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- Denis Flandre
Denis Flandre
Professeur ordinaire
Short CV
Denis Flandre received the Ms. degree in Electrical Engineering, the Ph.D. degree and the Research Habilitation from the Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium, in 1986, 1990 and 1999, respectively. His doctoral research was on the modelling of Silicon-on-Insulator (SOI) MOS devices for characterization and circuit simulation, his Post-doctoral thesis on a systematic and automated synthesis methodology for MOS analog circuits. Since 2001, he is full-time Professor at UCL.
He is currently involved in the research and development of SOI MOS devices, digital and analog circuits, as well as sensors, MEMS and solar cells, for special applications, more specifically high-speed, ultra low-voltage low-power, microwave, biomedical, radiation-hardened and high-temperature electronics and microsystems. He has authored or co-authored more than 900 technical papers or conference contributions. He is co-inventor of 12 patents. He has organized or lectured many short courses on SOI technology, devices and circuits in universities, industrial companies and conferences. He has received several scientific prizes and best paper awards.
He has participated or coordinated numerous research projects funded by regional and European institutions. He has been a member of several EU Networks of Excellence on High-Temperature Electronics, SOI technology, Nanoelectronics and Micro-nano-technology.
Prof. Flandre is a co-founder of CISSOID, a spin-off company of UCL focusing on SOI and high-reliability integrated circuit design and products. He is scientific advisor of two other UCL start-ups: INCIZE (Semiconductor characterization and modeling for design of digital, analog/RF and harsh environment applications) and e-peas (Energy harvesting and processing solutions for longer battery life, increased robustness in all IoT applications). He is an active member of the SOI Industry Consortium and of the EUROSOI network. He is an IEEE Senior member.
Other activities within UCL :
• Founding member of the “Research Centre in micro- and nano-scale material and electronic devices” (CeRMiN), in 1998.
• UCL founding member UCL of CISSOID spin-off company, in 2000. Scientific advisor of two other UCL start-ups : Incize since 2013 and e-Peas since 2014.
• Member of the Direction Council of the “Centre de Recherches du Cyclotron” since 2000.
• President of the Direction Committee of UCL micro-nano-fabrication cleanrooms (WINFAB) from 2001 to 2012.
• Director of UCL Microelectronics Lab. (≈ 70 persons) from 2003 to 2010.
• Member of the “Commission de valorisation” (COVA) of UCL from 2004 to 2009.
• Scientific coordinator of the programme of excellence NANOTIC of Walloon Region from 2006 to 2011.
• Responsible of the ELEC diploma commission from 2009 to 2015.
- Diplômes
Année Label Institution 1983 Candidat ingénieur civil Université catholique de Louvain 1986 Ingénieur civil électricien Université catholique de Louvain 1991 Docteur en sciences appliquées Université catholique de Louvain 1999 Agrégé de l'enseignement supérieur Université catholique de Louvain
- Les cours
Nom ID Circuits électroniques analogiques et digitaux fondamentaux LELEC1530 Physique des dispositifs électroniques et des lignes de transmission LELEC1755 Opto-electronic and power devices LELEC2330 Electronic analog systems LELEC2532 Advanced Transistors LELEC2541 Seminar in Electronics and Communications LELEC2590 Synthesis of analog integrated circuits LELEC2650
Denis Flandre’s List of major funded research projects
• 1993-1998: Participant in UCL “Action de Recherche Concertée” on high-frequency SOI circuits (promoters: Prof. Colinge and Vanhoenacker).• 1994-1996: Walloon Region Research Project, "Sea-of-gates in CMOS-SOI technology".
• 1994-1995: EUREKA European project, "FAST IC Engineering", with Alcatel SdM (Charleroi), SILEX Barco (LLN), EPFL and EM Microelectronique Marin (Switzerland), Thomson (France)...
• 1996-2000: Walloon Region Research Project, "Mixed analog-digital circuits in CMOS-SOI technology".
• 1996-1998: EUREKA European project, "FASTICE-II", in collaboration with Alcatel SdM (Charleroi), SILEX Barco (LLN), EPFL, CSEM, CERN, MEAD and EM Microelectronique Marin (Switzerland), ISEN-IEMN (France).
• 1996-1997: Tournesol project with ISEN-IEMN (Lille) on the modelling and design of analog circuits in CMOS - SOI technology.
• 1996-2000: Walloon Region First University Project with Alcatel - SdM (Charleroi), "Rad-hard integrated analog circuits"
• 1997-1999: Participant to ESPRIT project "SOI for portable applications and consumer electronics" (SPACE), (prom.: Prof. Colinge and Vanhoenacker), in collaboration with Alcatel-Bell (Anvers), LETI and STM (France).
• 1998-1999: Promoter of a TMR European grant for welcoming a post-doc stay in U.C.L., "Characterization and modelling of thin-film and ultrathin-film double-gate SOI MOS transistors".
• 1998-2001: Responsible for UCL of the Walloon Region Project - ARAMIS "BIOPUCE", in collaboration with the Laboratoire de biochimie et biologie cellulaire (FUNDP), CEA-LETI (Paris), Lambdatech (Namur) and Cis-Bio companies (France).
• 1998-2003: Co-promoter of a UCL “Action de Recherche Concertée” DICE-EMIC-PCPM "Novel semiconductor devices : Nano-electronics and micro-waves" (with Prof. Bayot and Vanhoenacker).
• 1998-2002: Co-promoter of a research program FRFC - Loterie Nationale, "Novel semiconductor devices with reduced dimensions and elevated frequencies for application in mixed analog-digital electronic micro-systems".
• 1998: Research grant of Motorola (USA) to study "SOI technology for low-voltage low-power microwave applications".
• 1998-1999: Research grant of IBM (Boeblingen, Germany) for a project on "SOI circuit design techniques".
• 1999: Promoter UCL of a research funded by EXPRO (UK) for studying high-temperature circuits in SOI technology.
• 1999-2001: Walloon Region Research project, "Microsystems in SOI technology for applications at high temperature".
• 1999-2002: Promoter of a First Spin-off Walloon Region Project aiming at the start of a company specialized in SOI circuits design.
• 2000-2002: Promoter of a IST European project named « MELODICT » on the topic of “ MEMS RF ”, in collaboration with IEMN (Lille), Fh-ISIT (Germany), STM (Italy) and Siemens (Germany).
• 2000-2003: Promoter of a IST EU project named « SPRING » on the topic of analog integrated circuits for metrology, in collaboration with CNM (Sevilla), ENST (Paris) and Schlumberger (Paris).
• 2000-2001: UCL Co-promoter of a ESA project named « TILT », on the effect of transient irradiations on analog components, in collaboration with the Cyclotron research centre of UCL.
• 2000-2002: Promoter of a EUREKA-EURIMUS project named « HERO », on SOI microsystem for measuring magnetic field, in collaboration with EPFL (CH), CEA-LETI (Grenoble), University of Montpellier, Schlumberger (France), Crouzet (France) and EM Marin (CH).
• 2000-2001: Promoter of a Marie Curie Grant for a post-doctoral stay in UCL on “ Nanoscale devices ”.
• 2000: Promoter of a research contract with EM Microélectronique Marin (CH) on the study of SOI circuits for watches.
• 2001: Promoter of a research contract with NEC (Japan) on the design of analog SOI circuits.
• 2001-2003: UCL Co-promoter of a Walloon Region Project named « MEMSACOM », about the realization of microsystems or MEMS for RF applications in SOI technology.
• 2001-2006: UCL Co-promoter of a Walloon Region Project for participation in European MEDEA projects « CMOS SOI 0.12 µm » and « 4G-RADIO » with CISSOID (Belgium), STM (France), Ericsson (Sweden)….
• 2002-2006: UCL Co-promoter and technical coordinator of a EU-FP5-Growth project named « ATHIS» in the field of high-temperature electronics with University of Newcastle (UK), CNM (Spain), CISSOID (Belgium), FIAT (Italy) and X-FAB (Germany).
• 2003-2006: Promoter of a WALEO Walloon Region project, named « OLIGONIC », on DNA biochips, in collaboration with the Laboratoire de biologie cellulaire des FUNDP (Prof. J. Remacle), the PCPM laboratory of UCL (Prof. P. Bertrand) and the Microelectronics Unit of Ulg (Prof. J. Destiné).
• 2003-2007: Promoter of a First Europe Objectif 3 Grant, « SMARTSOI » on memory and high-voltage effects in advanced SOI transistors, in collaboration with CISSOID (LLN) and INPG-Minatec (Grenoble).
• 2003-2007: UCL Co-promoter of a Walloon Region project named « CAIMAN » for participation in EU MEDEA project, « MARQUIS », on multi-antenna communication systems, in collaboration with UCL TELE laboratory (Prof. Vandendorpe, Craeye) and EMIC lab (Prof. Vanhoenacker, Raskin) and Convergix (Liège).
• 2004-2007: Coordinator of the « CAVIMA » project (Réseaux 1 – DGTRE – Walloon Region) on vital, miniaturized and autonomous biomedical sensors, in collaboration with the UCL laboratories EMIC (Prof. Raskin) and TELE (Prof. Macq, Craeye), the CHU et the Microelectronics Unit of Ulg and MULTITEL (Mons).
• 2004-2007: Promoter and WP coordinator of the EU network of excellence « SINANO : Silicon-based nano-devices », in collaboration with 43 EU institutions.
• 2004-2007: Promoter of the FNRS / FRFC project « In-depth experimental investigation of the fabrication and physics of the SOI MOS transistor with symmetrical double gate ».
• 2005-2008: Coordinator of a Walloon Region project named « CROTALE » (for participation in the EU MEDEA project « WITNESS»), on architectures of transceivers for networks of sensors in SOI technology, in collaboration with the UCL laboratories TELE (Prof. Vandendorpe, Craeye) and EMIC (Prof. Vanhoenacker, Raskin), the Microelectronics Unit of FPMS (Mons) and CISSOID (LLN).
• 2005-2008: Promoter of a First Spin-off Walloon Region Grant, named « WINIT » for studying the creation of a spin-off in the field of wireless sensor networks.
• 2005-2010: Co-promoter of a Action de Recherche Concertée DICE-EMIC-IMAP "Multilayered thermo-chemically driven Nano-Electro-Mechanical Systems " (with Prof. Raskin (EMIC) et Pardoen (IMAP)).
• 2005-2007: Co-promoter of the programme of excellence NANOTIC of the Walloon Region and of the sub-project « CITE », on the integration of electronic transduction components for nano-sensors and the extension of the infrastructure of micro-nano-fabrication of UCL.
• 2006-2009: Promoter a European Project named « ADVICE » (Program Aerospace, FP5) targeting the implementation of a network of wireless sensors on a aerodynamic structure, with Cenaero (Belgium), Goodrich (France), EADS (Germany)…
• 2007-2009: Promoter of a First Spin-off Walloon Region Grant named « SENSOI » for studying the creation of a spin-off in the field of integrated sensors.
• 2007-2009: Promoter of 2 sub-projects integrated in the « TELECOM » et « HM » projects of the “Pôle de compétitivité” SKYWIN of the Walloon Region, targeting the industrialisation of radiation-hardened SOI components and miniaturized sensors and MEMS, in aerospace systems.
• 2007-2010: Participant in the project E-USER (Wallonia Information Society Technology 2, « Secured RFID »).
• 2008-2009: AGC Flat Glass Europe, Material Transfer Agreement, Wireless sensor nodes.
• 2008-2011: Promoter of the IISN-FNRS project « Study of the resistance to radiations of fundamental semiconductor structures in view of their integration in future pixel detectors ».
• 2008-2011: Promoter of a FRFC-FNRS Grant « Logistique de la plateforme UCL de micro-nano-fabrication ».
• 2008-2011: Promoter of the EU project EUROSOI , « European platform for low-power applications on Silicon-on-Insulator Technology », coordination action, FP7-ICT, with SOITEC, CISSOID, IMEC, CEA-LETI, University of Tarragona, Granada, INPG…
• 2008-2011: Participant in EU consortium TRIADE, « Development of technology building blocks for structural health monitoring sensing devices in aeronautics », FP7-TRANSPORT- Small or medium-scale focused research project with EADS, PZL, Goodrich, CEA-Liten, ITE, University of Southampton…
• 2008-2011: Promoter of EU project COMON, « Compact Modelling Network », FP7 - Marie Curie Actions—Industry-Academia Partnerships and Pathways, with University of Tarragona, EPFL, Intel…
• 2008-2011: UCL Co-promoter (with Prof. Raskin) and WP coordinator of the EU network of excellence « Nanosil: Silicon-based nano-devices », in collaboration with more than 20 EU institutions.
• 2009-2011: Promoter de la convention IISN 4.4.507.08 - Etude de la résistance aux radiations de structures semiconductrices fondamentales en vue de leur intégration dans les futurs détecteurs à pixels.
• 2010-2013: UCL Co-promoter (with Prof. Raskin and Francis) of the EU network of excellence NANOFUNCTION, “Beyond CMOS Nanodevices for Adding Functionalities to CMOS” (FP7), in collaboration with more than 12 EU institutions.
• 2010 - 2012: Participant in Walloon project « RPI » (Electronics systems and radiation detectors for protontherapy) of the “Pôle de compétitivité” Mecatech, in collaboration with IBA, Nomics and ULg.
• 2010 - 2012: Coordinator of the MNT- ERA project « DNASIP » (DNA hybridization detection system-in-a-package) in collaboration avec Coris Bioconcept, ULg, IMT-Bucharest and Genetic Lab (Romania).
• 2010 – 2014: Co-promoter (with Prof. Raskin) of the FNRS – FRFC project “Towards highly-efficient 10 nm MOSFETs”.
• 2010: “Crédit aux chercheurs” FNRS, “Equipment for measuring the carrier lifetime in detectors of luminous and ionising radiations”.
• 2010 - 2013: Participant in Walloon project « S@T » (Integrated systems and components and MEMS hardened to radiations) in collaboration with Thales-ETCA, CISSOID, CETIC… in the “Pôle de compétitivité” SKYWIN.
• 2011 - 2012: Participant in EU project « Guardian Angels for a smarter life » (Flagship Pilot Project, FP7) in collaboration with EPFL, ETHZ, IBM, Intel, STM, Sanofi…
• 2011 – 2014: Promoter of the EU project « SOI-HITS » with Microsemi and CCMOSS (UK), Honeywell (Romania), CISSOID (BE) and the universities of Cambridge, Warwick and Barcelona.
• 2011-2012: Promoter of a research collaboration with Dow Corning (Seneffe, Belgium) in the field of photovoltaic cells
• 2012-2014: Co-promoter of FNRS-IISN convention 4.4504.12 - R&D on new particle detection techniques
• 2012-2015 : Promoter of a First Spin-off Walloon Region Grant, named « AESPIS » for studying the creation of a spin-off in the field of “ Systèmes de mesure miniaturisés autonomes incluant des circuits de récupération d’énergie et d’interfaçage de capteurs pour applications à ultra basse consommation énergétique ”.
• 2012-2016 : UCL Promoter of Walloon project « StarFlo » ( « A next generation medical implant for Glaucoma patients that combines the latest advances in biomaterials and micro-electromechanical systems (MEMS) sensors » ) in collaboration with iStar, Rosselini Benelux and CHU-ULg in the “Pôle de compétitivité” BIOWIN.
• 2013-2016 : UCL Promoter of Walloon project « CZTS » (CZTS solar cells) in collaboration with AGC, AC&CS, LASEA, UMons and U. Namur in the “Pôle de compétitivité” MECATECH.
• 2013-2017 : UCL co-promoter of the European project “MSP” (Multi-sensor platform) in collaboration with Samsung, AMS, Siemens, IMEC-NL, VITO, universities of Cambridge, Warwick…
• 2014-2017 : Promoter of a First Spin-off Walloon Region Grant, named « Prosense » for studying the creation of a spin-off in the field of “ Détecteurs transparents pour la caractérisation de faisceaux de protons ”
• 2014-2015 : UCL promoter of Walloon project “SHC” (Smart Humidity Controller) in collaboration with University of Mons, SIRRIS, Van Geel, … in the “Pôle de compétitivité” GREENWIN
• 2016-2017: UCL Promoter of H2020 “SaSha” project in collaboration with University of Warwick (UK), Tyndall institute (Eire) and Camutronics (UK) on a “High-voltage rad-hard Si/SiC LDMOS for space applications”
• 2017-2019 : UCL Promoter of H2020 “ARCIGS-M” project in collaboration with University of Uppsala, Solibro (Sweden), IMEC, CRM (Belgium), Arcelor-Mittal (France), etc… on a “ Advances Architectures for ultra-thin high-efficiency CIGS solar cells with high Manufacturability ”
Lefebvre, Martin ; Flandre, Denis ; Bol, David. A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI. In: IEEE Journal of Solid-State Circuits, , p. 1-13 (2023). doi:10.1109/jssc.2023.3240209 (Accepté/Sous presse).
Xu, Pengcheng ; Flandre, Denis ; Bol, David. Analysis and Design of RF Energy-Harvesting Systems with Impedance-Aware Rectifier Sizing. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, Vol. 70, no. 2, p. 367-365 (2023). doi:10.1109/TCSII.2022.3171470 (Accepté/Sous presse).
Kaziz, Sinda ; Hadj Said, Mohamed ; Imburgia, Antonino ; Maamer, Bilel ; Flandre, Denis ; Romano, Pietro ; Tounsi, Fares. Radiometric Partial Discharge Detection: A Review. In: energies, Vol. 16, no.4, p. 1978 (2023). doi:10.3390/en16041978.
Roisin, Nicolas ; Colla, Marie-Stéphane ; Raskin, Jean-Pierre ; Flandre, Denis. Raman Strain-Shift Measurements and Prediction from First-Principles in Highly-Strained Silicon. In: Journal of Materials Science: Materials in Electronics, Vol. 34, p. 373 (2023). doi:10.1007/s10854-022-09769-3.
Van Brandt, Léopold ; Saeidi, Roghayeh ; Bol, David ; Flandre, Denis. Accurate and Insightful Closed-Form Prediction of Subthreshold SRAM Hold Failure Rate. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, Vol. 69, no.7, p. 2767-2780 (2022). doi:10.1109/TCSI.2022.3164680.
Puyol Troisi, Rafael ; Pétré, Sylvain ; Danlée, Yann ; Walewyns, Thomas ; Francis, Laurent ; Flandre, Denis. An Ultra-Low-Power Read-Out Circuit for Interfacing Novel Gas Sensors Matrices. In: IEEE Sensors Journal, Vol. 22, no.10, p. 9521-9533 (2022). doi:10.1109/JSEN.2022.3165755.
Amor, Sedki ; Kilchytska, Valeriya ; Tounsi, Fares ; André, Nicolas ; Machhout, M. ; Francis, Laurent ; Flandre, Denis. Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing. In: Solid-State Electronics, Vol. Journal pre proof, p. 20 (2022). doi:10.1016/j.sse.2022.108300 (Accepté/Sous presse).
Yan, Yiyi ; Kilchytska, Valeriya ; Bin, Wang ; Faniel, Sébastien ; Zeng, Yun ; Raskin, Jean-Pierre ; Flandre, Denis. Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors. In: Microelectronic Engineering, Vol. 254, no.111708, p. 7 (2022). doi:10.1016/j.mee.2022.111708.
Schramme, Maxime ; Van Brandt, Léopold ; Flandre, Denis ; Bol, David. Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, Vol. 69, no. 5, p. 1883-1895 (2022). doi:10.1109/TCSI.2022.3144527.
D. Martinez-Perez, Antonio ; Aznar, Francisco ; Flandre, Denis ; Celma, Santiago. Design-Window Methodology for Inductorless Noise-Cancelling CMOS LNAs. In: I E E E Access, Vol. 10, p. 29482-29492 (2022). doi:10.1109/ACCESS.2022.3158356.
He, Penghui ; Ding, Chunchun ; Li, Guoli ; Hu, Wei ; Ma, Chao ; Flandre, Denis ; Iñíguez, Benjamín ; Liao, Lei ; Lan, Lingfeng ; Liu, Xingqiang. Enhanced Stability and Mobility of Solution-Processed Oxide Thin-Film Transistors with Bilayer Terbium-incorporated Indium Oxide Channel. In: Applied Physics Letters, Vol. 121, no.19, p. 21 (2022).
Vanbrabant, Martin ; Raskin, Jean-Pierre ; Flandre, Denis ; Kilchytska, Valeriya. Experimental study of thermal coupling effects in FD-SOI MOSFET. In: Solid-State Electronics, Vol. 194, no.108362, p. 4 (2022). doi:10.1016/j.sse.2022.108362.
Zeng, Xi ; Lontchi Jioleo, Jackson ; Zhukova, Maria ; Bolt, Pieter ; Smor, Marcel ; Fourdrinier, Lionel ; Li, Guoli ; Flandre, Denis. High-performance dual-mode ultra-thin broadband CdS/CIGS heterojunction photodetector on steel. In: Optics Express, Vol. 30, no.8, p. 13875-13889 (2022). doi:10.1364/OE.456352.
Yan, Yiyi ; Kilchytska, Valeriya ; Flandre, Denis ; Raskin, Jean-Pierre. Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method. In: Solid-State Electronics, Vol. 194, p. 4 (2022). doi:10.1016/j.sse.2022.108347.
Roisin, Nicolas ; Delhaye, Thibault ; André, Nicolas ; Raskin, Jean-Pierre ; Flandre, Denis. Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology. In: Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology, Vol. 339, no.113491, p. 1-11 (2022). doi:10.1016/j.sna.2022.113491.
Kaziz, Sinda ; Romano, Pietro ; Imburgia, Antonino ; Ala, Guido ; Sghaier, Halim ; Flandre, Denis ; Tounsi, Fares. PCB-Based Planar Inductive Loops for Partial Discharges Detection in Power Cables. In: Sensors, Vol. 23, no.1, p. 290 (2022). doi:10.3390/s23010290.
Zeng, Xi ; Zhukova, Maria ; Faniel, Sébastien ; Li, Guoli ; Flandre, Denis. Room-temperature DC-sputtered p-type CuO accumulation-mode thin-film transistors gated by HfO2. In: Applied Physics Letters, , p. 11 (2022). doi:10.1063/5.0098757 (Accepté/Sous presse).
Oliveira, Kevin ; P. Teixeira, Jennifer ; Chen, Wei-Chao ; Lontchi Jioleo, Jackson ; J. N. Oliveira, António ; Çaha, Ihsan ; Deepak Francis, Leonard ; Flandre, Denis ; Edoff, Marika ; A. Fernandes, Paulo ; M. P. Salomé, Pedro . SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness. In: IEEE JOURNAL OF PHOTOVOLTAICS, , p. 8 (2022) (Accepté/Sous presse).
Tounsi, Fares ; Hadj Said, Mohamed ; Hauwaert, Margo ; Kaziz, Sinda ; Francis, Laurent ; Raskin, Jean-Pierre ; Flandre, Denis. Variation Range of Different Inductor Topologies with Shields for RF and Inductive Sensing Applications. In: Sensors, Vol. 22, no.9, p. 15 (2022). doi:10.3390/s22093514.
Wang, Bin ; Malik, Mohammad Wasil ; Yan, Yiyi ; Kilchytska, Valeriya ; Zeng, Yun ; Flandre, Denis ; Raskin, Jean-Pierre. A Physical Model of Contact Resistance in Ti-Contacted Graphene-Based Field Effect Transistors. In: IEEE Transactions on Electron Devices, Vol. 68, no.2, p. 892-898 (2021). doi:10.1109/TED.2020.3046166.
Xu, Pengcheng ; Flandre, Denis ; Bol, David. A Self-Gating RF Energy Harvester for Wireless Power Transfer With High-PAPR Incident Waveform. In: IEEE Journal of Solid-State Circuits, Vol. 56, no.6, p. 1816-1826 (2021). doi:10.1109/jssc.2021.3061196.
Saoutieff, Elise ; Polichetti, Tiziana ; Jouanet, Laurent ; Faucon, Adrien ; Vidal, Audrey ; Pereira, Alexandre ; Boisseau, Sébastien ; Ernst, Thomas ; Miglietta, Maria Lucia ; Alfano, Brigida ; Massera, Ettore ; De Vito, Saverio ; Bui, Do Hanh Ngan ; Benech, Philippe ; Vuong, Tan-Phu ; Moldovan, Carmen ; Danlée, Yann ; Walewyns, Thomas ; Pétré, Sylvain ; Flandre, Denis ; Ancans, Armands ; Greitans, Modris ; Ionescu, Adrian M. . A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project. In: Sensors, Vol. 21, no.5, p. 21 (2021). doi:10.3390/s21051802.
Sabri Alirezaei, Iman ; André, Nicolas ; Amor, Sedki ; Gérard, Pierre ; Flandre, Denis. An Ultra-Thin Ultraviolet Enhanced Backside- Illuminated Single-Photon Avalanche Diode with 650nm-Thin Silicon Body Based on SOI Technology. In: IEEE Journal of Selected Topics in Quantum Electronics, , p. 11 (2021). doi:10.1109/JSTQE.2021.3129274.
Scaffidi, Romain ; Buldu, Dilara G. ; Brammertz, Guy ; Kohl, Thierry ; Birant, Gizem ; Meuris, Marc ; Poortmans, Jef ; Flandre, Denis ; Vermang, bart. Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack design. In: Physica Status Solidi A, (2021). doi:10.1002/pssa.202100073.
Lontchi Jioleo, Jackson ; Doghmen, Hajer ; Krumpmann, Arnaud ; Snyders, Rony ; Flandre, Denis. Depletion effects in moderately doped TiO2 layers from C–V characteristics of MIS structures on Si. In: Applied Physics Express, Vol. 14, no.5 (2021). doi:10.35848/1882-0786/abfb61.
Kilchytska, Valeriya ; Makovejev, Sergej ; Esfeh, Babak Kazemi ; Nyssens, Lucas ; Halder, Arka ; Raskin, Jean-Pierre ; Flandre, Denis. Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications. In: I E E E Journal of the Electron Devices Society, Vol. 9, p. 500-510 (2021). doi:10.1109/JEDS.2021.3057798.
M. V. Cunha, José ; Oliveira, Kevin ; Lontchi Jioleo, Jackson ; S. Lopes, Tomás ; A. Curado, Marco ; R. S. Barbosa, João ; Vinhais, Carlos ; Chen, Wei-Chao ; Borme, Jérôme ; Fonseca, Helder ; Gaspar, João ; Flandre, Denis ; Edoff, Marika ; G. Silva, Ana ; P. Teixeira, Jennifer ; A. Fernandes, Paulo ; M. P. Salomé, Pedro. High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells. In: Solar RRL, Vol. 2021, no.2000534, p. 13 (2021). doi:10.1002/solr.202000534.
Zeng, Xi ; Lontchi Jioleo, Jackson ; Zhukova, Maria ; Fourdrinier, Lionel ; Qadir, Israr ; Ren, Yi ; Niemi, Esko ; Li, Guoli ; Flandre, Denis. High-responsivity broadband photodetection of an ultra-thin In2S3/CIGS heterojunction on steel. In: Optics Letters, Vol. 46, no.10, p. 2288-2291 (2021). doi:10.1364/OL.423999.
Morelle, Alban ; Vandermolen, Eric ; Kilchytska, Valeriya ; Raskin, Jean-Pierre ; Flandre, Denis. Improved Split CV Mobility Extraction in 28 nm Fully Depleted Silicon on Insulator Transistors. In: IEEE Electron Device Letters, Vol. 42, no.5, p. 661-664 (2021). doi:10.1109/LED.2021.3065002.
Roisin, Nicolas ; Brunin, Guillaume ; Rignanese, Gian-Marco ; Flandre, Denis ; Raskin, Jean-Pierre. Indirect light absorption model for highly strained silicon infrared sensors. In: Journal of Applied Physics, Vol. 30, no.5, p. 30 (2021). doi:10.1063/5.0057350 (Accepté/Sous presse).
Qaderi, Fatemeh ; Rosca, Teodor ; Burla, Maurizio ; Leuthold, Jürg ; Flandre, Denis. Millimeter- and Terahertz-wave stochastic sensors based on reversible insulator-to-metal transition in vanadium dioxide. In: Research Square, , p. 14 (2021) (Soumis).
Delhaye, Thibault ; André, Nicolas ; Francis, Laurent ; Flandre, Denis. New Universal Figure of Merit for Embedded Si Piezoresistive Pressure Sensors. In: IEEE SENSORS JOURNAL, Vol. 21, no. 1, p. 213-221 (2021). doi:10.1109/JSEN.2020.3013017.
Li, Guoli ; Fan, Zizheng ; André, Nicolas ; Xu, Yongye ; Xia, Ying ; Iniguez, Benjamin ; Liao, Lei ; Flandre, Denis. Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors. In: IEEE Electron Device Letters, Vol. 42, no.1, p. 94-97 (2021). doi:10.1109/LED.2020.3042212.
Chen, Qi ; Li, Guoli ; André, Nicolas ; Liu, Xingqiang ; Xia, Zhen ; Flandre, Denis ; Liao, Lei. Origin of Low-Temperature Negative Transconductance in Multilayer MoS2 Transistors. In: Applied Physics Letters, , p. 10 (2021). doi:10.1063/5.0058545 (Accepté/Sous presse).
M. V. Cunha, José ; Barreiros, M. Alexandra ; Curado, Marco A. ; Lopes, Tomás S. ; Oliveira, Kevin ; Oliveira, António J. N. ; Barbosa, João R. S. ; Vilanova, António ; Brites, Maria João ; Mascarenhas, João ; Flandre, Denis ; Silva, Ana G. ; Fernandes, Paulo A. ; Salomé, Pedro M. P.. Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization. In: Advanced Materials Interfaces, , p. 1-12 (2021). doi:10.1002/admi.202101004.
Bol, David ; Schramme, Maxime ; Moreau, Ludovic ; Xu, Pengcheng ; Dekimpe, Rémi ; Saeidi, Roghayeh ; Haine, Thomas ; Frenkel, Charlotte ; Flandre, Denis. SleepRunner: A 28-nm FDSOI ULP Cortex-M0 MCU With ULL SRAM and UFBR PVT Compensation for 2.6–3.6-μW/DMIPS 40–80-MHz Active Mode and 131-nW/kB Fully Retentive Deep-Sleep Mode. In: IEEE Journal of Solid State Circuits, Vol. 56, no.7, p. 2256-2269 (2021). doi:10.1109/JSSC.2021.3056219.
Schwarz, Mike ; Kloes, Alexander ; Flandre, Denis. Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode. In: Solid-State Electronics, Vol. 184, no.108124, p. 8 (2021). doi:10.1016/j.sse.2021.108124.
GALEMBECK, EGON HENRIQUE SALERNO ; Renaux, Christian ; SWART, JACOBUS WILLIBRORDUS ; Flandre, Denis ; GIMENEZ, SALVADOR PINILLOS. The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures. In: I E E E Journal of the Electron Devices Society, Vol. 9, p. 415-423 (2021). doi:10.1109/JEDS.2021.3071399.
Wei, Peng ; Sabri Alirezaei, Iman ; André, Nicolas ; Zeng, Xi ; Bouterfa, Mohamed ; Wang, Bin ; Zeng, Yun ; Flandre, Denis. The Shift of Breakdown Voltage for Silicon Membrane Strip Detectors Resulting from Surface Avalanche. In: Journal of Applied Physics, Vol. 129, no.21, p. 214501-1/7 (2021). doi:10.1063/5.0049490.
Amor, Sedki ; Kilchytska, Valeriya ; Flandre, Denis ; Galy, Philippe. Trap Recovery by in-Situ Annealing in Fully-Depleted MOSFET With Active Silicide Resistor. In: IEEE Electron Device Letters, Vol. 42, no.7, p. 1085-1088 (2021). doi:10.1109/LED.2021.3079244.
Nyssens, Lucas ; Halder, Arka ; Kazemi Esfeh, Babak ; Planes, Nicolas ; Flandre, Denis ; Kilchytska, Valeriya ; Raskin, Jean-Pierre. 28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K. In: I E E E Journal of the Electron Devices Society, Vol. B, p. 646-654 (2020). doi:10.1109/JEDS.2020.3002201.
Gimeno Gasca, Cecilia ; Flandre, Denis ; Schramme, Maxime ; Frenkel, Charlotte ; Bol, David. A 2.24-pJ/bit 2.5-Gb/s UWB receiver in 28-nm FDSOI CMOS for low-energy chip-to-chip communications. In: A E Ue: International Journal of Electronics and Communication, Vol. 114, no. 152996, p. 8 (2020). doi:10.1016/j.aeue.2019.152996.
Schramme, Maxime ; Gimeno Gasca, Cecilia ; Cathelin, Andreia ; Flandre, Denis ; Bol, David. A 2.5-GHz Clock Recovery Circuit Based on a Back-Bias-Controlled Oscillator in 28-nm FDSOI. In: IEEE Solid-State Circuits Letters, Vol. 3, p. 478-481 (2020). doi:10.1109/LSSC.2020.3026759.
Puyol Troisi, Rafael ; Molle, Yannick ; Pétré, Sylvain ; Walewyns, Thomas ; Francis, Laurent ; Flandre, Denis. A Practical Approach for the Evaluation of Noise in Oscillator-Based Resistive Sensor Interfaces. In: 2020 IEEE SENSORS, , p. 1-4 (2020). doi:10.1109/SENSORS47125.2020.9278889.
Rudenko, Tamara ; Nazarov, Alexei ; Barraud, S. ; Kilchytska, Valeriya ; Flandre, Denis. A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio. In: Solid-State Electronics, Vol. 107723, no.161, p. 26 (2019). doi:10.1016/j.sse.2019.107723.
Stoukatch, Serguei ; André, Nicolas ; Delhaye, Thibault ; Dupont, François ; Redouté, Jean-Michel ; Flandre, Denis. Anisotropic conductive film & flip-chip bonding for low-cost sensor prototyping on rigid & flex PCB. In: IEEE Sensors, Vol. 2020, p. 1-4 (2020). doi:10.1109/SENSORS47125.2020.9278669.
Jiang, Bei ; Huang, Hao ; Chen, Rui ; Flandre, Denis ; Wan, Da ; Chen, Xue ; Xingqiang, Liu ; Cong, Ye ; Lei, Liao. Black phosphorus field effect transistors stable in harsh conditions via surface engineering. In: Applied Physics Letters, Vol. 117, no.111602, p. 111602-1 à 111602-5 (2020). doi:10.1063/5.0021335.
Zhukova, Maria ; Kotipalli, Ratan ; PONCELET, Olivier ; Samain, Louise ; Fourdrinier, Lionel ; Flandre, Denis. Correlation and optimization of the optoelectrical properties of DC magnetron-sputtered Cu2ZnSnS4 absorber layer as a function of the material composition. In: Materials Science in Semiconductor Processing, Vol. 121, no.105307, p. 1-11 (2021). doi:10.1016/j.mssp.2020.105367.
Pampin, Rémi ; Raskin, Jean-Pierre ; Huynen, Isabelle ; Flandre, Denis. Electrodes-oxide-semiconductor device for biosensing: Renewed conformal analysis and multilayer algorithm. In: Journal of Electroanalytical Chemistry, Vol. 856, p. 113651 (2020). doi:10.1016/j.jelechem.2019.113651.
Sabri Alirezaei, Iman ; André, Nicolas ; Flandre, Denis. Enhanced Ultraviolet Avalanche Photodiode With 640-nm-Thin Silicon Body Based on SOI Technology. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, (2020). doi:10.1109/TED.2020.3017699 (Accepté/Sous presse).
Galy, Philippe ; Soto, F. ; Bourgeat, J. ; Jacquier, B. ; Kilchytska, Valeriya ; Flandre, Denis. Experimental results on diodes and BIMOS ESD devices in 28 nm FD-SOI under TLP & TID radiation. In: Microelectronics Reliability, Vol. 114, p. 113938 (2020). doi:10.1016/j.microrel.2020.113938.
Wan, Da ; Hao, Huang ; CHEN, Chen ; Abliz, Ablat ; Ye, Cong ; Liu, Xingqiang ; Zou, Xuming ; Li, Guoli ; Flandre, Denis ; Liao, Lei. High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping. In: IEEE Electron Device Letters, Vol. 41, no.6, p. 944-947 (2020). doi:10.1109/LED.2020.2988488.
Kamel, Dina ; Standaert, François-Xavier ; Duc, Alexandre ; Flandre, Denis ; Berti, Francesco. Learning with Physical Noise or Errors. In: IEEE Transactions on Dependable and Secure Computing, Vol. 17, no. 5, p. 957-971 (2020). doi:10.1109/TDSC.2018.2830763.
Lontchi Jioleo, Jackson ; Zhukova, Maria ; Kovacic, Milan ; Krc, Janez ; Chen, Wei-Chao ; Edoff, Marika ; Bose, Sourav ; Salomé, Pedro M.P. ; Goffard, julie ; Cattoni, Andrea ; Gouillart, L. ; Collin, Stéphane ; Gusak, Victoria ; Flandre, Denis. Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations. In: I E E E Journal of Photovoltaics, Vol. 10, no. 6, p. 1908-1917 (2020). doi:10.1109/JPHOTOV.2020.3012631.
Tounsi, Fares ; Flandre, Denis ; Rufer, Libor ; Francis, Laurent. Performances Evaluation of On-chip Large-Size Tapped Transformer for MEMS applications. In: IEEE Transactions on Instrumentation and Measurement, Vol. 69, no. 9, p. 7051-7060 (2020). doi:10.1109/TIM.2020.2974409.
Nyssens, Lucas ; Halder, Arka ; Esfeh, Babak Kazemi ; Planes, Nicolas ; Haond, Michel ; Flandre, Denis ; Raskin, Jean-Pierre ; Kilchytska, Valeriya. Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and Its Effect on Analog Figures of Merit. In: I E E E Journal of the Electron Devices Society, Vol. 8, p. 789-796 (2020). doi:10.1109/JEDS.2020.2999632.
Zeng, Xi ; Zhukova, Maria ; Faniel, Sébastien ; Proost, Joris ; Flandre, Denis. Structural and Opto‑electronic characterization of CuO thin films prepared by DC reactive magnetron sputtering. In: Journal of Materials Science: Materials in Electronics, Vol. 31, p. 4563-4573 (2020). doi:10.1007/s10854-020-03007-4.
Alcalde Bessia, Fabricio ; Flandre, Denis ; André, Nicolas ; Irazoqui, Julieta ; Pérez, Martín ; Gómez Berisso, Mariano ; Lipovetzky, Jose. Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application. In: Transactions on Nuclear Science, Vol. 67, no. 10, p. 2217-2223 (2019). doi:10.1109/TNS.2019.2945040.
Kazemi Esfeh, Babak ; Planes N. ; Haond M. ; Raskin, Jean-Pierre ; Flandre, Denis ; Kilchytska, Valeriya. 28 nm FDSOI analog and RF figures of merit at N2 cryogenic temperatures. In: Solid-State Electronics, Vol. 159, no.September 2019, p. 77-82 (2019). doi:10.1016/j.sse.2019.03.039.
Kazemi Esfeh, Babak ; Kilchytska, Valeriya ; Planes,N. ; Haond, M. ; Flandre, Denis ; Raskin, Jean-Pierre. 28 nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements extraction at Cryogenic Temperature down to 77 K. In: I E E E Journal of the Electron Devices Society, Vol. 7, p. 810816 (2019). doi:10.1109/JEDS.2019.2906724.
Dekimpe, Rémi ; Xu, Pengcheng ; Schramme, Maxime ; Gérard, Pierre ; Flandre, Denis ; Bol, David. A Battery-less BLE Smart Sensor for Room Occupancy Tracking Supplied by 2.45-GHz Wireless Power Transfer. In: Integration, Vol. 67, p. 8-18 (2019). doi:10.1016/j.vlsi.2019.03.006.
Nawaz, Kashif ; Van Brandt, Léopold ; Levi, Itamar ; Standaert, François-Xavier ; Flandre, Denis. A security oriented transient-noise simulation methodology: Evaluation of intrinsic physical noise of cryptographic designs. In: Integration, Vol. 2019, no.68, p. 71-79 (2019). doi:10.1016/j.vlsi.2019.06.006.
Xu, Pengcheng ; Flandre, Denis ; Bol, David. Analysis, Modeling, and Design of a 2.45-GHz RF Energy Harvester for SWIPT IoT Smart Sensors. In: IEEE Journal of Solid State Circuits, no. 99, p. 2717-2729 (2019). doi:10.1109/JSSC.2019.2914581.
He, Jiawei ; Li, Guoli ; Lv, Yawei ; Wang, Chunlan ; Liu, Chuansheng ; Li, Jinchai ; Flandre, Denis ; Chen, Huipeng ; Guo, Tailiang ; Liao, Lei. Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor. In: Advanced Electronic Materials, Vol. 5, no.4, p. 1900125 (1-7) (2019). doi:10.1002/aelm.201900125.
Caicedo, Nohora ; Leturcq, Renaud ; Raskin, Jean-Pierre ; Flandre, Denis ; Lenoble, Damien. Detection mechanism in highly sensitive ZnO nanowires network gas sensors. In: Materials science, Vol. preprint, p. 27 (2019).
Salerno Galembeck, Egon Henrique ; Flandre, Denis ; Renaux, Christian ; Pinillos Gimenez, Salvador . Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment. In: Journal of Integrated Circuits and Systems, Vol. 14, no.2, p. 8 (2019). doi:10.29292/jics.v14i2.34.
Li, Guoli ; André, Nicolas ; Huet, Benjamin ; Delhaye, Thibault ; Reckinger, Nicolas ; Francis, Laurent ; Lioa, Lei ; Raskin, Jean-Pierre ; Zeng, Yun ; Flandre, Denis. Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Sibased photodiode. In: Journal of Physics D: Applied Physics, Vol. 52, no. 24, p. 7 (2019). doi:10.1088/1361-6463/ab12b8. doi:10.1088/1361-6463/ab12b8.
Xia, Ying ; Li, Guoli ; Jiang, Bei ; Yang, Zhenyu ; Liu, Xingqiang ; Xiao, Xiangheng ; Flandre, Denis ; Wang, Chunlan ; Liu, Yuan ; Liao, Lei. Exploring and Suppressing Kink Effect of Black Phosphorus FieldEffect Transistors Operating in Saturation Regime. In: Nanoscale, Vol. 2019, p. 9 (2019). doi:10.1039/C9NR02907A.
Wang, Huiri ; He, Jiawei ; Xu, Yongye ; André, Nicolas ; Zeng, Yun ; Flandre, Denis ; Liao, Lei ; Li, Guoli. Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors. In: Physical Chemistry Chemical Physics, Vol. 2020, no.22, p. 1591-1597 (2019). doi:10.1039/C9CP05050G.
Kovacic, M. ; Krc, J. ; Lipovsek, B. ; Chen, W.-C. ; Edoff, M. ; Bolt, P.J. ; van Deelen, J. ; Zhukova, Maria ; Lontchi Jioleo, Jackson ; Flandre, Denis ; Salomé, P. ; Topic, M.. Light management design in ultra-thin chalcopyrite photovoltaic devices by employing optical modelling. In: Solar Energy Materials & Solar Cells, Vol. 200, no.109933, p. 9 (2019). doi:10.1016/j.solmat.2019.109933.
Li, Guoli ; André, Nicolas ; Qi Chen ; Huiru, Wang ; Francis, Laurent ; Zeng, Yun ; Liao, Lei ; Flandre, Denis. Low-Power, High-Sensitivity Temperature Sensor Based on Ultrathin SOI Lateral p-i-n Gated Diode. In: IEEE Transactions on Electron Devices, Vol. 66, no. 9, p. 4001-4007 (2019). doi:10.1109/TED.2019.2930244.
Kovačič, M. ; Krč, J. ; Lipovšek, B. ; Chen, W-C. ; Edoff, M. ; Bolt, P.J. ; van Deelen, J. ; Zhukova, Maria ; Lontchi Jioleo, Jackson ; Flandre, Denis ; Salomé, P. ; Topič, M.. Modelling Supported Design of Light Management Structures in Ultra-Thin Cigs Photovoltaic Devices. In: Informacije MIDEM : journal of microelectronics, electric components and materials, Vol. 49, no.3, p. 183-190 (2019). doi:10.33180/InfMIDEM2019.307.
Salerno Galembeck, Egon Henrique ; Flandre, Denis ; Renaux, Christian ; Pinillos Gimenez, Salvador. Performance of OCTO Layout Style on SOI MOSFET Switches under High-temperature Operation. In: Journal of Integrated Circuits and Systems, Vol. 14, no.2, p. 8 (2019). doi:10.29292/jics.v14i2.34.
Martins d’Oliveira, Ligia ; Kilchytska, Valeriya ; Flandre, Denis ; de Souza, Michelly. Self-Cascode Current-Voltage Curve-Construction Algorithm from Single MOSFET Measurements for Analog Figures-of-Merit Extraction. In: Journal of Integrated Circuits and Systems, Vol. 14, no.1, p. 6 (2019). doi:10.29292/jics.v14i1.69.
André, Nicolas ; Rack, Martin ; Nyssens, Lucas ; Oueslati, Donia ; Ben Ali, Khaled ; Gilet, S ; Craeye, Christophe ; Raskin, Jean-Pierre ; Flandre, Denis. Ultra Low-Loss Si Substrate for On-Chip UWB GHz Antennas. In: I E E E Journal of the Electron Devices Society, Vol. 7, p. 393397 (2019). doi:10.1109/JEDS.2019.2902636.
Gimeno Gasca, Cecilia ; Flandre, Denis ; Bol, David. Analysis and Specification of an IR-UWB Transceiver for High-Speed Chip-to-Chip Communication in a Server Chassis. In: IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 65, no.6, p. 2015-2023 (2018). doi:10.1109/TCSI.2017.2765312.
Alves, Camila Restani ; Flandre, Denis ; de Souza, Michelly. Analysis of Mismatching on the Analog Characteristics of GC SOI MOSFETs. In: Journal of Integrated Circuits and Systems, Vol. 13, no.3, p. 1-8 (2018). doi:10.29292/jics.v13i3.16.
Gammon, P.M. ; Chan, C.W. ; Li, F. ; Gity, F. ; Trajkovic, T. ; Pathirana, V. ; Flandre, Denis ; Kilchytska, Valeriya. Development, characterisation and simulation of wafer bonded Si-on-SiC substrates. In: Materials Science in Semiconductor Processing, Vol. 78, p. 69-74 (2018). doi:10.1016/j.mssp.2017.10.020.
Assalti, Rafael ; Flandre, Denis ; de Souza, Michelly. Influence of Geometrical Parameters on the DC Analog Behavior of the Asymmetric Self-Cascode FD SOI nMOSFETs. In: Journal of Integrated Circuits and Systems, Vol. 13, no.2, p. 1-7 (2018). doi:10.29292/jics.v13i2.15.
Haddad, Pierre-Antoine ; Flandre, Denis ; Raskin, Jean-Pierre. Intrinsic rectification in common-gated graphene field-effect transistors. In: Nano Energy, Vol. 43, p. 37-46. doi:10.1016/j.nanoen.2017.10.049.
Kamel, Dina ; Standaert, François-Xavier ; Duc, Alexandre ; Flandre, Denis ; Berti, Francesco. Learning with Physical Noise or Errors. In: IEEE Transaction on Dependable and Secure Computing, , p. 14 (2018).
Gimeno Gasca, Cecilia ; Bol, David ; Flandre, Denis. Multilevel Half-Rate Detector for Clock and Data Recovery Circuits. In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, , p. 5 (2018). doi:10.1109/TVLSI.2018.2826440.
Garud, Siddharta ; Gampa, Nikhil ; Allen, Thomas G. ; Kotipalli, Ratan ; Flandre, Denis ; Batuk, Maria ; Hadermann, Joke ; Meuris, Marc ; Poortmans, Jef ; Smets, Arno ; Vermang, Bart. Surface Passivation of CIGS Solar Cells Using Gallium Oxide. In: physica status solidi (a), Vol. 215, no.1700826, p. 6 (2018). doi:10.1002/pssa.201700826.
Li, Guoli ; Abliz, Ablat ; Xu, Lei ; André, Nicolas ; Liu, Xingqiang ; Zeng, Yun ; Flandre, Denis ; Liao, Lei. Understanding hydrogen and nitrogen doping on active defects in amorphous In-Gas-Zn-O thin-film transistors. In: Applied Physics Letters, Vol. 112, no.253504, p. 5 (2018). doi:10.1063/1.5032169.
Müller, Achim ; Vu, Xuan T. ; Pachauri, Vivek ; Francis, Laurent ; Flandre, Denis ; Ingebrandt, Sven. Wafer-Scale Nanoimprint Lithography Process Towards Complementary Silicon Nanowire Field-Effect Transistors for Biosensor Applications. In: Physica Status Solidi. A: Applied Research, Vol. 1800234, p. 10 (2018). doi:10.1002/pssa.201800234.
Francis, Laurent ; Roisin, Nicolas ; Colla, Marie-Stéphane ; Flandre, Denis ; Raskin, Jean-Pierre. Improving the determination of strain in the deformed Silicon measured by Raman spectroscopy. International Meeting on Optical Measurement Techniques and Industrial Applications (Delft (Netherlands), du 28/03/2023 au 30/03/2023). In: International Meeting on Optical Measurement Techniques and Industrial Applications, 2023.
Bidoul, Noémie ; Huet, Benjamin ; Ureña Begara, Ferran ; Raskin, Jean-Pierre ; Flandre, Denis. Tuning the stochasticity of VO2 neurons firing-threshold through grain size engineering. NeuMatDeCaS 2023 (Valencia, Spain, du 23/01/2023 au 25/01/2023). In: Proceedings of Neuromorphic Materials, Devices, Circuits and Systems, 2023, p. 050. doi:10.29363/nanoge.neumatdecas.2023.050.
Lefebvre, Martin ; Flandre, Denis ; Bol, David. A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI. ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) (Milan (Italy), du 19/09/2022 au 22/09/2022). In: Proceedings of the ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), p. 469-472. doi:10.1109/ESSCIRC55480.2022.9911369.
Bidoul, Noémie ; Huet, Benjamin ; Ureña-Begara, Ferran ; Raskin, Jean-Pierre ; Flandre, Denis. Control of sputtered VO2 thin film grain size through O2 concentration. Micro and Nano Engineering conference (MNE) EUROSENSORS 2022 (Leuven, Belgium, du 19/09/2022 au 23/09/2022).
Vanbrabant, Martin ; Raskin, Jean-Pierre ; Flandre, Denis ; Kilchytska, Valeriya. Experimental study of thermal coupling effects in FD-SOI MOSFET. The 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon - EuroSOI-ULIS'2022 (Udine, Italy, du 18/05/2022 au 20/05/2022). In: The 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon - EuroSOI-ULIS'2022, 2022.
Yan, Yiyi ; Reckinger, Nicolas ; Kilchytska, Valeriya ; Flandre, Denis ; Tang, Xiaohui ; Malik, Mohammad Wasil ; Hackens, Benoît ; Raskin, Jean-Pierre. Hexagonal Boron Nitride Memristor based on a nanogap self-formed by silicidation. Mini Colloquia (MQ) on "Memristive Devices", The 6th Symposium on Schottky Barrier MOS Devices (SSBMOS) (Giessen, Germany, du 7/09/2022 au 8/09/2022).
Yan, Yiyi ; Kilchytska, Valeriya ; Faniel, Sébastien ; Flandre, Denis ; Raskin, Jean-Pierre. Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks. The 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon - EuroSOI-ULIS'2022 (Udine, Italy, du 18/05/2022 au 20/05/2022). In: The 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon - EuroSOI-ULIS'2022, 2022.
Imburgia, Antonino ; Kaziz, Sinda ; Romano, Pietro ; Flandre, Denis ; Artale, Giovanni ; Rizzo, v ; Viola, Fabio ; Tounsi, Fares ; Ala, Guido. Investigation of PCB-based Inductive Sensors Orientation for Corona Partial Discharge Detection. 2022 IEEE 21st Mediterranean Electrotechnical Conference (MELECON 2022) (Palermo (Italy), du 14/06/2022 au 16/06/2022), p. 559-563. In: proceedings of the 2022 IEEE 21st Mediterranean Electrotechnical Conference, I E E E, 2022. 978-1-6654-4280-0/22, 559-563. doi:10.1109/MELECON53508.2022.9843026.
Roisin, Nicolas. Optical performances prediction of highly strained silicon photodetector. 7th edition of the silicon photonics Summer School (C2N Paris-Saclay, France, du 20/06/2022 au 24/06/2022).
Kaziz, Sinda ; Imburgia, Antonino ; Flandre, Denis ; Rizzo, Giuseppe ; Romano, Pietro ; Viola, Fabio ; Ala, Guido ; Tounsi, Fares. Performances of a PCB-based Loop Antenna Inductive Sensor for Partial Discharges Detection. IEEE 2022 International Conference on Dielectrics (ICD 2022) (Palermo (Italy), du 03/07/2022 au 07/07/2022), p. 9-12. In: Proceedings of the 2022 IEEE 4th International Conference on Dielectrics (ICD 2022), I E E E, 2022. 978-1-6654-1833-1/22, 9-12. doi:10.1109/ICD53806.2022.9863503.
Roisin, Nicolas ; Colla, Marie-Stéphane ; Flandre, Denis ; Raskin, Jean-Pierre. Raman Shift Prediction from First Principles in Highly-Strained Silicon. ICOOPMA 2022 (Gent, du 04/07/2022 au 08/07/2022).
Roth, Florian ; Bidoul, Noémie ; Rosca, Teodor ; D¨orpinghaus, Meik ; Flandre, Denis ; Ionescu, Adrian M. ; Fettweis, Gerhard. Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes. 2022 2nd IEEE International Symposium on Joint Communications & Sensing (JC&S) (Seefeld (Austria), du 09/03/2022 au 10/03/2022).
Kilchytska, Valeriya ; Makovejev, Sergei ; Esfeh, Babak Kazemi ; Nyssens, Lucas ; Halder, Arka ; Raskin, Jean-Pierre ; Flandre, Denis. Advanced MOSFETs Electrical Characterization for Further Analog and RF applications. SBMicro (virtual conference, 28/08/2021).
Delhaye, Thibault ; Le Brun, Grégoire ; Flandre, Denis ; Raskin, Jean-Pierre. Bottom-Up Life-Cycle Assessment of MEMS Piezoresistive Pressure Sensors. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (Virtual event, du 25/08/2021 au 27/08/2021).
Delhaye, Thibault P. ; Le Brun, Grégoire ; Flandre, Denis ; Raskin, Jean-Pierre. Bottom-Up Life-Cycle Assessment of MEMS Piezoresistive Pressure Sensors. 2021 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP) (Paris, France, du 25/8/2021 au 27/8/2021). In: Proceedings, IEEE, 2021. 978-1-6654-0230-9, p. 1-6. doi:10.1109/dtip54218.2021.9568683.
Li, Guoli ; He, Jiawei ; Flandre, Denis ; Liao, Lei. Defect Engineering in n‐Type Oxide Semiconductor TFTs. International Conference on Display Technology 2021 (ICDT 2021) (Beijing (China), du 30/05/2021 au 02/06/2021).
Yan, Yiyi ; Flandre, Denis ; Kilchytska, Valeriya ; Faniel, Sébastien ; Tang, Xiaohui ; Raskin, Jean-Pierre. Determination of Carrier Lifetime in Silicon Using an Ultra-thin Al2O3/SiO2 Dielectric Stack. 2021 IEEE Latin America Electron Devices Conference (LAEDC) (Virtual conference, du 19/04/2021 au 21/04/2021). In: Proceedings of the 2021 IEEE Latin America Electron Devices Conference (LAEDC), 2021.
Masarweh, Eléonore ; André, Nicolas ; Delhaye, Thibault ; Francis, Laurent ; Flandre, Denis. Enhancing Partial Discharge Detection by Tuning Residual Stresses in Ultrathin CMOS-compatible Multilayer Membranes for Resonant Frequency Control. Micro and Nano Engineering Conference (Torino (Italy), du 20/09/2021 au 23/09/2021).
Delhaye, Thibault ; Roisin, Nicolas ; André, Nicolas ; Francis, Laurent ; Flandre, Denis. Improving MOSFET Piezoresistive Strain Gauges Limit of Detection Using Lock-In Principle. IEEE Sensors 2021 (virtual conference, du 31/10/2021 au 04/11/2021). In: Proceedings of the IEEE Sensors 2021, 2021.
Amor, Sedki ; Kilchytska, Valeriya ; Tounsi, Fares ; André, Nicolas ; Francis, Laurent ; Flandre, Denis. In-situ recovery of on-membrane PD-SOI MOSFET from TID defects after gamma irradiation. 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) (Caen, France, du 01/09/2021 au 03/09/2021). In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021. 978-1-6654-3745-5. doi:10.1109/EuroSOI-ULIS53016.2021.9560673.
Zeng, Xi ; Zhukova, Maria ; Faniel, Sébastien ; Proost, Joris ; Flandre, Denis. Material, optical and electrical characterization of DC sputtered CuO by tuning oxygen concentration. EMRS-Spring meeting 2021 (Virtual meeting, du 31/05/2021 au 04/06/2021). In: Proceedings of the EMRS-Spring meeting 2021, 2021.
Oliveira, Kevin ; Chen, Wei-Chao ; Lontchi Jioleo, Jackson ; Oliveira, António J. N. ; Teixeira, Jennifer P. ; Flandre, Denis ; Edoff, Marika ; Fernandes, Paulo A. ; Salomé, Pedro M. P.. SiOx patterned based substrates implemented in Cu(In,Ga)Se2 ultrathin solar cells: optimum thickness. 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC 2021) (virtual conference, du 20/06/2021 au 25/06/2021).
Stoukatch, Serguei ; André, Nicolas ; Dupont, François ; Redouté, Jean-Michel ; Flandre, Denis. Ultra-Thinned Individual SOI Die ACF FC Bonded on Rigid and Flex PCB. 2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC) (Online, du 13/09/2021 au 16/09/2021). In: Proceedings, IEEE, 2021. 978-0-9568086-7-7, p. 1-5. doi:10.23919/EMPC53418.2021.9584947.
Flandre, Denis ; Schramme, Maxime ; Gimeno Gasca, Cecilia ; Drouguet, Maxime ; André, Nicolas ; Craeye, Christophe ; Bol, David. Cinq générations de chips UWB (Ultra-Wide-Band) pour la géo-localisation et la transmission de données à très basse consommation. FETCH 2020 - École d'hiver Francophone sur les Technologies de Conception des Systèmes Embarqués Hétérogènes (Montréal (Canada), du 12/02/2020 au 14/02/2020) (Accepté/Sous presse).
Li, Guoli ; He, Jiawei ; Flandre, Denis ; Liao, lei. Defect Engineering in n-Type Oxide Semiconductor TFTs. International Conference on Display Technology 2020 (Wuhan (China), du 29/03/2020 au 01/04/2020).
Puyol Troisi, Rafael ; Pétré, Sylvain ; Danlée, Yann ; Walewyns, Thomas ; Francis, Laurent ; Flandre, Denis. Design Considerations of Ultra-Low-Power Polymer Gas Microsensors Based on Noise Analysis. 4th International Conference nanoFIS 2020—Functional Integrated nano Systems (Graz (Austria), du 02/11/2020 au 04/11/2020). In: Proceedings of the 4th International Conference nanoFIS 2020—Functional Integrated nano Systems, 2020.
Kilchytska, Valeriya ; Makovejev, Sergej ; Kazemi Esfeh , Babak ; Nyssens, Lucas ; Halder, Arka ; Raskin, Jean-Pierre ; Flandre, Denis. Electrical characterization of advanced MOSFETs towards analog and RF applications. 2020 IEEE Latin America Electron Devices Conference (LAEDC) (San José (Costa Rica), du 25/02/2020 au 28/02/2020). In: Proceedings of the 2020 IEEE Latin America Electron Devices Conference (LAEDC), IEEE, 2020. 978-1-7281-1044-8/20, 4. doi:10.1109/LAEDC49063.2020.9073536.
Amor, Sedki ; Van Brandt, Léopold ; Kilchytska, Valeriya ; Machhout, Mohsen ; Francis, Laurent ; Flandre, Denis. LOW-FREQUENCY NOISE ANALYSIS OF ON-MEMBRANE MOSFET AND IN-SITU THERMAL ANNEALING. 2020 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (Virtual event, du 15/06/2020 au 26/06/2020) (Accepté/Sous presse).
Wei, Peng ; André, Nicolas ; Zeng, Xi ; Sabri Alirezaei, Iman ; Li, Guoli ; Bouterfa, Mohamed ; Francis, Laurent ; Flandre, Denis. Micrometer-thin SOI Sensors for E-Skin Applications. 2020 IEEE SENSORS (Rotterdam (the Netherlands), du 25/10/2020 au 28/10/2020). In: IEEE Sensors. Proceedings. doi:10.1109/SENSORS47125.2020.9278716.
Schwarz, Mike ; Koes, Alexander ; Flandre, Denis. Schottky-Barrier FET Ultra-Low-Power Diode. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (Virtual conference, du 1/09/2020 au 30/09/2020). In: Proceedings, IEEE, 2020. 978-1-7281-8765-5, p. 1-4. doi:10.1109/EUROSOI-ULIS49407.2020.9365540.
Kaziz, Sinda ; Maamer, Bilal ; Delhaye, Thibault ; Tounsi, Fares ; Francis, Laurent ; Flandre, Denis. Tuning Range Comparison Between Different Planar Inductors Layouts on PCB. IEEE International Conference on Design & Test of Integrated micro & nano-Systems (DTS 2020) (Hammamet (Tunisia), du 07/06/2020 au 10/06/2020). In: Proceedings of DTS 2020, IEEE, 2020. 978-1-7281-5429-9/20, p. 6.
Lontchi Jioleo, Jackson ; Zhukova, Maria ; Kovacic, Milan ; Krc, Janez ; Chen, Wei-Chao ; Edoff, Marika ; Bose, Sourav ; Salomé, Pedro ; Goffard, Julie ; Cattoni, Andrea ; Collin, Stéphane ; Flandre, Denis. Ultra-thin CIGS: 2D Modelling and impactful results for optimal cell design and characterizations. 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (Calgary (Canada), du 15/06/2020 au 21/08/2020). In: Proceedings of the 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2020.
Nyssens, Lucas ; Halder, Arka ; Planes, N. ; Flandre, Denis ; Kilchytska, Valeriya ; Raskin, Jean-Pierre. 28 FDSOI RF Figures of Merit down to 4.2 K. IEEE S3S Conference (San Jose (USA), 10/2019).
Anton Köck ; Bol, David ; Flandre, Denis. 3D-Integrated Multi-Sensor Demonstrator System for Environmental Monitoring. IEEE TRANSDUCERS & Eurosensors XXXIII. In: IEEE Solid-State Sensor and Actuator Workshop. Technical Digest, Vol. 2019, no.-, p. 1136-1139 (2019).
Bol, David ; Schramme, Maxime ; Moreau, Ludovic ; Haine, Thomas ; Xu, Pengcheng ; Frenkel, Charlotte ; Dekimpe, Rémi ; Stas, François ; Flandre, Denis. A 40-to-80MHz Sub-4µW/MHz ULV Cortex-M0 MCU SoC in 28nm FDSOI with Dual-Loop Adaptive Back-Bias Generator for 20µs Wake-Up From Deep Fully Retentive Sleep Mode. 2019 IEEE International Solid- State Circuits Conference - (ISSCC) (San Francisco (USA), du 17/02/2019 au 21/02/2019). In: Proceedings of the 2019 IEEE International Solid- State Circuits Conference (ISSCC 2019), IEEE, 2019. 978-1-5386-8531-0/19, 322-323. doi:10.1109/ISSCC.2019.8662293.
Martínez, A. ; Alvarado, J. ; Kilchytska, Valeriya ; Alcántara, S. ; Flandre, Denis. Back-gate bias Effect on the MOSFET-C CMOS UTBB Performance by Circuit Simulations . 5th joint EUROSOI – ULIS 2019 Conference (Grenoble (France), 04/2019).
Flandre, Denis ; André, Nicolas ; Delhaye, Thibault ; Francis, Laurent ; Raskin, Jean-Pierre. Capteurs CMOS physiques & physiologiques flexibles et basse consommation. Ecole d'hiver Francophone sur les Technologies de Conception des Systèmes embarqués Hétérogènes (FETCH 2019) (Louvain-la-Neuve (Belgium), du 28/01/2019 au 30/01/2019).
Flandre, Denis ; Kazemi Esfeh, Babak ; Nyssens, Lucas ; Halder, Arka ; Kilchytska, Valeriya ; Raskin, Jean-Pierre. Figures of merit of nanoscale transistors at cryogenic temperature: 28nm UTBB FD SOI nMOSFET case study. 3rd Symposium on Schottky barrier MOS devices (Gif-sur Yvette (France), 04/10/2019).
Martins d’Oliveira, Ligia ; Kilchytska, Valeriya ; Flandre, Denis ; de Souza, Michelly. Harmonic Distortion in Symmetric and Asymmetric Self-Cascodes of UTBB FD SOI Planar MOSFETs. 2019 34th Symposium on Microelectronics Technology and Devices (SBMICRO) (Sao Paulo (Brazil), du 26/08/2019 au 30/08/2019).
Pétré, Sylvain ; Walewyns, Thomas ; Fomekong, R. Lontio ; Lahem, D. ; Debliquy, M. ; Flandre, Denis ; Francis, Laurent. Live Demonstration: A Highly Selective Temperature and Humidity Compensated MOX Based Multi-Gas Sensor Module with Bluetooth 5.0 Connectivity. 2019 IEEE SENSORS (Montréal (Canada), du 27/10/2019 au 30/10/2019). In: Proceedings of IEEE Sensors 2019, IEEE, 2019.
Van Brandt, Léopold ; Kazemi Esfeh, Babak ; Planes, N. ; Kilchytska, Valeriya ; Flandre, Denis. Low-Frequency Noise Transistor Performance for UTBB FDSOI MOSFET-C Filters. S3S Conference (San José (USA), du 13/10/2019 au 17/10/2019) (Accepté/Sous presse).
Delhaye, Thibault ; Ge, C. ; Francis, Laurent ; Flandre, Denis ; Cretu, E.. Macro-Modeling Library in Simscape for MEMS Pressure Sensors Based on Energy-Flow Paradigm. Design, Test, Integration & Packaging of MEMS/MOEMS (Paris (France), du 12/05/2019 au 15/05/2019). In: Proceedings of the conference Design, Test, Integration & Packaging of MEMS/MOEMS, IEEE, 2019. doi:10.1109/DTIP.2019.8752962.
Martínez-Pérez, Antonio D. ; Gimeno Gasca, Cecilia ; Flandre, Denis ; Aznar, Francisco ; Royo, Guillermo ; Sánchez-Azqueta, Carlos. Methodology for Performance Optimization in Noise- and Distortion-Canceling LNA. SMACD-16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (Lausanne (Suisse), du 15/07/2019 au 18/07/2019). In: Proceedings of SMACD 2019, IEEE, 2019. doi:10.1109/SMACD (Accepté/Sous presse).
Martínez Pérez, Antonio Dionisio ; Gimeno Gasca, Cecilia ; Flandre, Denis ; Aznar, Francisco ; Royo, Guillermo ; Azqueta, Carlos Sánchez ; Celma, Santiago. Metodología de optimización para LNA de cancelación de ruido y distorsión. VIII JORNADA DE JÓVENES INVESTIGADORES DEL I3A (Zaragoza (Spain), 06/06/2019) (Accepté/Sous presse).
Delhaye, Thibault ; Ge, C. ; Francis, Laurent ; Cretu, E. ; Flandre, Denis. One-Day Fast-Prototyping Process for Functionalized Membrane Array on Flexible Substrate. 45th International Conference on Micro & Nano Engineering (Rhodes (Greece), du 23/09/2019 au 26/09/2019) (Accepté/Sous presse).
Zhukova, Maria ; Kotipalli, Ratan ; Poncelet, Olivier ; Samain, Louise ; Fourdrinier, Lionel ; Flandre, Denis. Optimization of optoelectrical properties of DC magnetron sputtered Cu 2 ZnSnS 4 absorber layer. E-MRS 2019(European Materials Research Society) - Spring Meeting 2019 (Acropolis Congress Center Nice (France), du 27/05/2019 au 31/05/2019) (Soumis).
Van Brandt, Léopold ; Kazemi Esfeh, Babak ; Kilchytska, Valeriya ; Flandre, Denis. Robust Methodology for Low-Frequency Noise Power Analyses in Advanced MOS Transistors. 5th joint EUROSOI – ULIS 2019 Conference (Grenoble (France), du 01/04/2019 au 03/04/2019) (Accepté/Sous presse).
Nyssens, Lucas ; Halder, Arka ; Kazemi Esfeh, Babak ; Planes, Nicolas ; Haond, Michel ; Flandre, Denis ; Raskin, Jean-Pierre ; Kilchytska, Valeriya. Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures . 49th European Solid-State Device Research Conference (ESSDERC 2019) (Cracow (Poland), du 23/09/2019 au 26/09/2019).
Martins d’Oliveira, Ligia ; Kilchytska, Valeriya ; Planes, Nicolas ; Flandre, Denis ; de Souza, Michelly . Subthreshold Operation of Self-Cascode Structure Using UTBB FD SOI Planar MOSFETs. IEEE S3S Conference (San Jose (USA), 10/2019).
Lontchi Jioleo, Jackson ; Zhukova, Maria ; Kovacic, M. ; Krc, J. ; Chen, W-C. ; Edoff, M. ; Bose, S. ; Salomé, P. ; Flandre, Denis. Ultra thin CIGS: 1D/2D modelling methodology and impactful results for cell design. IW CIGSTECH 10, 10th International Workshop on CIGS Solar Cell Technology (Paris (France), du 23/05/2019 au 24/05/2019).
Rudenko, T. ; Nazarov, A. ; Barraud, S. ; Kilchytska, Valeriya ; Flandre, Denis. gm/ID-derivative Method for Threshold Voltage Extraction in Junctionless MOSFETs. 5th joint EUROSOI – ULIS 2019 Conference (Grenoble (France), 04/2019).
Kazemi Esfeh, Babak ; Masselus, Matthieu ; Planes, N. ; Haond, M. ; Raskin, Jean-Pierre ; Flandre, Denis ; Kilchytska, Valeriya. 28 FDSOI Analog and RF Figures of merit at Cryogenic Temperatures. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS 2018 (Granada (Spain), du 19/03/2018 au 21/03/2018).
Kazemi Esfeh, Babak ; Kilchytska, Valeriya ; Planes, N. ; Haond, M. ; Flandre, Denis ; Raskin, Jean-Pierre. 28 FDSOI RF Figures of Merits and Parasitic Elements at Cryogenic Temperature. IEEE S3S Conference (San Francisco (USA), du 15/10/2018 au 18/10/2018). In: Proceedings of the IEEE S3S Conference, IEEE, 2018, 2.
Dekimpe, Rémi ; Xu, Pengcheng ; Schramme, Maxime ; Flandre, Denis ; Bol, David. A Battery-less BLE IoT Motion Detector Supplied by 2.45-GHz Wireless Power Transfer. 2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS 2018) (Platja d'Aro (Spain), du 02/07/2018 au 04/07/2018).
Nawaz, Kashif ; Levi, Itamar ; Standaert, François-Xavier ; Flandre, Denis. A Transient Noise Analysis of Secured Dual-rail based Logic Style. 2nd New Generation of Circuits & Systems Conference (NGCAS 2018) (Valetta (Malta), du 20/11/2018 au 23/11/2018).
Haine, Thomas ; Flandre, Denis ; Bol, David. An 8-T ULV SRAM macro in 28nm FDSOI with 7.4 pW/bit retention power and back-biased-scalable speed/energy trade-off. IEEE S3S Conference (San Francisco (USA), du 15/10/2018 au 18/10/2018).
Martins d'Oliveira, Ligia ; de Souza, Michelly ; Kilchytska, Valeriya ; Flandre, Denis. Asymmetric Self-Cascode Current-Voltage Constructing Algorithm for Analog Figures-of-Merit Extraction. 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018) (Bento Gonçalves, Rio Grande do Sul (Brazil ), du 27/08/2018 au 31/08/2018). In: proceedings of SBMicro 2018.
Kamel, Dina ; Bellizia, Davide ; Standaert, François-Xavier ; Flandre, Denis ; Bol, David. Demonstrating an LPPN Processor (Short Paper). 2018 Workshop on Attacks and Solutions in Hardware Security (ASHES@CCS 2018) (Toronto (Canada), 19/10/2018). In: Proceedings of the 2018 Workshop on Attacks and Solutions in Hardware Security (ASHES@CCS 2018), Chip-Hong Chip, Ulrich Rührmair, Daniel Holcomb, Jorge Guajardo, 2018. 978-1-4503-5996-2, p. 18-23. doi:https://doi.org/10.1145/3266444.3266445. doi:10.1145/3266444.3266445.
Martins d'Oliveira, Ligia ; de Souza, Michelly ; Kilchytska, Valeriya ; Flandre, Denis. Design Benefits of Self-Cascode Configuration for Analog Applications in 28nm FDSOI technology. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS 2018 (Granada (Spain), du 19/03/2018 au 21/03/2018) (Accepté/Sous presse).
Xu, Pengcheng ; Flandre, Denis ; Bol, David. Design of a 2.45-GHz RF Energy Harvester for SWIPT IoT smart sensors. IEEE Asian Solid-State Circuits Conference 2018 (ASSCC 2018) (Tainan (Taiwan), du 05/11/2018 au 07/11/2018). In: Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018, 107-110.
Bessia, Fabricio Alcalde ; Flandre, Denis ; André, Nicolas ; Irazoqui, Julieta ; Pérez, Martin ; Berisso, Mariano Gómez ; Lipovetzky, Jose. Fully Depleted SOI MOSFET Sensors in Accumulation-mode for Total Dose Measurement. 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (Sydney (Australia), du 10/11/2018 au 17/11/2018), p. 2. In: Proceedings of the IEEE Nuclear Science Symposium and Medical Imaging Conference, IEEE, 2018, 2.
Haine, Thomas ; Segers, Johan ; Flandre, Denis ; Bol, David. Gradient Importance Sampling: an Efficient Statistical Extraction methodology of High-Sigma SRAM Dynamic Characteristics. DATE 2018, Design, Automation and Test in Europe (Dresden (Germany), du 19/03/2018 au 23/03/2018). In: 2018 Design, Automation Test in Europe Conference Exhibition (PROCEEDINGS), 2018, 195-200. doi:10.23919/DATE.2018.8342002.
Nawaz, Kashif ; Van Brandt, Léopold ; Standaert, François-Xavier ; Flandre, Denis. Let’s make it Noisy: A Simulation Methodology for adding Intrinsic Physical Noise to Cryptographic Designs. 14th Conference on PhD Research in Microelectronics and Electronics (Prague (Czech Republic), du 02/07/2018 au 05/07/2018).
Assalti, Rafael ; de Souza, Michelly ; Flandre, Denis. Linearity enhancement in asymmetric self-cascode composed by FD SOI nMOSFETs. 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018) (Bento Gonçalves, Rio Grande do Sul, Brazil, du 27/08/2018 au 31/08/2018). In: Proceedings of SBMicro 2018.
Gimeno Gasca, Cecilia ; Flandre, Denis ; Bol, David. Low-Power Half-Rate Dual-Loop Clock-Recovery System in 28-nm FDSOI. 2018 IEEE 9th Latin American Symposium on Circuits & Systems (LASCAS 2018) (Puerto Vallarte (Mexico), du 25/02/2018 au 28/02/2018) (Accepté/Sous presse).
Restani Alves, Camila ; de Souza, Michellu ; Flandre, Denis. Numerical Simulation and Analysis of Transistor Channel Length and Doping Mismatching in GC SOI nMOSFETs Analog Figures of Merit. 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018) (Bento Gonçalves, Rio Grande do Sul (Brazil ), du 27/08/2018 au 31/08/2018). In: Proceedings of SBMicro 2018.
Amor, Sedki ; Kilchytska, Valeriya ; André, Nicolas ; Li, Guoli ; Rebey, A. ; Francis, Laurent ; Flandre, Denis. On-membrane PD SOI MOSFET with micro-heater for TID in-situ annealing: experiments versus Eldo and Atlas simulations. 14th International School on the Effects of Radiation on Embedded Systems for Space Applications (SERESSA 2018) (Noordwijk (the netherlands), du 12/11/2018 au 17/11/2018). In: Proceedings of SERESSA 2018, 2018, 1 (Accepté/Sous presse).
Saoutieff, Elise ; Faucon, Adrien ; Boisseau, Sébastien ; Ernst, Thomas ; Policheti, Tiziana ; Miglietta, Maria Lucia ; Alfano, Brigida ; Massera, Ettore ; De Vito, Saverio ; Pétré, Sylvain ; Walewyns, Thomas ; André, Nicolas ; Flandre, Denis ; Moldovan, Carmen ; Dinulescu, Silviu ; Greitans, Modris ; Romani, Aldo. Sensors platform for health and environmental monitoring. Workshop Nano2sense (Grenoble (France), du 06/11/2018 au 07/11/2018). In: Proceedings of the Workshop Nano2sense 2018 (Accepté/Sous presse).
Vono Peruzzi, Vinicius ; da Silva, Gabriel Augusto ; Renaux, Christian ; Flandre, Denis ; Pinillos Gimenez, Salvador. Using Statistical Student's t-Test to Qualify the Electrical Performance of the Diamond MOSFETs. 2018 33rd Symposium on Microelectronics Technology and devices (SBMicro 2018) (Bento Gonçalves, Rio Grande do Sul (Brazil ), du 27/08/2018 au 31/08/2018). In: Proceedings of SBMicro 2018.
Flandre, Denis ; André, Nicolas ; Delhaye, Thibault ; Walewyns, Thomas ; Francis, Laurent. Wearable physical & physiological low-power sensors. Workshop at the 48th ESSDERC-ESSCIRC Conference 2018 (Dresden (Germany), du 03/09/2018 au 06/09/2018). In: proceedings of the ESSDERC-ESSCIRC Conference 2018, 2018, 18.
Poncelet, Olivier ; Flandre, Denis ; Kotipalli, Raja Venkata Ratan ; Crahay, André. METHOD FOR PRODUCING IMPROVED BLACK SILICON ON A SILICON SUBSTRATE. Numéro de priorité. .