Gonzalez, Marco Antonio ; Pirson, Thibault ; Bol, David. SleepRider: a 5.5µW/MHz Cortex-M4 MCU in 28nm FD-SOI with ULP SRAM, Biomedical AFE and Fully-Integrated Power, Clock and Back-Bias Management. 2021 Symposium on VLSI Circuits (Kyoto (Japan), du 13/06/2021 au 19/06/2021). In: Proceedings of the 2021 Symposium on VLSI Circuits, p. 2 (28/07/2021). doi:10.23919/VLSICircuits52068.2021.9492365.
2017
Lefebvre, Martin ; Van Verdeghem, Joachim ; Kluyskens, Virginie ; Dehez, Bruno. Dynamic modelling of passive electrodynamic self-bearing axial-flux permanent magnet machines. IEEE International Electric Machines and Drives Conference (IEMDC) (Miami, FL, USA, du 21/05/2017 au 24/05/2017). doi:10.1109/IEMDC.2017.8002151.
2024
Lefebvre, Martin. Area-Efficient nA-to-µA Constant-with-Temperature CMOS Current References for the Internet of Things, prom. : Bol, David, 03/04/2024.
2019
Frenkel, Charlotte ; Lefebvre, Martin ; Bol, David. Learning without feedback: Direct random target projection as a feedback-alignment algorithm with layerwise feedforward training, 2019 (Soumis).