All 'electronic circuits and systems' publications

Journal Articles

1. Parion, Jonathan; Scaffidi, Romain; Duerinckx, Filip; Sivaramakrishnan, Hariharsudan; Flandre, Denis; Poortmans, Jef; Vermang, Bart. Comparative study of the interface passivation properties of LiF & Al2O3 using silicon MIS capacitor. In: Applied Physics Letters, Vol. 124, no.14, p. 142901 (2024). doi:10.10363/5.0203484. http://hdl.handle.net/2078.1/286543

2. Masarweh, Eléonore; Arseenko, Mariia; Guaino, Philippe; Flandre, Denis. Membrane-based mechanical characterization of screen-printed inks: Deflection analysis of ink layers on polyimide membranes. In: Applied Research, (2024). doi:10.1002/appl.202300113 SECTIONS. http://hdl.handle.net/2078.1/285599

3. Lefebvre, Martin; Bol, David. MANTIS: A Mixed-Signal Near-Sensor Convolutional Imager SoC Using Charge-Domain 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection. In: IEEE Journal of Solid State Circuits, (2024). doi:10.1109/JSSC.2024.3484766 (Accepté/Sous presse). http://hdl.handle.net/2078.1/293316

4. Lefebvre, Martin; Bol, David. A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-µm Bulk and 22-nm FD-SOI. In: IEEE Journal of Solid-State Circuits, Vol. 59, no. 11, p. 3752-3766 (November 2024). doi:10.1109/jssc.2024.3402960. http://hdl.handle.net/2078.1/288064

5. Zeng, Xi; Zhukova, Maria; Faniel, Sébastien; Li, Guoli; Flandre, Denis. Properties and Aging of Bottom-Contact CuO/Au Transmission Line Model (TLM) Structures. In: IEEE Transactions on Electron Devices, p. 6254-6260 (2024). http://hdl.handle.net/2078.1/290715

6. Lefebvre, Martin; Bol, David. A nA-Range Area-Efficient Sub-100-ppm/°C Peaking Current Reference Using Forward Body Biasing in 0.11-µm Bulk and 22-nm FD-SOI. In: IEEE Journal of Solid-State Circuits, (2024). doi:10.1109/jssc.2024.3406423 (Accepté/Sous presse). http://hdl.handle.net/2078.1/288265

7. Gauthier Roussilhe; Pirson, Thibault; Mathieu Xhonneux; Bol, David. From silicon shield to carbon lock-in? The environmental footprint of electronic components manufacturing in Taiwan (2015–2020). In: Journal of Industrial Ecology, Vol. 28, no.5, p. 1212-1226 (2024). doi:10.1111/jiec.13487. http://hdl.handle.net/2078.1/292186

8. Hong, Ruohao; He, Penghui; Zhang, Sen; Hong, Xitong; Tian, Qianlei; Liu, Chang; Bu, Tong; Su, Wanhan; Li, Guoli; Flandre, Denis. Compositional Engineering of Cu-Doped SnO Film for Complementary Metal Oxide Semiconductor Technology. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 24, no.4, p. 1176-1183 (2024). doi:10.1021/acs.nanolett3c03953. http://hdl.handle.net/2078.1/287695

9. Golard, Louis; Dethienne, Robin; Louveaux, Jérôme; Bol, David. A parametric life-cycle model for assessing environmental impacts of 4G and 5G cellular base stations. In: The International Journal of Life Cycle Assessment, (2024). (Soumis). http://hdl.handle.net/2078.1/295274

10. Xu, Pengcheng; Flandre, Denis; Bol, David. Analysis and Design of RF Energy-Harvesting Systems with Impedance-Aware Rectifier Sizing. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, Vol. 70, no. 2, p. 367-365 (2023). doi:10.1109/TCSII.2022.3171470 (Accepté/Sous presse). http://hdl.handle.net/2078.1/264155

11. Vanbrabant, Martin; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs. In: Solid - State Circuits, Vol. 2023, p. 108623 (2023). doi:10.1016/j.sse.2023.108623. http://hdl.handle.net/2078.1/283154

12. Qaderi, Fatemeh; Rosca, Teodor; Burla, Maurizio; Leuthold, Juerg; Flandre, Denis; Ionescu, Adrian M. Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2. In: Communications Materials, , no.34 (2023). doi:10.1038/s43246-023-00350-x. http://hdl.handle.net/2078.1/283150

13. Xie, Zhengdao; Li, Guoli; Xia, Shengxuan; Liu, Chang; Zhang, Sen; Flandre, Denis. Ultimate Limit in Optoelectronic Performances of Monolayer WSe2 Sloping-Channel Transistors. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 23, p. 6664-6672 (2023). doi:10.1021/acs.nanolett.3c01866. http://hdl.handle.net/2078.1/283147

14. Afzalian, Aryan; Flandre, Denis. Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection. In: Sensors, Vol. 23, no.12, p. 5405 (2023). doi:10.3390/s23125405. http://hdl.handle.net/2078.1/283148

15. Puyol Troisi, Rafael; Walewyns, Thomas; Francis, Laurent; Flandre, Denis. Design of Ultra-Low-Power Sensor Readout Circuits Through Adaptive Biasing for Gas Monitoring With Chemiresistive Sensors. In: IEEE Sensors Journal, Vol. 23, no.22, p. 27468-27477 (2023). doi:10.1109/JSEN.2023.3322393. http://hdl.handle.net/2078.1/283145

16. Lefebvre, Martin; Flandre, Denis; Bol, David. A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI. In: IEEE Journal of Solid-State Circuits, Vol. 58, no. 8, p. 2239-2251 (August 2023). doi:10.1109/jssc.2023.3240209. http://hdl.handle.net/2078.1/272466

17. Kaziz, Sinda; Hadj Said, Mohamed; Imburgia, Antonino; Maamer, Bilel; Flandre, Denis; Romano, Pietro; Tounsi, Fares. Radiometric Partial Discharge Detection: A Review. In: energies, Vol. 16, no.4, p. 1978 (2023). doi:10.3390/en16041978. http://hdl.handle.net/2078.1/272892

18. Golard, Louis; Louveaux, Jérôme; Bol, David. Evaluation and projection of 4G and 5G RAN energy footprints: the case of Belgium for 2020–2025. In: Annales des Télécommunications, Vol. online (2023). doi:10.1007/s12243-022-00932-9. http://hdl.handle.net/2078.1/267972

19. D. Martinez-Perez, Antonio; Aznar, Francisco; Flandre, Denis; Celma, Santiago. Design-Window Methodology for Inductorless Noise-Cancelling CMOS LNAs. In: I E E E Access, Vol. 10, p. 29482-29492 (2022). doi:10.1109/ACCESS.2022.3158356. http://hdl.handle.net/2078.1/259751

20. Oliveira, Kevin; P. Teixeira, Jennifer; Chen, Wei-Chao; Lontchi Jioleo, Jackson; J. N. Oliveira, António; Çaha, Ihsan; Deepak Francis, Leonard; Flandre, Denis; Edoff, Marika; A. Fernandes, Paulo; M. P. Salomé, Pedro. SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness. In: IEEE JOURNAL OF PHOTOVOLTAICS, , p. 8 (2022). (Accepté/Sous presse). http://hdl.handle.net/2078.1/260533

21. Vanbrabant, Martin; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. Experimental study of thermal coupling effects in FD-SOI MOSFET. In: Solid-State Electronics, Vol. 194, no.108362, p. 4 (2022). doi:10.1016/j.sse.2022.108362. http://hdl.handle.net/2078.1/260779

22. Van Brandt, Léopold; Saeidi, Roghayeh; Bol, David; Flandre, Denis. Accurate and Insightful Closed-Form Prediction of Subthreshold SRAM Hold Failure Rate. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, Vol. 69, no.7, p. 2767-2780 (2022). doi:10.1109/TCSI.2022.3164680. http://hdl.handle.net/2078.1/264157

23. Dekimpe, Rémi; Bol, David. ECG Arrhythmia Classification on an Ultra-Low-Power Microcontroller. In: IEEE Transactions on Biomedical Circuits and Systems, Vol. 16, no.3, p. 456-466 (2022). http://hdl.handle.net/2078.1/268570

24. Puyol Troisi, Rafael; Pétré, Sylvain; Danlée, Yann; Walewyns, Thomas; Francis, Laurent; Flandre, Denis. An Ultra-Low-Power Read-Out Circuit for Interfacing Novel Gas Sensors Matrices. In: IEEE Sensors Journal, Vol. 22, no.10, p. 9521-9533 (2022). doi:10.1109/JSEN.2022.3165755. http://hdl.handle.net/2078.1/260786

25. Yan, Yiyi; Kilchytska, Valeriya; Flandre, Denis; Raskin, Jean-Pierre. Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method. In: Solid-State Electronics, Vol. 194, p. 4 (2022). doi:10.1016/j.sse.2022.108347. http://hdl.handle.net/2078.1/260500

26. He, Penghui; Ding, Chunchun; Li, Guoli; Hu, Wei; Ma, Chao; Flandre, Denis; Iñíguez, Benjamín; Liao, Lei; Lan, Lingfeng; Liu, Xingqiang. Enhanced Stability and Mobility of Solution-Processed Oxide Thin-Film Transistors with Bilayer Terbium-incorporated Indium Oxide Channel. In: Applied Physics Letters, Vol. 121, no.19, p. 21 (2022). http://hdl.handle.net/2078.1/266612

27. Lefebvre, Martin; Bol, David. A Family of Current References Based on 2T Voltage References: Demonstration in 0.18-μm With 0.1-nA PTAT and 1.1-μA CWT 38-ppm/°C Designs. In: IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 69, no. 8, p. 3237-3250 (August 2022). doi:10.1109/TCSI.2022.3172647. http://hdl.handle.net/2078.1/260735

28. Kaziz, Sinda; Romano, Pietro; Imburgia, Antonino; Ala, Guido; Sghaier, Halim; Flandre, Denis; Tounsi, Fares. PCB-Based Planar Inductive Loops for Partial Discharges Detection in Power Cables. In: Sensors, Vol. 23, no.1, p. 290 (2022). doi:10.3390/s23010290. http://hdl.handle.net/2078.1/272245

29. Tounsi, Fares; Hadj Said, Mohamed; Hauwaert, Margo; Kaziz, Sinda; Francis, Laurent; Raskin, Jean-Pierre; Flandre, Denis. Variation Range of Different Inductor Topologies with Shields for RF and Inductive Sensing Applications. In: Sensors, Vol. 22, no.9, p. 15 (2022). doi:10.3390/s22093514. http://hdl.handle.net/2078.1/260806

30. Schramme, Maxime; Van Brandt, Léopold; Flandre, Denis; Bol, David. Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS, Vol. 69, no. 5, p. 1883-1895 (2022). doi:10.1109/TCSI.2022.3144527. http://hdl.handle.net/2078.1/258018

31. Zeng, Xi; Lontchi Jioleo, Jackson; Zhukova, Maria; Fourdrinier, Lionel; Qadir, Israr; Ren, Yi; Niemi, Esko; Li, Guoli; Flandre, Denis. High-responsivity broadband photodetection of an ultra-thin In2S3/CIGS heterojunction on steel. In: Optics Letters, Vol. 46, no.10, p. 2288-2291 (2021). doi:10.1364/OL.423999. http://hdl.handle.net/2078.1/248722

32. Chen, Qi; Li, Guoli; André, Nicolas; Liu, Xingqiang; Xia, Zhen; Flandre, Denis; Liao, Lei. Origin of Low-Temperature Negative Transconductance in Multilayer MoS2 Transistors. In: Applied Physics Letters, , p. 10 (2021). doi:10.1063/5.0058545 (Accepté/Sous presse). http://hdl.handle.net/2078.1/249728

33. M. V. Cunha, José; Barreiros, M. Alexandra; Curado, Marco A.; Lopes, Tomás S.; Oliveira, Kevin; Oliveira, António J. N.; Barbosa, João R. S.; Vilanova, António; Brites, Maria João; Mascarenhas, João; Flandre, Denis; Silva, Ana G.; Fernandes, Paulo A.; Salomé, Pedro M. P. Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization. In: Advanced Materials Interfaces, , p. 1-12 (2021). doi:10.1002/admi.202101004. http://hdl.handle.net/2078.1/251370

34. Scaffidi, Romain; Buldu, Dilara G.; Brammertz, Guy; Kohl, Thierry; Birant, Gizem; Meuris, Marc; Poortmans, Jef; Flandre, Denis; Vermang, bart. Comparative study of Al2O3 and HfO2 for surface passivation of Cu(In,Ga)Se2 thin-films: An innovative Al2O3/HfO2 multi-stack design. In: Physica Status Solidi A, (2021). doi:10.1002/pssa.202100073. http://hdl.handle.net/2078.1/248737

35. Dekimpe, Rémi; Bol, David. A Configurable ULP Instrumentation Amplifier with Pareto-Optimal Power-Noise Trade-Off Achieving 1.93 NEF in 65nm CMOS. In: IEEE Transactions on Circuits and Systems. Part 2: Express Briefs, Vol. 68, no.7, p. 2272-76 (2021). doi:10.1109/TCSII.2021.3059311. http://hdl.handle.net/2078.1/248911

36. Bol, David; Schramme, Maxime; Moreau, Ludovic; Xu, Pengcheng; Dekimpe, Rémi; Saeidi, Roghayeh; Haine, Thomas; Frenkel, Charlotte; Flandre, Denis. SleepRunner: A 28-nm FDSOI ULP Cortex-M0 MCU With ULL SRAM and UFBR PVT Compensation for 2.6–3.6-μW/DMIPS 40–80-MHz Active Mode and 131-nW/kB Fully Retentive Deep-Sleep Mode. In: IEEE Journal of Solid State Circuits, Vol. 56, no.7, p. 2256-2269 (2021). doi:10.1109/JSSC.2021.3056219. http://hdl.handle.net/2078.1/248907

37. Kneip, Adrian; Bol, David. Impact of Analog Non-Idealities on the Design Space of 6T-SRAM Current-Domain Dot-Product Operators for In-Memory Computing. In: IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 68, no.5, p. 1931-1944 (2021). doi:10.1109/TCSI.2021.3058510. http://hdl.handle.net/2078.1/246615

38. GALEMBECK, EGON HENRIQUE SALERNO; Renaux, Christian; SWART, JACOBUS WILLIBRORDUS; Flandre, Denis; GIMENEZ, SALVADOR PINILLOS. The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures. In: I E E E Journal of the Electron Devices Society, Vol. 9, p. 415-423 (2021). doi:10.1109/JEDS.2021.3071399. http://hdl.handle.net/2078.1/248485

39. Tapperel, Joachim; Xhonneux, Mathieu; Bol, David; Louveaux, Jérôme; Burg, Andras. Enhancing the Reliability of Dense LoRaWAN Networks With Multi-User Receivers. In: IEEE Open Journal of the Communications Society, Vol. 2, p. 2725-2738 (2021). doi:10.1109/OJCOMS.2021.3134091. http://hdl.handle.net/2078.1/260532

40. Moreau, Nicolas; Pirson, Thibault; Le Brun, Grégoire; Delhaye, Thibault; Sandu, Georgiana; Paris, Antoine; Bol, David; Raskin, Jean-Pierre. Could Unsustainable Electronics Support Sustainability. In: Sustainability, Vol. 13, no. 6541, p. 7 (2021). doi:10.3390/su13126541. http://hdl.handle.net/2078.1/251547

41. Xhonneux, Mathieu; Afisiadis, Orion; Bol, David; Louveaux, Jérôme. A Low-Complexity LoRa Synchronization Algorithm Robust to Sampling Time Offsets. In: IEEE Internet of Things Journal, , p. 14 (2021). doi:10.1109/JIOT.2021.3101002 (Accepté/Sous presse). http://hdl.handle.net/2078.1/251518

42. Nait Saada, Tamazouzt; Pang, Liuqing; Sravan Kumar, Kilaparthi; H.B. Dourado, André; D. Germano, Lucas; D. Vicentini, Eduardo; P.L. Batista, Ana; G.S. de Oliveira-Filho, Antonio; Dumeignil, Franck; Paul, Sébastien; Wojcieszak, Robert; Melinte, Sorin; Sandu, Georgiana; Petretto, Guido; Rignanese, Gian-Marco; Henrique Braga, Adriano; F. Rosado, Taissa; Meziane, Dalila; Boukherroub, Rabah; I. Córdoba de Torresi, Susana; G.M. da Silva, Anderson; Szunerits, Sabine. The importance of the shape of Cu2O nanocrystals on plasmon-enhanced oxygen evolution reaction in alkaline media. In: Electrochimica Acta, Vol. 390, p. 138810 (2021). doi:10.1016/j.electacta.2021.138810. http://hdl.handle.net/2078.1/249120

43. Schwarz, Mike; Kloes, Alexander; Flandre, Denis. Temperature-dependent performance of Schottky-Barrier FET ultra-low-power diode. In: Solid-State Electronics, Vol. 184, no.108124, p. 8 (2021). doi:10.1016/j.sse.2021.108124. http://hdl.handle.net/2078.1/248657

44. Roisin, Nicolas; Brunin, Guillaume; Rignanese, Gian-Marco; Flandre, Denis; Raskin, Jean-Pierre. Indirect light absorption model for highly strained silicon infrared sensors. In: Journal of Applied Physics, Vol. 30, no.5, p. 30 (2021). doi:10.1063/5.0057350 (Accepté/Sous presse). http://hdl.handle.net/2078.1/249729

45. Sabri Alirezaei, Iman; André, Nicolas; Amor, Sedki; Gérard, Pierre; Flandre, Denis. An Ultra-Thin Ultraviolet Enhanced Backside- Illuminated Single-Photon Avalanche Diode with 650nm-Thin Silicon Body Based on SOI Technology. In: IEEE Journal of Selected Topics in Quantum Electronics, , p. 11 (2021). doi:10.1109/JSTQE.2021.3129274. http://hdl.handle.net/2078.1/253906

46. Storrer, Laurent; Yildirim, Hasan Can; Crauwels, Morgane; Pocoma Copa, Evert I.; Pollin, Sofie; Louveaux, Jérôme; De Doncker, Philippe; Horlin, François. Indoor Tracking of Multiple Individuals With an 802.11ax Wi-Fi-Based Multi-Antenna Passive Radar. In: IEEE Sensors Journal, Vol. 21, no.18, p. 20462-20474 (2022). http://hdl.handle.net/2078.1/265280

47. Frenkel, Charlotte; Lefebvre, Martin; Bol, David. Learning Without Feedback: Fixed Random Learning Signals Allow for Feedforward Training of Deep Neural Networks. In: Frontiers in Neuroscience, Vol. 15, p. 629892 (2021). doi:10.3389/fnins.2021.629892. http://hdl.handle.net/2078.1/245286

48. Wei, Peng; Sabri Alirezaei, Iman; André, Nicolas; Zeng, Xi; Bouterfa, Mohamed; Wang, Bin; Zeng, Yun; Flandre, Denis. The Shift of Breakdown Voltage for Silicon Membrane Strip Detectors Resulting from Surface Avalanche. In: Journal of Applied Physics, Vol. 129, no.21, p. 214501-1/7 (2021). doi:10.1063/5.0049490. http://hdl.handle.net/2078.1/246703

49. Pirson, Thibault; Bol, David. Assessing the embodied carbon footprint of IoT edge devices with a bottom-up life-cycle approach. In: Journal of Cleaner Production, Vol. 322, no. 128966, p. 13 (2021). doi:10.1016/j.jclepro.2021.128966. http://hdl.handle.net/2078.1/251545

50. Zhukova, Maria; Kotipalli, Ratan; PONCELET, Olivier; Samain, Louise; Fourdrinier, Lionel; Flandre, Denis. Correlation and optimization of the optoelectrical properties of DC magnetron-sputtered Cu2ZnSnS4 absorber layer as a function of the material composition. In: Materials Science in Semiconductor Processing, Vol. 121, no.105307, p. 1-11 (2021). doi:10.1016/j.mssp.2020.105367. http://hdl.handle.net/2078.1/249828

51. Schramme, Maxime; Gimeno Gasca, Cecilia; Cathelin, Andreia; Flandre, Denis; Bol, David. A 2.5-GHz Clock Recovery Circuit Based on a Back-Bias-Controlled Oscillator in 28-nm FDSOI. In: IEEE Solid-State Circuits Letters, Vol. 3, p. 478-481 (2020). doi:10.1109/LSSC.2020.3026759. http://hdl.handle.net/2078.1/235852

52. Galy, Philippe; Soto, F.; Bourgeat, J.; Jacquier, B.; Kilchytska, Valeriya; Flandre, Denis. Experimental results on diodes and BIMOS ESD devices in 28 nm FD-SOI under TLP & TID radiation. In: Microelectronics Reliability, Vol. 114, p. 113938 (2020). doi:10.1016/j.microrel.2020.113938. http://hdl.handle.net/2078.1/237494

53. Wan, Da; Hao, Huang; CHEN, Chen; Abliz, Ablat; Ye, Cong; Liu, Xingqiang; Zou, Xuming; Li, Guoli; Flandre, Denis; Liao, Lei. High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping. In: IEEE Electron Device Letters, Vol. 41, no.6, p. 944-947 (2020). doi:10.1109/LED.2020.2988488. http://hdl.handle.net/2078.1/229960

54. Levi, Itamar; Bellizia, Davide; Bol, David; Standaert, François-Xavier. Ask Less, Get More: Side-Channel Signal Hiding, Revisited. In: IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 67, no.12, p. 4904 - 4917 (2020). doi:10.1109/TCSI.2020.3005338. http://hdl.handle.net/2078.1/239167

55. Stoukatch, Serguei; André, Nicolas; Delhaye, Thibault; Dupont, François; Redouté, Jean-Michel; Flandre, Denis. Anisotropic conductive film & flip-chip bonding for low-cost sensor prototyping on rigid & flex PCB. In: IEEE Sensors, Vol. 2020, p. 1-4 (2020). doi:10.1109/SENSORS47125.2020.9278669. http://hdl.handle.net/2078.1/243580

56. Gimeno Gasca, Cecilia; Flandre, Denis; Schramme, Maxime; Frenkel, Charlotte; Bol, David. A 2.24-pJ/bit 2.5-Gb/s UWB receiver in 28-nm FDSOI CMOS for low-energy chip-to-chip communications. In: A E Ue: International Journal of Electronics and Communication, Vol. 114, no. 152996, p. 8 (2020). doi:10.1016/j.aeue.2019.152996. http://hdl.handle.net/2078.1/223380

57. Nguyen, T.-H.; Van Eeckhaute , M.; Determe, J.-F.; Louveaux, Jérôme; De Doncker, Philippe; Horlin, F. Analysis of residual CFO impact on downlink massive MISO systems. In: Electronic Letters, Vol. 55, no.18, p. 1017-1019 (2019). doi:10.1049/el.2019.1891. http://hdl.handle.net/2078.1/265312

58. Frenkel, Charlotte; Lefebvre, Martin; Legat, Jean-Didier; Bol, David. A 0.086-mm2 12.7-pJ/SOP 64k-Synapse 256-Neuron Online-Learning Digital Spiking Neuromorphic Processor in 28-nm CMOS. In: IEEE Transactions on Biomedical Circuits and Systems, Vol. 13, no.1, p. 145-158 (2019). doi:10.1109/TBCAS.2018.2880425. http://hdl.handle.net/2078.1/214668

59. Kovačič, M.; Krč, J.; Lipovšek, B.; Chen, W-C.; Edoff, M.; Bolt, P.J.; van Deelen, J.; Zhukova, Maria; Lontchi Jioleo, Jackson; Flandre, Denis; Salomé, P.; Topič, M. Modelling Supported Design of Light Management Structures in Ultra-Thin Cigs Photovoltaic Devices. In: Informacije MIDEM : journal of microelectronics, electric components and materials, Vol. 49, no.3, p. 183-190 (2019). doi:10.33180/InfMIDEM2019.307. http://hdl.handle.net/2078.1/226845

60. Frenkel, Charlotte; Legat, Jean-Didier; Bol, David. MorphIC: A 65-nm 738k-Synapse/mm2 Quad-Core Binary-Weight Digital Neuromorphic Processor with Stochastic Spike-Driven Online Learning. In: IEEE Transactions on Biomedical Circuits and Systems, Vol. 13, no.5, p. 999-1010 (2019). doi:10.1109/TBCAS.2019.2928793. http://hdl.handle.net/2078.1/226234

61. Gimeno Gasca, Cecilia; Bol, David; Flandre, Denis. Multilevel Half-Rate Detector for Clock and Data Recovery Circuits. In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, , p. 5 (2018). doi:10.1109/TVLSI.2018.2826440. http://hdl.handle.net/2078.1/199147

62. Gimeno Gasca, Cecilia; Flandre, Denis; Bol, David. Analysis and Specification of an IR-UWB Transceiver for High-Speed Chip-to-Chip Communication in a Server Chassis. In: IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 65, no.6, p. 2015-2023 (2018). doi:10.1109/TCSI.2017.2765312. http://hdl.handle.net/2078.1/211253

63. Galembeck, Egon H.S.; Renaux, Christian; Flandre, Denis; Finco, Saulo; Gimenez, Salvador P. Boosting the SOI MOSFET Electrical Performance by Using the Octogonal Layout Style in High Temperature Environment. In: IEEE Transactions on Device and Materials Reliability, Vol. 17, no.1, p. 1-8 (03/2017). doi:10.1109/TDMR.2017.2652729. http://hdl.handle.net/2078.1/183152

64. Poncelet, Olivier; Kotipalli, Raja Venkata Ratan; Vermang, Bart; Macleod, Angus; Francis, Laurent; Flandre, Denis. Optimisation of rear reflectance in ultra-thin CIGS solar cells towards >20% efficiency. In: Solar Energy, Vol. 146, p. 443-452. doi:10.1016/j.solener.2017.03.001. http://hdl.handle.net/2078.1/184794

65. Doria, R.T.; Flandre, Denis; Trevisoli, R.; De Souza, Michelly; Pavanello, Marcello Antonio. Effect of the back bias on the analog performance of standard FD and UTBB transitors-based self-cascode Structures. In: Semiconductor Science and Technology, Vol. 32, p. 1 (2017). doi:10.1088/1361-6641/aa7659. http://hdl.handle.net/2078.1/191191

66. Pereira, A.S.N.; de Streel, Guerric; Planes, N.; Haond, M.; Giacomini, R.; Flandre, Denis; Kilchytska, Valeriya. An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models. In: Solid-State Electronics, Vol. 128, p. 67-71 (15/10/2016). doi:10.1016/j.sse.2016.10.017. http://hdl.handle.net/2078.1/181095

67. Amor, Sedki; André, Nicolas; Gérard, Pierre; Ali, S.Z.; Udrea, F.; Tounsi, F.; Mezghani, B.; Francis, laurent; Flandre, Denis. Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C. In: Semiconductor Science and Technology, Vol. 32, no.1, p. 9 (19/12/2016). doi:10.1088/1361-6641/32/1/014001. http://hdl.handle.net/2078.1/181119

68. de Streel, Guerric; Stas, François; Gurné, Thibaut; Durant, François; Frenkel, Charlotte; Cathelin, Andreia; Bol, David. SleepTalker: A ULV 802.15.4a IR-UWB Transmitter SoC in 28-nm FDSOI Achieving 14 pJ/b at 27 Mb/s With Channel Selection Based on Adaptive FBB and Digitally Programmable Pulse Shaping. In: IEEE Journal of Solid State Circuits, Vol. 52, no.4, p. 1163-1177 (23/03/2017). doi:10.1109/JSSC.2016.2645607. http://hdl.handle.net/2078.1/189108

69. Novo, C.; Bühler, R.; Giacomini, R.; Afzalian, Aryan; Flandre, Denis. Quantum Efficiency Improvement of SOI PIN Lateral Diodes Operating as UV Detectors at High Temperatures. In: IEEE Sensors Journal, Vol. PP, no.99, p. 8 (04/01/2017). doi:10.1109/JSEN.2017.2647848. http://hdl.handle.net/2078.1/181109

70. Aguirre, Javier; Bol, David; Flandre, Denis; Sanchez-Azqueta, Carlos; Celma, Santiago. A robust 10 Gbps duobinary transceiver in 0.13 μm SOI CMOS for short-haul optical networks. In: IEEE Transactions on Industrial Electronics, Vol. 99, p. 1 (2017). doi:10.1109/TIE.2017.2716870. http://hdl.handle.net/2078.1/191203

71. Haddad, Pierre-Antoine; Gosset, Geoffroy; Raskin, Jean-Pierre; Flandre, Denis. Automated Design of a 13.56 MHz 19µW Passive Rectifier With 72% Efficiency Under 10µA load. In: IEEE Journal of Solid State Circuits, Vol. 51, no.5, p. 12 (05/2015). doi:10.1109/JSSC.2016.2527714. http://hdl.handle.net/2078.1/173799

72. Pavanello, M.A.; de Souza, M.; Ribeiro, T.A.; Martino, J.A.; Flandre, Denis. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. In: Semiconductor Science and Technology, Vol. 31, no.11, p. 114005 (20/10/2016). doi:10.1088/0268-1242/31/11/114005. http://hdl.handle.net/2078.1/178174

73. Li, Guoli; André, Nicolas; Poncelet, Olivier; Gérard, Pierre; Ali, Syed Zeeshan; Udrea, Florin; Francis, Laurent; Zeng, Yun; Flandre, Denis. Silicon-on-Insulator Photodiode on Micro-Hotplate Platform with Improved Responsivity and High-Temperature Application. In: IEEE Sensors Journal, Vol. PP, no.99, p. 9 (15/02/2016). doi:10.1109/JSEN.2016.2530020. http://hdl.handle.net/2078.1/172562

74. Friedt, J.-M.; Francis, Laurent. Combined surface acoustic wave and surface plasmon resonance measurement of collagen and fibrinogen layer physical properties. In: Sensing and Bio-Sensing Research, Vol. 11, p. 60-70 (25/05/2016). doi:10.1016/j.sbsr.2016.05.007. http://hdl.handle.net/2078.1/182370

75. Sanchez-Azqueta, C.; Aguirre, J.; Gimeno Gasca, Cecilia; Aldea, C.; Celma, S. High-resolution wide-band LC-VCO for reliable operation in phase-locked loops. In: Microelectronics Reliability, Vol. 63, p. 251-255 (09/07/2016). doi:10.1016/j.microrel.2016.06.018. http://hdl.handle.net/2078.1/179094

76. Assalti, Rafael; Martins d'Oliveira, Ligia; Pavanello, Marcelo Antonio; Flandre, Denis; de Souza, Michelly. Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. In: IET Circuits, Devices and Systems, , p. 1-7 (11/12/2015). doi:10.1049/iet-cds.2015.0159. http://hdl.handle.net/2078.1/173537

77. Trevisoli, Renan; de Souza, Michelly; Trevisoli Doria, Rodrigo; Kilchytska, Valeriya; Flandre, Denis; Pavanello, Marcelo Antonio. Junctionless nanowire transistors operation at temperatures down to 4.2 K. In: Semiconductor Science and Technology, Vol. 31, no.11, p. 114001 (16/10/2016). doi:10.1088/0268-1242/31/11/114001. http://hdl.handle.net/2078.1/181126

78. Rudenko, Tamara; Nazarov, Alexei; Kilchytska, Valeriya; Flandre, Denis. A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling. In: Solid-State Electronics, Vol. 117, p. 66-76 (28/11/2015). doi:10.1016/j.sse.2015.11.017. http://hdl.handle.net/2078.1/169672

79. Kilchytska, Valeriya; Makovejev, Sergej; Barraud, S.; Poiroux, T.; Raskin, Jean-Pierre; Flandre, Denis. Trigate nanowire MOSFETs analog figures of merit. In: Solid-State Electronics, Vol. 112, p. 78-84 (24/02/2015). doi:10.1016/j.sse.2015.02.003. http://hdl.handle.net/2078.1/157073

80. Gimenez, Salvador Pinillos; Galembeck, Egon Henrique Salerno; Renaux, Christian; Flandre, Denis. Diamond layout style impact on SOI MOSFET in high temperature environment. In: Microelectronics Reliability, Vol. MR_11492, p. 6 (13/03/2015). doi:10.1016/j.microrel.2015.02.015. http://hdl.handle.net/2078.1/157744

81. Makovejev, Sergej; Kazemi Esfeh, Babak; Barral, V.; Planes, N.; Haond, M.; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications. In: Solid-State Electronics, , p. 6 (2015). doi:10.1016/j.sse.2014.12.007. http://hdl.handle.net/2078.1/157074

82. Al Kadi Jazairli, Mohamad; Flandre, Denis. A 65 nm CMOS Ultra-Low-Power Impulse Radio-Ultra-Wideband Emitter for Short-Range Indoor Localization. In: Journal of Low Power Electronics, Vol. 11, no.3, p. 349-358 (01/09/2015). doi:10.1166/jolpe.2015.1393. http://hdl.handle.net/2078.1/165608

83. Novo, Carla; Baptista, Joao; Guazzeli da Silveira, Marcilei; Giacomini, Renato; Afzalian, Aryan; Flandre, Denis. Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation. In: ECS transactions, Vol. 66, no.5, p. 101-107 (2015). doi:10.1149/06605.0101ecst. http://hdl.handle.net/2078.1/165032

84. de Souza, Michelly; Flandre, Denis; Trevisoli Doria, Rodrigo; Trevisoli, Renan; Pavanello, Marcelo Antonio. On the improvement of DC analog characteristics of FD SOI transistors by using asymmetric self-cascode configuration. In: Solid-State Electronics, Vol. 117, p. 152-160 (2/12/2015). doi:10.1016/j.sse.2015.11.018. http://hdl.handle.net/2078.1/169679

85. Makovejev, Sergej; Planes, N.; Haond, M.; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI. In: Solid-State Electronics, Vol. 115, p. 219-224 (2015). doi:10.1016/j.sse.2015.08.022. http://hdl.handle.net/2078.1/165207

86. Poncelet, Olivier; Tallier, Guillaume; Simonis, Priscilla; Cornet, Alain; Francis, Laurent. Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting. In: Bioinspiration & Biomimetics : learning from nature, Vol. 10, no.2, p. 1-10 (26/02/2015). doi:10.1088/1748-3182/10/2/026004. http://hdl.handle.net/2078.1/157196

87. N. de S. Fino, Leonardo; A. G. Silveira, Marcilei; Renaux, Christian; Flandre, Denis; Pinillos Gimenez, Salvador. The Influence of Back Gate Bias on the OCTO SOI MOSFET's Response to X-ray Radiation. In: Journal of Integrated Circuits and Systems, Vol. 10, no.1, p. 43-48 (2015). http://hdl.handle.net/2078.1/165201

88. Kotipalli, Raja Venkata Ratan; Vermang, Bart; Fjällström, Vikto; Edoff, Marika; Delamare, Romain; Flandre, Denis. Influence of Ga/(Ga + In) grading on deep-defect states of Cu(In,Ga)Se2 solar cells. In: Physica Status Solidi. Rapid Research Letters, , p. 4 (2015). doi:10.1002/pssr.201510024. http://hdl.handle.net/2078.1/156770

89. Kazemi Esfeh, Babak; Kilchytska, Valeriya; Barral, V.; Planes, N.; Haond, M.; Flandre, Denis; Raskin, Jean-Pierre. Assessment of 28nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements. In: Solid-State Electronics, Vol. 117, p. 130-137 (11/12/2015). doi:10.1016/j.sse.2015.11.020. http://hdl.handle.net/2078.1/169663

90. Couniot, Numa; Bol, David; Poncelet, Olivier; Francis, Laurent; Flandre, Denis. A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz. In: IEEE Transactions on Circuits and Systems. Part 2: Express Briefs, Vol. 62, no. 2, p. 159-163 (06/02/2015). doi:10.1109/TCSII.2014.2369111. http://hdl.handle.net/2078.1/152214

91. Kotipalli, Raja Venkata Ratan; Vermang, B.; Joel, J.; Jaiswar, Rajkumar Rampati; Edoff, M.; Flandre, Denis. Investigating the electronic properties of Al2O3/Cu(In, Ga)Se2 interface. In: A I P Advances, Vol. 5, no.107101, p. 6 (01/10/2015). doi:10.1063/1.4932512. http://hdl.handle.net/2078.1/165558

92. El Hamid, Hamdy Abd; Iniguez, Benjamin; Kilchytska, Valeriya; Flandre, Denis; Ismail, Yehea. An analytical 3D model for short-channel effects in undoped FinFETs. In: Journal of Computational Electronics, Vol. 14, no.2, p. 500-505 (02/2015). doi:10.1007/s10825-015-0678-0. http://hdl.handle.net/2078.1/164954

93. Navarenho de Souza Fino, Leonardo; Davini Neto, Enrico; Aparecida Guazzelli da Silveira, Marcilei; Renaux, Christian; Flandre, Denis; Pinillos Gimenez, Salvador. Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET. In: Semiconductor Science and Technology, Vol. 30, no.105024, p. 12 (07/09/2015). doi:10.1088/0268-1242/30/10/105024. http://hdl.handle.net/2078.1/165203

94. Couniot, Numa; de Streel, Guerric; Botman, François; Kuti Lusala, Angelo; Flandre, Denis; Bol, David. A 65 nm 0.5 V DPS CMOS Image Sensor With 17 pJ/Frame.Pixel and 42 dB Dynamic Range for Ultra-Low-Power SoCs. In: IEEE Journal of Solid State Circuits, Vol. 50, no. 10, p. 2419-2430 (10/2015). doi:10.1109/JSSC.2015.2457897. http://hdl.handle.net/2078.1/164957

95. Rocha-Gaso, Maria Isabel; Garcia, José-Vincente; Garcia, Pablo; March-Iborra, Carmen; Jiménez, Yolanda; Francis, Laurent; Montoya, Angel; Arnau, Antonio. Love Wave Immunosensor for the Detection of Carbaryl Pesticide. In: Sensors, Vol. 14, no.9, p. 16434-16453 (03/09/2014). doi:10.3390/s140916434. http://hdl.handle.net/2078.1/150819

96. Descamps, Pierre; Asad, Salman Syed; Kaiser, Vincent; Campeol, Frederik; Kuzma-Filipek, Izabela; Duerinckx, Filip; Szlufcik, Jozef; Flandre, Denis; Kotipalli, Raja Venkata Ratan; Delamare, Romain; Beaucarne, Guy. Deposition of a SiOx Film Showing Enhanced Surface Passivation. In: Energy Procedia, Vol. 55, p. 769–776 (2014). doi:10.1016/j.egypro.2014.08.058. http://hdl.handle.net/2078.1/152029

97. Garduno, Salvador I.; Alvarado Pulido, José Joaquin; Cerdeira, Antonio; Estrada, Magali; Kilchytska, Valeriya; Flandre, Denis. Gate leakage currents model for FinFETs implemented in Verilog-A for electronic circuits design. In: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, p. 15 (2014). doi:10.1002/jnm.1988 (Accepté/Sous presse). http://hdl.handle.net/2078.1/141233

98. Gimenez, Salvador Pinillos; Davini, Enrico; Peruzzi, Vinicius; Renaux, Christian; Flandre, Denis. Compact diamond MOSFET model accounting for PAMDLE applicable down 150nm node. In: Electronics Letters, Vol. 50, no. 22, p. 1618-1620 (23/10/2014). doi:10.1049/el.2014.1229. http://hdl.handle.net/2078.1/151730

99. Kilchytska, Valeriya; Alvarado Pulido, José Joaquin; Collaert, N.; Rooyakers, R.; Militaru, Otilia; Berger, G.; Flandre, Denis. Total-Dose Effects Caused by High-Energy Neutrons and y-Rays in Multiple-Gate FETs. In: IEEE Transactions on Nuclear Science, Vol. 57, no.4, p. 1764-1770 (08/2010). http://hdl.handle.net/2078.1/157249

100. Kamel, Dina; Renauld, Mathieu; Flandre, Denis; Standaert, François-Xavier. Understanding the limitations and improving the relevance of SPICE simulations in side-channel security evaluations. In: Journal of Cryptographic Engineering, , no.4, p. 1987-1995 (18/04/2014). doi:10.1007/S13389-014-0080-z. http://hdl.handle.net/2078.1/152051

101. De Vos, Julien; Flandre, Denis; Bol, David. A Sizing Methodology for On-Chip switched-Capacitor DC/DC Converters. In: IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 61, no.5, p. 15971606 (24/04/2014). doi:10.1109/TCSI.2013.2285692. http://hdl.handle.net/2078.1/145573

102. Couniot, Numa; Vanzieleghem, Thomas; Rasson, Jonathan; Van Overstraeten, Nancy; Poncelet, Olivier; Mahillon, Jacques; Francis, Laurent; Flandre, Denis. Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes. In: Biosensors and Bioelectronics, Vol. 67, p. 154-161 (7 août 2014). doi:10.1016/j.bios.2014.07.084. http://hdl.handle.net/2078.1/147283

103. Scheen, Gilles; Bassu, Margherita; Douchamps, Antoine; Zhang, Chao; Debliquy, Marc; Francis, Laurent. Palladium nanoparticles deposition via precipitation: a new method to functionalize macroporous silicon. In: Science and Technology of Advanced Materials, Vol. 15, no.065002, p. 11 (12/11/2014). doi:10.1088/1468-6996/15/6/065002. http://hdl.handle.net/2078.1/152879

104. El Hajjam, Khalil; Baboux, Nicolas; Calmon, Francis; Souifi, Abdelkader; Poncelet, Olivier; Francis, Laurent; Ecoffey, Serge; Drouin, Dominique. Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering. In: Journal of Vacuum Science and Technology. Part A. Vacuum, Surfaces and Films, Vol. 32, no.1, p. 01A132 - 01A132-6 (01/2014). doi:10.1116/1.4853075. http://hdl.handle.net/2078.1/140671

105. Botman, François; Bol, David; Legat, Jean-Didier; Roy, Kaushik. Data-Dependent Operation Speed-Up Through Automatically Inserted Signal Transition Detectors for Ultralow Voltage Logic Circuits. In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 22, no.12, p. 2561-2570 (12/2014). doi:10.1109/TVLSI.2013.2297176. http://hdl.handle.net/2078.1/156303

106. El Fissi, Lamia; Vandormael, Denis; Francis, Laurent. Direct assembly of cyclic olefin copolymer microfluidic devices helped by dry photoresist. In: Sensors and Actuators A: Physical : an international journal devoted to research and development of physical and chemical transducers, Vol. 223, p. 76-83 (19/12/2014). doi:10.1016/j.sna.2014.12.016. http://hdl.handle.net/2078.1/155638

107. Walewyns, Thomas; Spirito, David; Francis, Laurent. A Tunable Palladium-Based Capacitive MEMS Hydrogen Sensor Performing High Dynamics, High Selectivity and Ultra-Low Power Sensing. In: Procedia Engineering, Vol. 87, p. 268-271 (31/12/2014). doi:10.1016/j.proeng.2014.11.659. http://hdl.handle.net/2078.1/155153

108. Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Raja Venkata Ratan; Henry, Frederic; Flandre, Denis. Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells. In: Progress in Photovoltaics : research and applications, , p. 7 (02/07/2014). doi:10.1002/pip.2527. http://hdl.handle.net/2078.1/145698

109. Makovejev, Sergej; Kazemi Esfeh, Babak; Andrieu, François; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime. In: Journal of Low Power Electronics and Applications, Vol. 4, no. 3, p. 201-213 (06/07/2014). doi:10.3390/jlpea4030201. http://hdl.handle.net/2078.1/152031

110. Md Arshad, Mohd Khairuddin; Kilchytska, Valeriya; Emam, Mostafa; Andrieu, François; Flandre, Denis; Raskin, Jean-Pierre. Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit. In: Solid-State Electronics, , no.97, p. 38-44 (17/05/2014). doi:10.1016/j.sse.2014.04.027. http://hdl.handle.net/2078.1/144273

111. Druart, Sylvain; Flandre, Denis; Francis, Laurent. A Self-Oscillating System to Measure the Conductivity and the Permittivity of Liquids within a Single Triangular Signal. In: Journal of Sensors, Vol. 2014, no.389764, p. 11 (13/02/2014). doi:10.1155/2014/389764. http://hdl.handle.net/2078.1/140330

112. Bernard, Sébastien; Valentian, Alexandre; Bol, David; Legat, Jean-Didier; Belleville, Marc. A Robust and Energy Efficient Pulse-Triggered Flip-Flop Design for Ultra Low Voltage Operations. In: Journal of Low Power Electronics, Vol. 10, no. 1, p. 118-126 (2014). doi:10.1166/jolpe.2014.1303. http://hdl.handle.net/2078.1/152749

113. Novo, C.; Giacomini, R.; Doria, R.; Afzalian, Aryan; Flandre, Denis. Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures. In: Semiconductor Science and Technology, Vol. 29, no.075008, p. 9 (01/05/2014). doi:10.1088/0268-1242/29/7/075008. http://hdl.handle.net/2078.1/152043

114. Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Gunnarsson, Rickard; Pilch, Iris; Helmersson, Ulf; Kotipalli, Raja Venkata Ratan; Henry, Frederic; Flandre, Denis. Highly Reflective Rear Surface Passivation Design For Ultra-Thin Cu(In,Ga)Se² Solar Cells. In: Thin Solid Films, Vol. 582, p. 300-303 (2014). doi:10.1016/j.tsf.2014.10.050. http://hdl.handle.net/2078.1/152102

115. André, Nicolas; Rue, Bertrand; Scheen, Gilles; Flandre, Denis; Francis, Laurent; Raskin, Jean-Pierre. Out-of-plane MEMS-based mechanical airflow sensor co-integrated in SOI CMOS technology. In: Sensors and Actuators A: Physical, Vol. 206, p. 67-74 (16/11/2013). doi:10.1016/j.sna.2013.11.017. http://hdl.handle.net/2078.1/136019

116. Rudenko, Tamara; Md Arshad; Raskin, Jean-Pierre; Nazarov, Alexei; Flandre, Denis; Kilchytska, Valeriya. On the gm/ID-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs. In: Solid-State Electronics, , no.97, p. 52-58 (10/05/2014). doi:10.1016/j.sse.2014.04.029. http://hdl.handle.net/2078.1/144279

117. Barenghi, Alessandro; Hocquet, Cédric; Bol, David; Standaert, François-Xavier; Regazzoni, Francesco; Koren, Tsrael. A Combined Design-Time/Test-Time Study of the Vulnerability of Sub-Threshold Devices to Low Voltage Fault Attacks. In: IEEE Transactions on Emerging Topics in Computing, Vol. 2, no. 2, p. 107-118 (2014). doi:10.1109/TETC.2014.2316509. http://hdl.handle.net/2078.1/152586

118. de Streel, Guerric; Bol, David. Study of Back Biasing Schemes for ULV Logic from the Gate Level to the IP Level. In: Journal of Low Power Electronics and Applications, Vol. 4, no.3, p. 168-187 (07/07/2014). doi:10.3390/jlpea4030168. http://hdl.handle.net/2078.1/154424

119. Druart, Sylvain; Gillis, J.M.; Martin, J.M.; Flandre, Denis; Francis, Laurent. Detector of abrupt current variations on power lines. In: Electronics Letters, Vol. 49, no.14, p. 886-887 (2013). doi:10.1049/el.2013.1334. http://hdl.handle.net/2078.1/132943

120. Couniot, Numa; Flandre, Denis; Francis, Laurent; Afzalian, Aryan. Signal-to-noise ratio optimization for detecting bacteria with interdigitated microelectrodes. In: Sensors and Actuators B: Chemical : international journal devoted to research and development of physical and chemical transducers, p. 9 pages (2013). doi:10.1016/j.snb.2012.12.008. http://hdl.handle.net/2078.1/122621

121. Bouterfa, Mohamed; Alexandre, Geoffrey; Cortina Gil, Eduardo; Flandre, Denis. Charge collection mapping of a novel ultra-thin silicon strip detector for hardrontherapy beam monitoring. In: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, Vol. 732, p. 556-559 (2013). doi:10.1016/j.nima.2013.05.139. http://hdl.handle.net/2078.1/157071

122. Nemer, J.P.; de Souza, Michelly; Flandre, Denis; Pavanello, Marcelo Antonio. Analog Behavior of Submicron Graded-Channel SOI MOSFETs Varying the Channel Length, Doping Concentration and Temperature. In: ECS Transactions, Vol. 53, no.5, p. 149-154 (2013). doi:10.1149/05305.0149ecst. http://hdl.handle.net/2078.1/129215

123. Bay, Annick; André, Nicolas; Sarrazin, Michaël; Belarouci, Ali; Aimez, Vincent; Francis, Laurent; Vigneron, Jean-Pol. Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes. In: Optics Express, Vol. 21, no.S1, p. A179-A189 (08/01/2013). doi:10.1364/OE.21.00A179. http://hdl.handle.net/2078.1/123461

124. de Souza, Michelly; Cardoso Paz, Bruna; Flandre, Denis; Pavanello, Marcelo Antonio. Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. In: Microelectronics Reliability, p. 848-855 (06/04/2013). doi:10.1016/j.microrel.2013.03.005. http://hdl.handle.net/2078.1/127875

125. Bol, David; De Vos, Julien; Hocquet, Cédric; Botman, François; Boyd, Stephen P.; Flandre, Denis; Legat, Jean-Didier. SleepWalker: a 25-MHz 0.4-V sub-mm² 7-µW/MHz microcontroller in 65-nm LP/GP CMOS for low-carbon wireless sensor nodes. In: IEEE Journal of Solid State Circuits, Vol. vol. 48, no.no. 1, p. pp 20-32 (2013). doi:10.1109/JSSC.2012.2218067. http://hdl.handle.net/2078.1/129833

126. Pollissard, Guillaume; Gosset, Geoffroy; Flandre, Denis. A modified gm/ID design methodology for deeply scaled CMOS technologies. In: Analog Integrated Circuits and Signal Processing, Vol. 78, no.3, p. 771-784 (27/09/2013). doi:10.1007/s10470-013-0166-z. http://hdl.handle.net/2078.1/152047

127. Cerdeira, Antonio; Estrada, Magali; Alvarado Pulido, José Joaquin; Garduno, I.; Contreras, E.; Tinoco, J.; Iniguez, Benjamin; Kilchytska, Valeriya; Flandre, Denis. Review on double-gate MOSFETs and FinFETs modeling. In: Facta Universitatis. Series Electronics and Energetics, Vol. 26, no. 3, p. 197-213 (December 2013). doi:10.2298/FUEE1303197C. http://hdl.handle.net/2078.1/138582

128. Bouterfa, Mohamed; Flandre, Denis. Validation of a Novel ultra-thin silicon Strip Detector for Hadron Therapy beam monitoring. In: Journal of Circuits Systems and Computers, Vol. 22, no.9, p. 6 (05/11/2013). doi:10.1142/s0218126613400185. http://hdl.handle.net/2078.1/152054

129. Boufouss, El Hafed; Francis, Laurent; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis. Ultra-low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference. In: Sensors, Vol. 13, no. 12, p. 17265-17280 (13/12/2013). doi:10.3390/s131217265. http://hdl.handle.net/2078.1/135970

130. Kotipalli, Raja Venkata Ratan; Delamare, Romain; Poncelet, Olivier; Tang, Xiaohui; Francis, Laurent; Flandre, Denis. Passivation effects of atomic-layer-deposited aluminium oxide. In: E P J Photovoltaics, Vol. 4, no.45107, p. 1-8 (27/09/2013). doi:10.1051/epjpv/2013023. http://hdl.handle.net/2078.1/134098

131. Md Arshad; Makovejev, Sergej; Olsen, S.; Andrieu, F.; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime. In: Solid-State Electronics, (2013). doi:10.1016/j.sse.2013.02.051. http://hdl.handle.net/2078.1/130554

132. Tang, Xiaohui; Francis, Laurent; Gong, Longfei; Wang, Fengzhen; Raskin, Jean-Pierre; Flandre, Denis; Zhang, Shuai; You, Da; Wu, Liang; Dai, Bing. Characterization of high-efficiency multi-crystalline silicon in industrial production. In: Solar Energy Materials & Solar Cells, Vol. 117, p. 225-230 (10 June 2013). doi:10.1016/j.solmat.20313.06.013. http://hdl.handle.net/2078.1/131405

133. Garduῆo, S.I.; Cerdeira, Antonio; Estrada, Magali; Alvarado Pulido, José Joaquin; Kilchytska, Valeriya; Flandre, Denis. Improved modeling of gate leakage currents for fin-shaped field-effect transistors. In: Journal of Applied Physics, Vol. 113, no.124507, p. 124507/1-9 (28/03/2013). doi:10.1063/1.4795403. http://hdl.handle.net/2078.1/127808

134. Md Arshad, Mohd Khairuddin; Makovejev, Sergej; Olsen, Sarah H.; Andrieu, François; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetic double-gate regime. In: Solid-State Electronics, Vol. 90, p. 56-64 (2013). http://hdl.handle.net/2078.1/152078

135. Walewyns, Thomas; Reckinger, Nicolas; Ryelandt, Sophie; Pardoen, Thomas; Raskin, Jean-Pierre; Francis, Laurent. Polyimide as a versatile enabling material for microsystems fabrication: surface micromachining and electrodeposited nanowires integration. In: Journal of Micromechanics and Microengineering : structures, devices & systems, Vol. 23, no. 9, p. 12 (09/08/2013). doi:10.1088/0960-1317/23/9/095021. http://hdl.handle.net/2078.1/132898

136. Gimenez, Salvador Pinillos; Leoni, Renato D.; Renaux, Christian; Flandre, Denis. Using diamond layout style to boost MOSFET frequency response of analogue IC. In: Electronics Letters, Vol. ELL-2013-4038.R2, no. 50-5, p. 398-400 (2013). doi:10.1049/el.2013.4038. http://hdl.handle.net/2078.1/140302

137. Makovejev, Sergej; Olsen, S.H.; Kilchytska, Valeriya; Raskin, Jean-Pierre. Time and Frequency Domain Characterization of Transistor Self-Heating. In: IEEE Transactions on Electron Devices, Vol. 60, no.6, p. 1844-1851 (06/2013). doi:10.1109/TED.2013.2259174. http://hdl.handle.net/2078.1/140976

138. Rudenko, Tamara; Nazarov, Alexei; Kilchytska, Valeriya; Flandre, Denis; Popov, V.; Ilnitsky, M.; Lysenko, V. Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs. In: Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol. 16, no.3, p. 300-309 (30/09/2013). http://hdl.handle.net/2078.1/152076

139. Lumentut, Mikail F.; Francis, Laurent; Howard, Ian M. Analytical Techniques for Broadband Multielectromechanical Piezoelectric Bimorph Beams with Multifrequency Power Harvesting. In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Vol. 59, no.11, p. 2555-2568 (Novembre 2012). doi:10.1109/TUFFC.2012.2489. http://hdl.handle.net/2078.1/118622

140. De Vos, Julien; Flandre, Denis; Bol, David. Pushing Adaptive Voltage Scaling Fully On Chip. In: Journal of Low Power Electronics, Vol. 8, no. 1, p. 95-105 (February 2012). doi:10.1166/jolpe.2012.1175. http://hdl.handle.net/2078.1/107586

141. Kamel, Dina; Renauld, Mathieu; Bol, David; Standaert, François-Xavier; Flandre, Denis. Analysis of Dynamic Differential Swing Limited Logic for Low-Power Secure Applications. In: Journal of Low Power Electronics and Applications, Vol. 2, no.1, p. 98-126 (16/03/2012). doi:10.3390/jlpea2010098. http://hdl.handle.net/2078.1/115608

142. Arshad, M.K.M.; Raskin, Jean-Pierre; Kilchytska, Valeriya; Andrieu, Francois; Scheiblin, P.; Faynot, O.; Flandre, Denis. Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs. In: IEEE Transactions on Electron Devices, Vol. 59, no. 1 (article n°6085605), p. 247-251 (01/2012). doi:10.1109/TED.2011.2172993. http://hdl.handle.net/2078.1/115318

143. Makovejev, Sergej; Raskin, Jean-Pierre; Md Arshad, Mohd Khairuddin; Flandre, Denis; Olsen, S.; Andrieu, F.; Kilchytska, Valeriya. Impact of self-heating and substrate effects on small-signal output conductance in UTBB SOI MOSFETs. In: Solid-State Electronics, Vol. 71, p. 93-100 (Mai 2012). doi:10.1016/j.sse.2011.10.027. http://hdl.handle.net/2078.1/115004

144. André, Nicolas; Druart, Sylvain; Dupuis, Pascal; Rue, Bertrand; Gérard, Pierre; Flandre, Denis; Raskin, Jean-Pierre; Francis, Laurent. Dew-based wireless mini module for respiratory rate monitoring. In: IEEE Sensors Journal, Vol. 12, no.3, p. 699-706 (03/2012). doi:10.1109/JSEN.2011.2161668. http://hdl.handle.net/2078.1/115019

145. Peruzzi, V.V.; Renaux, Christian; Flandre, Denis; Gimenez, S.P. Experimental Validation of the Drain Current Analytical Model of the Fully Depleted Diamond SOI nMOSFETs by Using Paired T-test Statistical Evaluation. In: ECS Transactions, Vol. 49, no.1, p. 169-176 (2012). doi:10.1149/04901.0169ECST. http://hdl.handle.net/2078.1/129573

146. Bassu, Margherita; Scheen, Gilles; Francis, Laurent. Thick Macroporous Silicon Membranes: Influence of the Masking Layer on the Underetching Characteristics. In: Sensors and Actuators A: Physical : an international journal devoted to research and development of physical and chemical transducers, Vol. 185, p. 66-72 (29/08/2012). doi:10.1016/j.sna.2012.06.019. http://hdl.handle.net/2078.1/114312

147. Afzalian, Aryan; Flandre, Denis. Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires. In: IEEE Electron Device Letters, Vol. 33, no.9, p. 1228-1230 (21/08/2012). doi:10.1109/LED.2012.2203350. http://hdl.handle.net/2078.1/114318

148. Assaad, Maher; Boufouss, El Hafed; Gérard, Pierre; Francis, Laurent; Flandre, Denis. Design and characterization of ultra-low-power SOI-CMOS IC temperature level detector. In: Electronics Letters, Vol. 48, no. 14, p. 842-844 (5 July 2012). doi:10.1049/el.2012.1279. http://hdl.handle.net/2078.1/112761

149. Lugo-Muñoz; Muci, J.; Ortiz-Conde, A.; García-Sánchez, F.J.; de Souza, Michelly; Flandre, Denis; Pavanello, Marcelo Antonio. Modeling of Thin-Film Lateral SOI PIN Diodes with an Alternative Multi-Branch Explicit Current Model. In: Journal of Integrated Circuits and Systems, Vol. 7, no. 1, p. 92-99 (2012). http://hdl.handle.net/2078.1/129205

150. Scheen, Gilles; Bassu, Margherita; Francis, Laurent. Metal electrodes integration on macroporous silicon: pores distribution and morphology. In: Nanoscale Research Letters, Vol. 7, no. 395 (16/07/2012). doi:10.1186/1556-276X-7-395. http://hdl.handle.net/2078.1/124410

151. Tang, Xiaohui; Francis, Laurent; Simonis, P.; Haslinger, Michaël; Delamare, Romain; Deschaume, Olivier; Flandre, Denis; Defrance, Pierre; Jonas, Alain M.; Vigneron, Jean-Pol; Raskin, Jean-Pierre. Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application.. In: Journal of Vacuum Science and Technology. Part A. Vacuum, Surfaces and Films, Vol. 30, no. 1, p. 01A146 (Janvier 2012). doi:10.1116/1.3669521. http://hdl.handle.net/2078.1/97167

152. Kilchytska, Valeriya; Alvarado, Jose Joaquin; Put, S.; Collaert, N.; Simoen, E.; Claeys, C.; Militaru, Otilia; Berger, Guy; Flandre, Denis. High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. In: Microelectronics Reliability, Vol. 52, no. 1, p. 118-123 (2012). doi:10.1016/j.microrel.2011.08.001. http://hdl.handle.net/2078.1/86608

153. Haddad, Pierre-Antoine; Gosset, Geoffroy; Flandre, Denis. Design of an Ultra-Low-Power multi-stage AC/DC voltage rectifier and multiplier using a fully-automated and portable design methodology. In: Journal of Low Power Electronics, Vol. 8, no.2, p. 197-206 (2012). doi:10.1166/jolpe.2012.1184. http://hdl.handle.net/2078.1/114691

154. Gkotsis, Petros; Kilchytska, Valeriya; Fragkiadakis, Charalampos; Kirby, Paul B.; Raskin, Jean-Pierre; Francis, Laurent. Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems. In: IEEE Journal of Microelectromechanical Systems, Vol. 21, no.6, p. 1471-1483 (Décembre 2012). doi:10.1109/JMEMS.2012.2211578. http://hdl.handle.net/2078.1/118621

155. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. A SDM-TDM-Based Circuit-Switched Router for On-Chip Networks. In: ACM Transactions on Reconfigurable Technology and Systems, Vol. 5, no.3, p. 15-22 (October 2012). http://hdl.handle.net/2078.1/117481

156. Alvarado Pulido, José Joaquin; Kilchytska, Valeriya; Boufouss, El Hafed; Soto-Cruz, B.S.; Flandre, Denis. A compact model for single event effects in PD SOI sub-micron MOSFETs. In: IEEE Transactions on Nuclear Science, Vol. 59, no. 4, p. 943-949 (14/08/2012). doi:10.1109/TNS.2012.2201957. http://hdl.handle.net/2078.1/114337

157. Bol, David; Hocquet, Cédric; Regazzoni, Francesco. A Fast ULV Logic Synthesis Flow in Many-Vt CMOS Processes for Minimum Energy Under Timing Constraints. In: IEEE Transactions on Circuits and Systems. Part 2: Express Briefs, Vol. 59, no. 12, p. 947-951 (2012). doi:10.1109/TCSII.2012.2231034. http://hdl.handle.net/2078.1/125016

158. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. Combining SDM-Based Circuit Switching with Packet Switching in a Router for On-Chip Networks. In: International Journal of Reconfigurable Computing, Vol. vol. 2012, no. Article ID 474765, p. 16 pages (2012). doi:10.1155/2012/474765. http://hdl.handle.net/2078.1/104924

159. Walewyns, Thomas; Scheen, Gilles; Tooten, Ester; Dupuis, Pascal; Francis, Laurent. Development of miniaturized gas ionization sensor for harsh environments by using polyimide spacer. In: ECS Transactions, Vol. 35, no. 30, p. 119-128 (2011). http://hdl.handle.net/2078.1/112938

160. Tang, Xiaohui; Krzeminski, Christophe; Lecavalier des Etangs-Levallois, Aurélien; Chen, Zhenkun; Dubois, Emmanuel; Kasper, Erich; Karmous, Alim; Reckinger, Nicolas; Flandre, Denis; Francis, Laurent; Colinge, Jean-Pierre; Raskin, Jean-Pierre. Energy-Band Engineering for Improved Charge Retention in Fully Self-Aligned Double Floating-Gate Single-Electron Memories. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 11, no. 11, p. 4520-4526 (3 octobre 2011). doi:10.1021/nl202434k. http://hdl.handle.net/2078.1/93789

161. Olbrechts, Benoit; Rue, Bertrand; Pardoen, Thomas; Flandre, Denis; Raskin, Jean-Pierre. Routes towards novel active pressure sensors in SOI technology. In: Advanced Materials Research, Vol. 276, no. -, pp. 145-155 (July 2011). doi:10.4028/www.scientific.net/AMR.276.145. http://hdl.handle.net/2078.1/87113

162. Rudenko, Tamara; Kilchytska, Valeriya; Arshad, M.K.M.; Raskin, Jean-Pierre; Nazarov, A.; Flandre, Denis. On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility. In: IEEE Transactions on Electron Devices, no. 99, p. 1-8 (14 octobre 2011). doi:10.1109/TED.2011.2168226. http://hdl.handle.net/2078.1/91507

163. Garduno, S.I.; Cerdeira, A.; Estrada, M.; Alvarado, Jose Joaquin; Kilchytska, Valeriya; Flandre, Denis. Contribution of carrier tunneling and gate induced drain leakage effects to the gate and drain currents of fin-shaped field-effect transistors. In: Journal of Applied Physics, Vol. 109, no. 8 (15 avril 2011). doi:10.1063/1.3575324. http://hdl.handle.net/2078.1/86363

164. Yedji, Mourad; Demarche, Julien; Terwagne, Guy; Delamare, Romain; Flandre, Denis; Barba, D.; Koshel, D.; Ross, G.G. Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2. In: Journal of Applied Physics, Vol. 109, no. 8, p. 6 pages (15 avril 2011). doi:10.1063/1.3575325. http://hdl.handle.net/2078.1/86364

165. de Souza, Michelly; Bulteel, Olivier; Flandre, Denis; Pavanello, Marcelo Antonio. Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths. In: Journal of Integrated Circuits and Systems, Vol. 6, no. 1, p. 107-113 (2011). http://hdl.handle.net/2078.1/93800

166. Tang, Xiaohui; Flandre, Denis; Raskin, Jean-Pierre; Nizet, Yannick; Moreno Hagelsieb, Luis; Pampin, Rémi; Francis, Laurent. A new interdigitated array microelectrode-oxide-silicon sensor with label-free, high sensitivity and specificity for fast bacteria detection. In: Sensors and Actuators B: Chemical, Vol. 156, no. 2, p. 578-587 (2011). doi:10.1016/j.snb.2011.02.002. http://hdl.handle.net/2078.1/85978

167. Rudenko, Tamara; Kilchytska, Valeriya; Arshad, M.K.; Raskin, Jean-Pierre; Nazarov, Alexei; Flandre, Denis. On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage. In: IEEE Transactions on Electron Devices, Vol. 99, p. 1-9 (2011). doi:10.1109/TED.2011.2168227. http://hdl.handle.net/2078.1/92334

168. Hocquet, Cédric; Kamel, Dina; Regazzoni, Francesco; Legat, Jean-Didier; Flandre, Denis; Bol, David; Standaert, François-Xavier. Harvesting the potential of nano-CMOS for lightweight cryptography: An ultra-low-voltage 65 nm AES coprocessor for passive RFID tags. In: Journal of Cryptographic Engineering, Vol. 1, no. 1, p. 79-86 (Février 2011). doi:10.1007/s13389-011-0005-z. http://hdl.handle.net/2078.1/87835

169. André, Nicolas; Rue, Bertrand; Scheen, Gilles; Francis, Laurent; Flandre, Denis; Raskin, Jean-Pierre. Ultra Low Power 3-D Flow Meter in Monolithic SOI Technology. In: Electrochemical Society. Transactions, Vol. 35, no. 5, p. 319-324 (May 6, 2011). doi:10.1149/1.3570812. http://hdl.handle.net/2078.1/87132

170. Roda Neve, Cesar; Kilchytska, Valeriya; Alvarado, Jose Joaquin; Lederer, Dimitri; Militaru, Otilia; Flandre, Denis; Raskin, Jean-Pierre. Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. In: Microelectronics Reliability, Vol. 51, no. 2, p. 326-331 (Février 2011). doi:10.1016/j.microel.2010.07.153. http://hdl.handle.net/2078.1/86401

171. Afzalian, Aryan; Flandre, Denis. Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs. In: Solid-State Electronics, Vol. 65-66, no. 1, p. 123-129 (November-December 2011). doi:10.1016/j.sse.2011.06.017. http://hdl.handle.net/2078.1/86605

172. Olbrechts, Benoit; Rue, Bertrand; Pardoen, Thomas; Flandre, Denis; Raskin, Jean-Pierre. A novel Approach for Active Pressure Sensors in Thin Film SOI Technology. In: Procedia Engineering, Vol. 25, p. 43-46 (2011). doi:10.1016/j.proeng.2011.12.011. http://hdl.handle.net/2078.1/107133

173. Conde; Cerdeira; Pavanello; Kilchytska, Valeriya; Flandre, Denis. 3D simulation of triple-gate MOSFETs with different mobility regions. In: Microelectronic Engineering, Vol. 88, no. 7, p. 1633-1636 (Juillet 2011). doi:10.1016/j.mee.2011.03.013. http://hdl.handle.net/2078.1/86005

174. Kilchytska, Valeriya; Alvarado, Joaquin; Collaert, N.; Rooyackers, R.; Put, S.; Simoen, E.; Claeys, C.; Flandre, Denis. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs. In: Solid-State Electronics, Vol. 59, no. 1, p. 50-61 (Mai 2011). doi:10.1016/j.sse.2011.01.008. http://hdl.handle.net/2078.1/106058

175. Cortina Gil, Eduardo; Soung Yee, Lawrence; Renaux, Christian; Flandre, Denis; Martin-Albarran, Maria-Elena. TRAPPISTe pixel sensor with 2 µm SOI technology. In: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, Vol. 663, p. 19-21. doi:10.1016/j.nima.2010.06.109. http://hdl.handle.net/2078.1/86157

176. Kilchytska, Valeriya; Alvarado, Joaquin; Militaru, Otilia; Berger, Guy; Flandre, Denis. Effects of high-energy neutrons on advanced SOI MOSFETs. In: Advanced Materials Research, Vol. 276, no. 276.95, p. 95-105 (09/06/2011). doi:10.4028/www.scientific.net/AMR.276.95. http://hdl.handle.net/2078.1/85000

177. Carta, R.; Thoné, J.; Gosset, Geoffroy; Cogels, G.; Flandre, Denis; Puers, R. A self-tuning inductive powering system for biomedical implants. In: Procedia Engineering, Vol. 25, p. 1585-1588 (31/12/2011). doi:10.1016/j.proeng.2011.12.392. http://hdl.handle.net/2078.1/129363

178. Reckinger, Nicolas; Tang, Xiaohui; Dubois, Emmanuel; Larrieu, Guilhem; Flandre, Denis; Raskin, Jean-Pierre; Afzalian, Aryan. Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width. In: Applied Physics Letters, Vol. 98, no. 11, p. 112102 (16 March 2011). doi:10.1063/1.3567546. http://hdl.handle.net/2078.1/70970

179. Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis. Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current. In: Solid-State Electronics, Vol. 59, no. 1, p. 50-61 (Mai 2011). doi:10.1016/j.sse.2011.01.016. http://hdl.handle.net/2078.1/86251

180. Alvarado, Jose Joaquin; Kilchytska, Valeriya; Boufouss, El Hafed; Flandre, Denis. Characterization and modelling of single event transients in LDMOS-SOI FETs. In: Microelectronics Reliability, Vol. 51, no. 9-11, p. 2004–2009 (Septembre–Novembre 2011). doi:10.1016/j.microrel.2011.07.082. http://hdl.handle.net/2078.1/86600

181. Afzalian, Aryan. Computationally Efficient self-consistent Born approximation treatments of phonon scattering for Coupled-Mode Space Non-Equilibrium Green's Functions. In: Journal of Applied Physics, Vol. 110, no.094517, p. 094517-1-11 (11 November 2011). doi:10.1063/1.3658809. http://hdl.handle.net/2078.1/122803

182. Gosset, Geoffroy; Flandre, Denis. Fully-Automated and Portable Design Methodology for Optimal Sizing of Energy-Efficient CMOS Voltage Rectifiers. In: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, Vol. 1, no. 2, p. 141-149 (Juillet 2011). doi:10.1109/JETCAS.2011.2158357. http://hdl.handle.net/2078.1/86381

183. Afzalian, Aryan; Lee, Chi-Woo; Dehdashti Akhavan, Nima; Yan, Ran; Ferain, Isabelle; Colinge, Jean-Pierre. Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs. In: IEEE Transactions on Nanotechnology, Vol. 10, no.2, p. 300-309 (March 2011). doi:10.1109/TNANO.2009.2039800. http://hdl.handle.net/2078.1/119194

184. Bol, David. Robust and Energy-Efficient Ultra-Low-Voltage Circuit Design under Timing Constraints in 65/45 nm CMOS. In: Journal of Low Power Electronics and Applications, Vol. 1, no. 1, p. 1-19 (25/01/2011). doi:10.3390/jlpea1010001. http://hdl.handle.net/2078.1/85059

185. Gkotsis, Petros; Kilchytska, Valeriya; Bhaskar, Umesh Kumar; Militaru, Otilia; Tang, Xiaohui; Fragkiadakis, C.; Kirby, P.B.; Raskin, Jean-Pierre; Flandre, Denis; Francis, Laurent. Neutron and gamma radiation effects on MEMS structures. In: Procedia Engineering, Vol. 25, pp. 172-175 (2011). doi:10.1016/j.proeng.2011.12.043. http://hdl.handle.net/2078/118746

186. de Souza, Michelly; Rue, Bertrand; Flandre, Denis; Pavanello, Marcello. Thin-Film Lateral SOI PIN Diodes for Thermal Sensing Reaching the Cryogenic Regime. In: Journal of Integrated Circuits and Systems, Vol. 5, no. 2, p. 160-167 (2010). http://hdl.handle.net/2078.1/88070

187. Bawedin, Maryline; Cristoloveanu, Sorin; Flandre, Denis. Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications. In: Solid-State Electronics, Vol. 54, no. 2, p. 104-114 (2010). doi:10.1016/j.sse.2009.12.004. http://hdl.handle.net/2078.1/87990

188. Lee, Chi-Woo; Borne, Adrien; Ferain, Isabelle; Afzalian, Aryan; Yan, Ran; Dehdashti, Nima; Colinge, Jean-Pierre. High-Temperature Performance of Silicon Junctionless MOSFETs. In: IEEE Transactions on Electron Devices, Vol. 57, no.03, p. 620-625 (24/02/2010). doi:10.1109/TED.2009.2039093. http://hdl.handle.net/2078.1/120423

189. André, Nicolas; Druart, Sylvain; Gérard, Pierre; Pampin, Rémi; Moreno Hagelsieb, Luis; Kezai, Tahar; Francis, Laurent; Flandre, Denis; Raskin, Jean-Pierre. Miniaturized wireless sensing system for real-time breath activity recording. In: IEEE Sensors Journal, Vol. 10, no.1, p. 178-184 (01/2010). doi:10.1109/JSEN.2009.2035666. http://hdl.handle.net/2078.1/116292

190. Simoen, E.; Put, S.; Claeys, C.; Kilchytska, Valeriya; Alvarado Pulido, José Joaquin; Flandre, Denis. Study of neutron irradiation effects on SOI and strained SOI MuGFETs assessed by low-frequency noise. In: ECS Transactions, Vol. 31, no. 1, p. 43-50 (2010). doi:10.1149/1.3474140. http://hdl.handle.net/2078.1/88050

191. Colinge, Jean-Pierre; Lee, Chi-Woo; Afzalian, Aryan; Dehdashti Akhavan, Nima; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; O'Neill, Brendan; Blake, Alan; White, Mary; Kelleher, Anne-Marie; McCarthy, Brendan; Murphy, Richard. Nanowire transistors without junctions. In: Nature Nanotechnology, Vol. 5, no.3, p. 225-229 (18/01/2010). doi:10.1038/NNANO.2010.15. http://hdl.handle.net/2078.1/120442

192. Hassoune, Ilham; Flandre, Denis; O'Connor, Ian; Legat, Jean-Didier. ULPFA: A New Efficient Design of a Power-Aware Full Adder. In: IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 57, no. 8, p. 2066-2074 (2010). doi:10.1109/TCSI.2008.2001367. http://hdl.handle.net/2078.1/35012

193. Passi, Vikram; Lecestre, Aurélie; Krzeminski, Christophe; Larrieu, Guilhem; Dubois, Emmanuel; Raskin, Jean-Pierre. A single layer hydrogen silsesquioxane based lift-off process for germanium and platinum. In: Microelectronic Engineering, Vol. 87, no. 10, p. 1872-1878 (October 2010). doi:10.1016/j.mee.2009.11.022. http://hdl.handle.net/2078.1/85541

194. Bulteel, Olivier; Afzalian, Aryan; Flandre, Denis. Fully integrated blue/UV SOI CMOS photosensor for biomedical and environmental applications. In: Analog Integrated Circuits and Signal Processing, Vol. 65, no. 3, p. 399-405 (2010). doi:10.1007/s10470-009-9402-y. http://hdl.handle.net/2078.1/88393

195. Dupuis, Pascal; André, Nicolas; Gérard, Pierre; Flandre, Denis; Raskin, Jean-Pierre; Francis, Laurent. A fast and robust algorithm to assess respiratory frequency in real-time. In: Procedia Engineering, Vol. 5, p. 576-579 (2010). doi:10.1016/j.proeng.2010.09.175. http://hdl.handle.net/2078.1/87126

196. André, Nicolas; Rue, Bertrand; Van Vynckt, D.; Francis, Laurent; Flandre, Denis; Raskin, Jean-Pierre. Ultra Low Power flow-to-frequency SOI MEMS transducer. In: Procedia Engineering, Vol. 5, p. 540-543 (2010). doi:10.1016/j.proeng.2010.09.166. http://hdl.handle.net/2078.1/87125

197. Flandre, Denis; Kilchytska, Valeriya; Rudenko, Tamara. Gm/Id Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs with nonlinear behavior above threshold. In: IEEE Electron Device Letters, Vol. 31, no.9, p. 930-932 (09/2010). doi:10.1109/LED.2010.2055829. http://hdl.handle.net/2078.1/130501

198. Lee, Chi-Woo; Afzalian, Aryan; Ferain, Isabelle; Yan, Ran; Dehdashti Akhavan, Nima; Xiong, Weize; Colinge, Jean-Pierre. Influence of gate misalignment on the electrical characteristics of MuGFETs. In: Solid-State Electronics, Vol. 54, no.3, p. 226-230 (8/09/2009). doi:10.1016/j.sse.2009.09.001. http://hdl.handle.net/2078.1/120418

199. Lambert, Richard; De Toffoli, Marc; Dufrasne, Isabelle; Hornick, Jean-Luc; Stilmant, Didier; Seutin, Yves. Towards a revison of the dairy cow's standard for nitrogen production: justification and what are consequences for soil link rate of dairy farms. In: Biotechnologie, Agronomie, Société et Environnement, Vol. 14, p. 67-71 (2010). http://hdl.handle.net/2078.1/35101

200. Yan, Ran; Duane, Russell; Razavi, Pedram; Afzalian, Aryan; Ferain, Isabelle; Lee, Chi-Woo; Dehdashti Akhavan, Nima; Nguyeb, Bich-Yen; Bourdelle, Konstantin K.; Colinge, Jean-Pierre. LDD and Back-Gate Engineering for Fully Depleted Planar SOI Transistors with Thin Buried Oxide. In: IEEE Transactions on Electron Devices, Vol. 57, no.6, p. 1319-1326 (19/05/2010). doi:10.1109/TED.2010.2046097. http://hdl.handle.net/2078.1/120450

201. Lugo-Munoz, Denise; de Souza, Michelly; Pavanello, Marcello; Flandre, Denis; Muci, Juan; Ortiz-Conde, Adelmo; Garcia Sanchez, F.J. Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting. In: ECS Transactions, Vol. 31, no. 1, p. 369-376 (2010). http://hdl.handle.net/2078.1/88006

202. Dehdashti Akhavan, Nima; Afzalian, Aryan; Lee, Chi-Woo; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; Fagas, Giorgios; Colinge, Jean-Pierre. Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs. In: IEEE Transactions on Electron Devices, Vol. 57, no.5, p. 1102-1109 (21/04/2010). doi:10.1109/TED.2010.2044295. http://hdl.handle.net/2078.1/120454

203. Alvarado, Joaquin; Flandre, Denis; Boufouss, El Hafed; Kilchytska, Valeriya. Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. In: Microelectronics Reliability, Vol. 50, no. 9-11, p. 1852-1856 (2010). doi:10.1016/j.microrel.2010.07.040. http://hdl.handle.net/2078.1/58793

204. de Souza, Michelly; Bulteel, Olivier; Flandre, Denis; Pavanello, Marcello. Analysis of Lateral SOI PIN Diodes for the Detection of Blue and UV Wavelengths in a Wide Temperature Range. In: ECS Transactions, Vol. 31, no. 1, p. 199-206 (2010). http://hdl.handle.net/2078.1/87977

205. Bol, David; Flandre, Denis; Legat, Jean-Didier. Nanometer MOSFET Effects on the Minimum-Energy Point of Sub-45nm Subthreshold Logic-Mitigation at Technology and Circuit Levels. In: ACM Transactions on Design Automation of Electronic Systems, Vol. 16, no. 1, p. 26 pages (2010). doi:10.1145/1870109.1870111. http://hdl.handle.net/2078.1/88000

Patents

1. Xu, Pengcheng; Bol, David; Flandre, Denis. Energy harvesting system. http://hdl.handle.net/2078.1/283160 http://hdl.handle.net/2078.1/283160

2. Roisin, Nicolas; Flandre, Denis; André, Nicolas; Delhaye, Thibault. Strain sensor. http://hdl.handle.net/2078.1/283157 http://hdl.handle.net/2078.1/283157

3. Bawedin, Maryline; Cristoloveanu, Sorin Ioan; Flandre, Denis; Renaux, Christian; Crahay, André. Double-gate floating-body memory device. http://hdl.handle.net/2078.1/156322 http://hdl.handle.net/2078.1/156322

4. Proost, Joris; Santoro, Ronny; Soumillion, Patrice; Flandre, Denis; Deschuyteneer, Geneviève. Genetically modified bacteriophage, biosensor containing same, and method of use. http://hdl.handle.net/2078.1/87254 http://hdl.handle.net/2078.1/87254

5. Bol, David; Flandre, Denis; Legat, Jean-Didier. Ultra-low-power circuits. http://hdl.handle.net/2078.1/129918 http://hdl.handle.net/2078.1/129918

6. Afzalian, Aryan; Colinge, Jean-Pierre. WO/2010/115856 Variable Barrier Tunnel Transistor. http://hdl.handle.net/2078.1/122904 http://hdl.handle.net/2078.1/122904

7. Gosset, Geoffroy; Flandre, Denis; Delmée, Gilles; Rue, Bertrand. Network architecture for wirelessly interfacing sensors at ultra low power. http://hdl.handle.net/2078.1/156324 http://hdl.handle.net/2078.1/156324

8. Afzalian, Aryan; Colinge, Jean-Pierre. WO/2010/009873 Tunnel Nanowire Transistor. http://hdl.handle.net/2078.1/122887 http://hdl.handle.net/2078.1/122887

Conference Papers

1. Lefebvre, Martin; Bol, David. A Mixed-Signal Near-Sensor Convolutional Imager SoC with Charge-Based 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection. In: Proceedings of the 2024 IEEE Custom Integrated Circuits Conference (CICC). p. 1-2. Institute of Electrical and Electronics Engineers (IEEE), 2024 xxx. doi:10.1109/CICC60959.2024.10528961. http://hdl.handle.net/2078.1/287450

2. Golard, Louis; Agram, Youssef; Rottenberg, François; Quitin, François; Bol, David; Louveaux, Jérôme. A Parametric Power Model of Multi-Band Sub-6 GHz Cellular Base Stations Using On-Site Measurements. In: IEEE International Symposium Personal, Indoor and Mobile Radio Communications. (2024). I E E E, 2024 xxx. http://hdl.handle.net/2078.1/289070

3. Chen, Qi; Flandre, Denis. TCAD Simulation Study on P-type Source-gated CuO TFTs. 2023 xxx. http://hdl.handle.net/2078.1/281173

4. Bidoul, Noémie; Huet, Benjamin; Ureña Begara, Ferran; Raskin, Jean-Pierre; Flandre, Denis. Tuning the stochasticity of VO2 neurons firing-threshold through grain size engineering. In: Proceedings of Neuromorphic Materials, Devices, Circuits and Systems, 2023, p. 050 xxx. doi:10.29363/nanoge.neumatdecas.2023.050. http://hdl.handle.net/2078.1/272256

5. Chen, Qi; Zeng, Xi; Flandre, Denis. Impact of passivation layer on the subthreshold behavior of p-type CuO accumulation-mode thin-film transistors. 2023 xxx. http://hdl.handle.net/2078.1/281169

6. Chouaibi, Sana; Said, Mohammed Hadj; Nasr, Dorra; Ayed, Mossaad Ben; Flandre, Denis; Tounsi, Fares. Mutual Inductance Evaluation Between Two Parallel Conductors on a PCB. In: 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2023, 979-8-3503-2649-9 xxx. doi:10.1109/ICECS58634.2023.10382803. http://hdl.handle.net/2078.1/287694

7. Golard, Louis; Bol, David; Louveaux, Jérôme. A Configurable RAN Model to Evaluate and Reduce its Power Consumption and Carbon Footprint. 2023 xxx. http://hdl.handle.net/2078.1/278543

8. Van Brandt, Léopold; Vercauteren, Roselien; Haya Enriquez, Diego; André, Nicolas; Kilchytska, Valeriya; Flandre, Denis; Delvenne, Jean-Charles. Variance and Skewness of Current Fluctuations Experimentally Evidenced in Single-Photon Avalanche Diodes. In: 2023 International Conference on Noise and Fluctuations (ICNF), 2023, 979-8-3503-3011-3 xxx. doi:10.1109/ICNF57520.2023.10472747. http://hdl.handle.net/2078.1/287699

9. Bidoul, Noémie; Rosca, Teodor; Ionescu, Adrian M.; Flandre, Denis. Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron. In: 53rd European Solid-State Device Research Conference (ESSDERC), 2023, 979-8-3503-0424-4 xxx. doi:10.1109/ESSDERC59256.2023.10268509. http://hdl.handle.net/2078.1/283155

10. Parion, Jonathan; Scaffidi, Romain; Flandre, Denis; Brammertz, Guy; Vermang, Bart. Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)2 thin-film solar cells. In: IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, 2023, 978-1-6654-6398-0 xxx. doi:10.1109/EUROCON56442.2023.10199008. http://hdl.handle.net/2078.1/283161

11. Yildirim, Hasan Can; Storrer, Laurent; Louveaux, Jérôme; De Doncker, Philippe; Horlin, François. Impact of MU-MIMO on Passive Wi-Fi Sensing: Threat or Opportunity?. I E E E, 2022 xxx. http://hdl.handle.net/2078.1/265278

12. Storrer, Laurent; Yildirim, Hasan Can; Louveaux, Jérôme; De Doncker, Philippe; Pollin, Sophie; Horlin, François. Impact of Inter-body Scattering on People Counting with Wi-Fi Sensing. 2022 xxx. http://hdl.handle.net/2078.1/265277

13. Steaven V. Chede, Akpaki; Dossou, Michel; Louveaux, Jérôme. Joint Transmission-Sensing Framework Using Changepoint Detection. 2022 xxx. http://hdl.handle.net/2078.1/265279

14. Lefebvre, Martin; Flandre, Denis; Bol, David. A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOI. In: Proceedings of the ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC). p. 469-472. Institute of Electrical and Electronics Engineers (IEEE), 2022 xxx. doi:10.1109/ESSCIRC55480.2022.9911369. http://hdl.handle.net/2078.1/266034

15. Roth, Florian; Bidoul, Noémie; Rosca, Teodor; D¨orpinghaus, Meik; Flandre, Denis; Ionescu, Adrian M.; Fettweis, Gerhard. Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes. 2022 xxx. http://hdl.handle.net/2078.1/260788

16. Imburgia, Antonino; Kaziz, Sinda; Romano, Pietro; Flandre, Denis; Artale, Giovanni; Rizzo, v; Viola, Fabio; Tounsi, Fares; Ala, Guido. Investigation of PCB-based Inductive Sensors Orientation for Corona Partial Discharge Detection. p. 559-563. In: proceedings of the 2022 IEEE 21st Mediterranean Electrotechnical Conference, I E E E, 2022, 978-1-6654-4280-0/22, 559-563 xxx. doi:10.1109/MELECON53508.2022.9843026. http://hdl.handle.net/2078.1/267417

17. Kaziz, Sinda; Imburgia, Antonino; Flandre, Denis; Rizzo, Giuseppe; Romano, Pietro; Viola, Fabio; Ala, Guido; Tounsi, Fares. Performances of a PCB-based Loop Antenna Inductive Sensor for Partial Discharges Detection. p. 9-12. In: Proceedings of the 2022 IEEE 4th International Conference on Dielectrics (ICD 2022), I E E E, 2022, 978-1-6654-1833-1/22, 9-12 xxx. doi:10.1109/ICD53806.2022.9863503. http://hdl.handle.net/2078.1/267421

18. Kneip, Adrian; Lefebvre, Martin; Verecken, Julien; Bol, David. A 1-to-4b 16.8-POPS/W 473-TOPS/mm2 6T-based In-Memory Computing SRAM in 22nm FD-SOI with Multi-Bit Analog Batch-Normalization. In: ESSCIRC 2022, 2022, 978-1-6654-8494-7/2 xxx. doi:10.1109/ESSCIRC55480.2022.9911348. http://hdl.handle.net/2078.1/268575

19. Halder, Arka; Nyssens, Lucas; Rack, Martin; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. 22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C. In: SiRF 2022 Proceedings, IEEE, 2022, 978-1-6654-3469-0, p. 27-30 xxx. doi:10.1109/sirf53094.2022.9720052. http://hdl.handle.net/2078.1/262713

20. Dekimpe, Rémi; Bol, David. Mixed-Signal Compensation of Tripolar Cuff Electrode Imbalance in a Low-Noise ENG Analog Front-End. In: ESSCIRC 2022, 2022, 978-1-6654-8494-7/2 xxx. doi:10.1109/ESSCIRC55480.2022.9911326. http://hdl.handle.net/2078.1/268574

21. Rack, Martin; Nyssens, Lucas; Courte, Quentin; Lederer, Dimitri; Raskin, Jean-Pierre. Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI. In: ESSDERC 2021 Proceedings, IEEE, 2021, 978-1-6654-3748-6, p. 195-198 xxx. doi:10.1109/ESSDERC53440.2021.9631835. http://hdl.handle.net/2078.1/262711

22. Bol, David; Pirson, Thibault; Dekimpe, Rémi. Moore's Law and ICT Innovation in the Anthropocene. In: Proceedings of the IEEE Design, Automation and Test in Europe Conference 2021, 2021 xxx. http://hdl.handle.net/2078.1/243578

23. Zeng, Xi; Zhukova, Maria; Faniel, Sébastien; Proost, Joris; Flandre, Denis. Material, optical and electrical characterization of DC sputtered CuO by tuning oxygen concentration. In: Proceedings of the EMRS-Spring meeting 2021, 2021 xxx. http://hdl.handle.net/2078.1/248726

24. Rack, Martin; Nyssens, Lucas; Nabet, Massinissa; Lederer, Dimitri; Raskin, Jean-Pierre. Field-Effect Passivation of Lossy Interfaces in High-Resistivity RF Silicon Substrates. In: EuroSOI-ULIS 2021 Proceedings, IEEE, 2021, 9781665437462, p. 130-133 xxx. doi:10.1109/eurosoi-ulis53016.2021.9560697. http://hdl.handle.net/2078.1/262712

25. Pirson, Thibault; Bol, David; Le Brun, Grégoire; Raskin, Jean-Pierre. Can we cope with the upcoming massive deployment of IoT within environmental limits?. 2021 xxx. http://hdl.handle.net/2078.1/260531

26. Stoukatch, Serguei; André, Nicolas; Dupont, François; Redouté, Jean-Michel; Flandre, Denis. Ultra-Thinned Individual SOI Die ACF FC Bonded on Rigid and Flex PCB. In: Proceedings, IEEE, 2021, 978-0-9568086-7-7, p. 1-5 xxx. doi:10.23919/EMPC53418.2021.9584947. http://hdl.handle.net/2078.1/272252

27. Lefebvre, Martin; Moreau, Ludovic; Dekimpe, Rémi; Bol, David. A 0.2-to-3.6TOPS/W Programmable Convolutional Imager SoC with In-Sensor Current-Domain Ternary-Weighted MAC Operations for Feature Extraction and Region-of-Interest Detection. In: Proceedings of the 2021 IEEE International Solid-State Circuits Conference. p. 118-119. Institute of Electrical and Electronics Engineers (IEEE), 2021 xxx. http://hdl.handle.net/2078.1/243970

28. Dekimpe, Rémi; Schramme, Maxime; Lefebvre, Martin; Kneip, Adrian; Saeidi, Roghayeh; Xhonneux, Mathieu; Moreau, Ludovic; Gonzalez Gonzalez, Marco Antonio; Pirson, Thibault; Bol, David. SleepRider: a 5.5µW/MHz Cortex-M4 MCU in 28nm FD-SOI with ULP SRAM, Biomedical AFE and Fully-Integrated Power, Clock and Back-Bias Management. In: Proceedings of the 2021 Symposium on VLSI Circuits. p. 2 (28/07/2021). IEEE, 2021 xxx. doi:10.23919/VLSICircuits52068.2021.9492365. http://hdl.handle.net/2078.1/251534

29. Amor, Sedki; Kilchytska, Valeriya; Tounsi, Fares; André, Nicolas; Francis, Laurent; Flandre, Denis. In-situ recovery of on-membrane PD-SOI MOSFET from TID defects after gamma irradiation. In: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, 978-1-6654-3745-5 xxx. doi:10.1109/EuroSOI-ULIS53016.2021.9560673. http://hdl.handle.net/2078.1/252876

30. Delhaye, Thibault; Roisin, Nicolas; André, Nicolas; Francis, Laurent; Flandre, Denis. Improving MOSFET Piezoresistive Strain Gauges Limit of Detection Using Lock-In Principle. In: Proceedings of the IEEE Sensors 2021, 2021 xxx. http://hdl.handle.net/2078.1/259484

31. Jain, Sameer H.; Lederer, Dimitri; Prindle, Chris; Kaltalioglu, Erdem. Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI. In: ESSDERC 2021 Proceedings, IEEE, 2021, 978-1-6654-3748-6, p. 199-202 xxx. doi:10.1109/ESSDERC53440.2021.9631775. http://hdl.handle.net/2078.1/262709

32. Xhonneux, Mathieu; Louveaux, Jérôme; Bol, David. Implementing a LoRa Software-Defined Radio on a General-Purpose ULP Microcontroller. In: Proceedings of the 2021 International Workshop on Signal Processing Systems, 2021 xxx. http://hdl.handle.net/2078.1/251524

33. Wei, Peng; André, Nicolas; Zeng, Xi; Sabri Alirezaei, Iman; Li, Guoli; Bouterfa, Mohamed; Francis, Laurent; Flandre, Denis. Micrometer-thin SOI Sensors for E-Skin Applications. In: IEEE Sensors. Proceedings. I E E E, 2020 xxx. doi:10.1109/SENSORS47125.2020.9278716. http://hdl.handle.net/2078.1/243039

34. Frenkel, Charlotte; Legat, Jean-Didier; Bol, David. A 28-nm Convolutional Neuromorphic Processor Enabling Online Learning with Spike-Based Retinas. In: Proceedings of ISCAS 2020. p. 5. IEEE, 2020 xxx. doi:10.1109/ISCAS45731.2020.9180440. http://hdl.handle.net/2078.1/236441

35. SStorrer, Laurent; Yildirim, Hasan Can; Pocoma Copa, Evert; Louveaux, Jérôme; De Doncker, Philippe; Pollin, Sofie; Horlin, François. Experimental Implementation of a Multi-Antenna 802.11ax-based Passive Bistatic Radar for Human Target Detection. 2020 xxx. http://hdl.handle.net/2078.1/265297

36. Yildirim, H.C.; Louveaux, Jérôme; De Docker, Philippe; Horlin, F.. Impact of Interference on OFDM based Radars. 2020 xxx. http://hdl.handle.net/2078.1/265306

37. Li, Guoli; He, Jiawei; Flandre, Denis; Liao, lei. Defect Engineering in n-Type Oxide Semiconductor TFTs. 2020 xxx. http://hdl.handle.net/2078.1/249252

38. Blandino, Steve; Bertrand, Thibault; Desset, Claude; Bourdoux, André; Pollin, Sofie; Louveaux, Jérôme. A Blind Beam Tracking Scheme for Millimeter Wave Systems. 2020 xxx. http://hdl.handle.net/2078.1/265301

39. Flandre, Denis; Schramme, Maxime; Gimeno Gasca, Cecilia; Drouguet, Maxime; André, Nicolas; Craeye, Christophe; Bol, David. Cinq générations de chips UWB (Ultra-Wide-Band) pour la géo-localisation et la transmission de données à très basse consommation. 2020 xxx. http://hdl.handle.net/2078.1/227585

40. Bol, David; Schramme, Maxime; Moreau, Ludovic; Haine, Thomas; Xu, Pengcheng; Frenkel, Charlotte; Dekimpe, Rémi; Stas, François; Flandre, Denis. A 40-to-80MHz Sub-4µW/MHz ULV Cortex-M0 MCU SoC in 28nm FDSOI with Dual-Loop Adaptive Back-Bias Generator for 20µs Wake-Up From Deep Fully Retentive Sleep Mode. In: Proceedings of the 2019 IEEE International Solid- State Circuits Conference (ISSCC 2019), IEEE, 2019, 978-1-5386-8531-0/19, 322-323 xxx. doi:10.1109/ISSCC.2019.8662293. http://hdl.handle.net/2078.1/214779

41. Kassab, Hussein; Louveaux, Jérôme. Simultaneous Wireless Information and Power Transfer using Rectangular Pulse and CP-OFDM. 2019 xxx. http://hdl.handle.net/2078.1/265314

42. Martínez-Pérez, Antonio D.; Gimeno Gasca, Cecilia; Flandre, Denis; Aznar, Francisco; Royo, Guillermo; Sánchez-Azqueta, Carlos. Methodology for Performance Optimization in Noise- and Distortion-Canceling LNA. In: Proceedings of SMACD 2019, IEEE, 2019 xxx. doi:10.1109/SMACD. http://hdl.handle.net/2078.1/218945

43. Martins d’Oliveira, Ligia; Kilchytska, Valeriya; Flandre, Denis; de Souza, Michelly. Harmonic Distortion in Symmetric and Asymmetric Self-Cascodes of UTBB FD SOI Planar MOSFETs. 2019 xxx. http://hdl.handle.net/2078.1/227417

44. Haine, Thomas; Flandre, Denis; Bol, David. An 8-T ULV SRAM macro in 28nm FDSOI with 7.4 pW/bit retention power and back-biased-scalable speed/energy trade-off. 2018 xxx. http://hdl.handle.net/2078.1/207942

45. Xu, Pengcheng; Flandre, Denis; Bol, David. Design of a 2.45-GHz RF Energy Harvester for SWIPT IoT smart sensors. In: Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018, 107-110 xxx. http://hdl.handle.net/2078.1/209319

46. Gimeno Gasca, Cecilia; Flandre, Denis; Bol, David. Low-Power Half-Rate Dual-Loop Clock-Recovery System in 28-nm FDSOI. 2018 xxx. http://hdl.handle.net/2078.1/196445

47. Dekimpe, Rémi; Xu, Pengcheng; Schramme, Maxime; Flandre, Denis; Bol, David. A Battery-less BLE IoT Motion Detector Supplied by 2.45-GHz Wireless Power Transfer. 2018 xxx. http://hdl.handle.net/2078.1/214781

48. Royo, C.; Sanchez-Azqueta, C.; Aldea, C.; Celma, C.; Gimeno Gasca, Cecilia. high-Linear Transimpedance Amplifier for Remote Antenna Units. 2018 xxx. http://hdl.handle.net/2078.1/196444

49. Haine, Thomas; Segers, Johan; Flandre, Denis; Bol, David. Gradient Importance Sampling: an Efficient Statistical Extraction methodology of High-Sigma SRAM Dynamic Characteristics. In: 2018 Design, Automation Test in Europe Conference Exhibition (PROCEEDINGS), 2018, 195-200 xxx. doi:10.23919/DATE.2018.8342002. http://hdl.handle.net/2078.1/191730

50. Stas, François; Bol, David. Integration of Level Shifting in a TSPC Flip-Flop for Low-Power Robust Timing Closure in Dual-Vdd ULV Circuits. 2017 xxx. http://hdl.handle.net/2078.1/189103

51. Mesquida, Thomas; Valentian, Alexandre; Bol, David; Beigne, Edith. Fixed Point Neuro-Inspired DSP Using Spiking Neurons in a GALS Architecture. 2017 xxx. http://hdl.handle.net/2078.1/189101

52. Haine, Thomas; Nguyen, Quoc-Khoi; Stas, François; Moreau, Ludovic; Flandre, Denis; Bol, David. An 80-MHz 0.4V ULV SRAM macro in 28nm FDSOI achieving 28-fJ/bit access energy with a ULP bitcell and on-chip adaptive back bias generation. p. 4. In: Proceedings of the 43rd IEEE European Solid State Circuits Conference (ESSCIRC 2017), IEEE, 2017 xxx. http://hdl.handle.net/2078.1/188405

53. Stas, François; Bol, David. A 0.4V 0.08fJ/cycle Retentive True-Single-Phase-Clock 18T Flip-Flop in 28nm FDSOI CMOS. 2017 xxx. http://hdl.handle.net/2078.1/189102

54. Haddad, Pierre-Antoine; Raskin, Jean-Pierre; Flandre, Denis. Efficient passive energy harvesters at 950 MHz and 2.45 GHz for 100 μW applications in 65 nm CMOS. In: Proceedings of the 2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS), IEEE, 2017, 978-1-5090-6113-6, 508-511 xxx. doi:10.1109/ICECS.2016.7841250. http://hdl.handle.net/2078.1/182364

55. Frenkel, Charlotte; Indiveri, Giacomo; Legat, Jean-Didier; Bol, David. A Fully-Synthetized 20-Gate Digital Spike-Based Synapse with Embedded Online Learning. 2017 xxx. http://hdl.handle.net/2078.1/189099

56. Van Brandt, Léopold; Kilchytska, Valeriya; Raskin, Jean-Pierre; Parvais, Bertrand; Flandre, Denis. Optimal measurement parameters for accurate time-domain and spectral analyses of RTN. 2017 xxx. http://hdl.handle.net/2078.1/196450

57. Flandre, Denis; André, Nicolas; Al Kadi Jazairli, Mohamad; Olbrechts, Benoit; Gilet, Samuel; Haddad, Pierre-Antoine; Gimeno Gasca, Cecilia; Raskin, Jean-Pierre. vers des capteurs implantés de quelques mm³ à consommation ultra faible, avec transmissions de puissance en RF et de données en UWB. 2017 xxx. http://hdl.handle.net/2078.1/192482

58. Frenkel, Charlotte; Legat, Jean-Didier; Bol, David. A Compact Phenomenological Digital Neuron Implementing the 20 Izhikevich Behaviors. 2017 xxx. http://hdl.handle.net/2078.1/189097

59. Haddad, Pierre-Antoine; Stas, François; Raskin, Jean-Pierre; Bol, David; Flandre, Denis. Automated Layout-integrated Sizing of a 2.45 GHz Differential-Drive Rectifier in 28 nm FDSOI CMOS. In: Proceedings of the 2017 IEEE Wireless Power Transfer Conference (WPTC 2017), 2017 xxx. doi:10.1109/WPT.2017.7953845. http://hdl.handle.net/2078.1/187183

60. Peruzzi, Vinicius Vono; Renaux, Christian; Flandre, Denis; Gimenez, Salvador Pinillos. Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style. 2017 xxx. http://hdl.handle.net/2078.1/197229

61. Flandre, Denis; Kilchytska, Valeriya; Gimeno Gasca, Cecilia; Bol, David; Kazemi Esfeh, Babak; Raskin, Jean-Pierre. Measurement and modelling of specific behaviors in 28nm FD SOI UTBB MOSFETs of importance for analog / RF amplifiers. 2017 xxx. http://hdl.handle.net/2078.1/192479

62. Gimeno Gasca, Cecilia; Bol, David; Flandre, Denis. SOI, from Basics to Applications. 2017 xxx. http://hdl.handle.net/2078.1/197198

63. Mesquida, Thomas; Valentian, Alexandre; Bol, David; beigne, Edith. Architecture Exploration of a Fixed Point Computation Unit using Precise Timing Spiking Neurons. In: Proceedings of the 27th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS 2017), 2017, p. 8 xxx. http://hdl.handle.net/2078.1/191119

64. Royo, G.; Gimeno Gasca, Cecilia; Sanchez-Azqueta, C.; Aldea, C.; Celma, S.. CMOS Transimpedance Amplifier with Controllable Gain for RF Overlay. 2016 xxx. doi:10.1109/PRIME.2016.7519513. http://hdl.handle.net/2078.1/181306

65. Al Kadi Jazairli, Mohamad; André, Nicolas; Tooten, Ester; Olbrechts, Benoit; Raskin, Jean-Pierre; Flandre, Denis. Ultra-low-power 130nm SOI CMOS smart sensor for in-situ mechanical stress in SiP and SoC applications. 2016 xxx. http://hdl.handle.net/2078.1/176010

66. Li, Guoli; André, Nicolas; Poncelet, Olivier; Gérard, Pierre; Zeeshan Ali, Syed; Udrea, Florin; Francis, Laurent; Zeng, Yun; Flandre, Denis. Operation of suspended lateral SOI PIN photodiode with aluminium back gate. In: Proceedings de la conférence EUROSOI-ULIS 2016, IEEE, 2016, 978-1-4673-8609-8, 155-158 xxx. doi:10.1109/ULIS.2016.7440076; 10.1109/ULIS.2016.7440076. http://hdl.handle.net/2078.1/173589

67. Pereira, Arianne Soares do Nascimento; de Streel, Guerric; Planes, N.; Haond, M.; Giacomini, R.; Flandre, Denis; Kilchytska, Valeriya. Analysis and modelling of Temperature Effect on DIBL in UTBB FD SOI MOSFETs. In: Proceedings de la conférence EUROSOI-ULIS 2016, IEEE, 2016, 978-1-4673-8609-8, 116-119 xxx. doi:10.1109/ULIS.2016.7440066; 10.1109/ULIS.2016.7440066. http://hdl.handle.net/2078.1/173664

68. de Souza, Michelly; Pavanello, Marcelo Antonio; Flandre, Denis. Low power highly linear temperature sensor based on SOI lateral PIN diodes. 2016 xxx. doi:10.1109/S3S.2016.7804382. http://hdl.handle.net/2078.1/181123

69. de Streel, Guerric; Stas, François; Gurné, Thibaut; Durant, François; Frenkel, Charlotte; Bol, David. SleepTalker: a 28nm FDSOI ULV 802.15.4a IR-UWB Transmitter SoC achieving 14pJ/bit at 27Mb/s with Adaptive-FBB-based Channel Selection and Programmable Pulse Shape. 2016 xxx. doi:10.1109/VLSIC.2016.7573482. http://hdl.handle.net/2078.1/181104

70. Moradi, Amir; Standaert, François-Xavier. Moments-Correlating DPA. 2016 xxx. doi:10.1145/2996366.2996369. http://hdl.handle.net/2078.1/181917

71. Molto, A.R.; Doria, R.T.; de Souza, M.; Flandre, Denis; Pavanello, M.A.. Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature. 2016 xxx. doi:10.1109/SBMicro.2016.7731319. http://hdl.handle.net/2078.1/178070

72. Kamel, Dina; de Streel, Guerric; Merino Del Pozo, Santos; Nawaz, Kashif; Standaert, François-Xavier; Flandre, Denis; Bol, David. Towards Securing Low-Power Digital Circuits with Ultra-Low-Voltage Vdd Randomizers. In: Proceedings of the 6th International Conference on Security, Privacy, and Applied Cryptography Engineering (SPACE 2016) (Lecture Notes in Computer Science), Springer, 2016, 978-3-319-49444-9, p. 233-248 xxx. doi:10.1007/978-3-319-49445-6_13. http://hdl.handle.net/2078.1/181927

73. Peruzzi, Vinicius Vono; Renaux, Christian; Flandre, Denis; Gimenez, Salvador Pinillos. Boosting the MOSFETs matching by using diamond layout style. 2016 xxx. doi:10.1109/SBMicro.2016.7731334. http://hdl.handle.net/2078.1/178076

74. Assalti, R.; Doria, R.T.; Pavanello, M.A.; de Souza, M.; Flandre, Denis. Low-frequency noise in asymmetric self-cascode FD SOI. 2016 xxx. http://hdl.handle.net/2078.1/178172

75. Haddad, Pierre-Antoine; Raskin, Jean-Pierre; Flandre, Denis. Automated design of a 13.56 MHz Corner-robust Efficient Differential Drive Rectifier for 10 μA load. 2016 xxx. doi:10.1109/ISCAS.2016.7538924. http://hdl.handle.net/2078.1/181099

76. Mesquida, Thomas; Valentian, Alexandre; Bol, David; Beigne, Edith. Impact of the AER-Induced Timing Distortion on Spiking Neural Networks Implementing DSP. 2016 xxx. doi:10.1109/PRIME.2016.7519501. http://hdl.handle.net/2078.1/181094

77. Kazemi Esfeh, Babak; Kilchytska, Valeriya; Flandre, Denis; Raskin, Jean-Pierre. RF SOI CMOS Technology on 1st and 2nd Generation Trap-Rich High Resistivity SOI Wafers. In: Proceedings de la conférence EUROSOI-ULIS 2016, IEEE, 2016, 978-1-4673-8609-8, 159-161 xxx. doi:10.1109/ULIS.2016.7440077. http://hdl.handle.net/2078.1/173584

78. Frenkel, Charlotte; Legat, Jean-Didier; Bol, David. Comparative Analysis of Redundancy Schemes for Soft-Error Detection in Low-Cost Space Applications. In: Proceedings of the 2016 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI/SoC), 2016 xxx. doi:10.1109/VLSI-SoC.2016.7753573. http://hdl.handle.net/2078.1/181096

79. Bol, David; de Streel, Guerric; Flandre, Denis. Can We Connect Trillions of IoT Sensors in a Sustainable Way ?A Technology/Circuit Perspective. In: Proceedings of S3S 2015, IEEE, 2015, 978-1-5090-0259-7 xxx. http://hdl.handle.net/2078.1/165649

80. de Streel, Guerric; Flandre, Denis; Dehollain, Catherine; Bol, David. Towards Ultra-Low-Voltage Wideband Noise-Cancelling LNAs in 28nm FDSOI. In: Proceedings of IEEE S3S, IEEE, 2015, 2 xxx. doi:10.1109/S3S.2015.7333487. http://hdl.handle.net/2078.1/165643

81. Taha Elthakeb Naguib Youssef, Ahmed; Haine, Thomas; Flandre, Denis; Ismail, Yehea; Elhamid, Hamdy Abd; Bol, David. Analysis and Optimization for Dynamic Read Stability in 28nm SRAM Bitcells. In: Proceedings of ISCAS 2015, IEEE, 2015, 978-1-4799-8391-9, 14141417 xxx. doi:10.1109/ISCAS.2015.7168908. http://hdl.handle.net/2078.1/164425

82. El Fissi, Lamia; Jaouad, A.; Vandormael, Denis; Francis, Laurent. Fabrication of new Interdigital Transducers for Surface Acoustic Wave Device. In: Physics Procedia (ScienceDirect), Elsevier B.V.: The Netherlands, 2015, p. 936-940 xxx. doi:10.1016/j.phpro.2015.08.194. http://hdl.handle.net/2078.1/165408

83. Bol, David; Boufouss, El Hafed; Flandre, Denis; De Vos, Julien. A 0.48mm² 5µW-10mW Indoor-Outdoor PV Energy-Harvesting Management Unit in a 65nm SoC based on a Single Bidirectional Multi-Gain/Multi-Mode Switched-Cap Converter with Supercap Storage. In: Proceedings of ESSCIRC 2015, IEEE, 2015, 4 xxx. http://hdl.handle.net/2078.1/164922

84. Makovejev, Sergej; Planes, N.; Haond, M.; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. Self-Heating in 28 nm Bulk and FDSOI. In: Proceedings of EUROSOI-ULIS 2015, IEEE, 2015, 978-1-4799-6910-4, 41-44 xxx. doi:10.1109/ULIS.2015.7063768; 10.1109/ULIS.2015.7063768. http://hdl.handle.net/2078.1/164955

85. Dorai, R.T.; Flandre, Denis; Trevisoli, R.; de Souza, Michelly; Pavanelo, Marcelo Antonio. Use of back gate bias to enhance the analog performance of planar FD and UTBB SOI transistors-based self-cascode structures. In: Proceedings of SBMicro 2015, 2015, 978-1-4673-7162-9 xxx. doi:10.1109/SBMicro.2015.7298134. http://hdl.handle.net/2078.1/171039

86. d'Oliveira, L.M.; Doria, R.T.; Pavanelo, Marcelo Antonio; Flandre, Denis; de Souza, Michelly. Effect of channel doping concentration on the harmonic distortion of asymmetric n- and p-type self-cascode MOSFETs. In: Proceedings of SBMicro 2015, 2015, 978-1-4673-7162-9 xxx. http://hdl.handle.net/2078.1/171037

87. Clerc, Sylvain; Saligane, Mehdi; Abouzeid, Fady; Cochet, Martin; Daveau, Jean-Marc; Bottoni, Cyril; Bol, David; De Vos, Julien; Zamora, Dominique; Coeffic, Benjamin; Soussan, Dimitri; Croain, Damien; Naceur, Mehdi; Schamberger, Pierre; Roche, Philippe; Sylvester, Dennis. A 0.33V/-40°C Process/Temperature Closed-Loop Compensation SoC Embedding All-Digital Clock Multiplier and DC-DC Converter Exploiting FDSOI 28nm Back-Gate Biasing. 2015 xxx. doi:10.1109/ISSCC.2015.7062970. http://hdl.handle.net/2078.1/159182

88. Frenkel, Charlotte; Legat, Jean-Didier; Bol, David. A Partial Reconfiguration-Based Scheme to Mitigate Multiple-Bit Upsets for FPGAs in Low-Cost Space Applications. In: Proceedings ReCoSoC 2015, 2015, 978-1-4673-7942-7 xxx. doi:10.1109/ReCoSoC.2015.7238095. http://hdl.handle.net/2078.1/163825

89. Assalti, R.; Pavanello, Marcelo Antonio; Flandre, Denis; de Souza, Michelly. Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications. In: Proceedings of SBMicro 2015, 2015, 978-1-4673-7162-9 xxx. doi:10.1109/SBMicro.2015.7298120. http://hdl.handle.net/2078.1/170457

90. Fino, Leonardo Navarenho de Souza; da Silveira, M.A.G.; Renaux, Christian; Flandre, Denis; Gimenez, Salvador Pinillos. OCTO Layout Variations as an Alternative to Mitigate TID Effects. 2015 xxx. http://hdl.handle.net/2078.1/167803

91. de Streel, Guerric; De Vos, Julien; Bol, David. A DeltaVT 0.2V to 1V 0.01mm2 9.7nW Voltage Reference in 65nm LP/GP CMOS. In: Proceedings of S3S 2015, IEEE, 2015, 978-1-5090-0259-7, 2 xxx. http://hdl.handle.net/2078.1/165644

92. Flandre, Denis; Kilchytska, Valeriya; Bol, David; Francis, Laurent; André, Nicolas; Raskin, Jean-Pierre. Analog/RF, sensors and MEMS in SOI: demos and performance assessment. 2015, 26 xxx. http://hdl.handle.net/2078.1/164427

93. Francis, Laurent. The development of integrated capacitive array biosensors towards the selective and real-time detection of single bacterium. 2015 xxx. http://hdl.handle.net/2078.1/176358

94. Ray Chaudhuri, Ashesh; Helin, P.; van den Hoven, R.; Severi, S.; Rottenberg, X.; Yazicioglu, R.F.; Witvrouw, A.; Francis, Laurent; Tilmans, H.A.C.. CMOS integrated poly-sigemems accelerometer above 0.18 µm technology. 2015 xxx. http://hdl.handle.net/2078.1/176116

95. Walewyns, Thomas; Emmerechts, Carl; Gérard, Pierre; André, Nicolas; Francis, Laurent. Live demonstration: Microsystem integration of a palladium-based MEMS hydrogen gas sensor. 2015 xxx. doi:10.1109/ICSENS.2015.7370292. http://hdl.handle.net/2078.1/176065

96. El Fissi, Lamia; Jaouad, Abdelatif; Vandormael, Denis; Francis, Laurent. Fabrication of new Interdigital Transducers for Surface Acoustic Wave Device. 2015 xxx. http://hdl.handle.net/2078.1/161092

97. Ghalehbeygi, O.T.; Trabzon, L.; Francis, Laurent; Kizil, H.. Fabrication method of MEMS based Clamped-Clamped resonant magnetometer. In: Advances Materials Research. Vol. 970, no.6, p. 106-110 (2014). Trans Tech Publications Ltd, 2014 xxx. doi:10.4028/www.scientific.net/AMR.970.106. http://hdl.handle.net/2078.1/152788

98. De Vos, Julien; Flandre, Denis; Bol, David. Switched-Capacitor DC/DC Converters for Empowering Internet-of-Things SoCs. 2014 xxx. doi:10.1109/FTFC.2014.6828615. http://hdl.handle.net/2078.1/145584

99. De Vos, Julien; Kilchytska, Valeriya; Flandre, Denis; Bol, David. Compensation of Total Ionizing Dose Effects in ULV SoCs Through Adaptive Voltage Scaling. 2014 xxx. doi:10.1109/S3S.2014.7028238. http://hdl.handle.net/2078.1/152082

100. Francis, Laurent; Druart, Sylvain; Flandre, Denis. A Self-Oscillating System to Characterize Liquid Salinities within a Single triangular Waveform Signal. 2014 xxx. http://hdl.handle.net/2078.1/150917

101. Poncelet, Olivier; Simonis, Priscillia; Francis, laurent. Bio-inspired multilayer polarizer for anti-counterfeiting. 2014 xxx. http://hdl.handle.net/2078.1/156782

102. Couniot, Numa; Vanzieleghem, Thomas; Rasson, Jonathan; Van Overstraeten, Nancy; Poncelet, Olivier; Mahillon, Jacques; Francis, Laurent; Flandre, Denis. Real-time, label-free and selective impedimetric detection of bacteria using CMOS-compatible microelectrodes in a fluidic cell. 2014 xxx. http://hdl.handle.net/2078.1/147052

103. Haine, Thomas; Stas, François; Bol, David. Optimization of the area/robustness/speed trade-off in a 28nm FDSOI latch based on ULP diodes. 2014 xxx. doi:10.1109/FTFC.2014.6828614. http://hdl.handle.net/2078.1/145582

104. Couniot, Numa; Vanzieleghem, Thomas; Rasson, Jonathan; Van Overstraeten, Nancy; Poncelet, Olivier; Mahillon, Jacques; Francis, Laurent; Flandre, Denis. Impedance spectroscopy using lysin as selectivity means for detection of bacteria. 2014 xxx. http://hdl.handle.net/2078.1/151963

105. Bol, David. Green SoCs for a Sustainable Internet-of-Things. 2014 xxx. http://hdl.handle.net/2078.1/152784

106. Bol, David; de Streel, Guerric; Botman, François; Kuti Lusala Tsumbu-Mbi, Vital Angelo; Couniot, Numa. A 65-nm 0.5-V 17-pJ/frame.pixel DPS CMOS Image Sensor for Ultra-Low-Power SoCs achieving 40-dB Dynamic Range. In: Digest of Technical Papers, IEEE, 2014, 978-1-4799-3328-0, p. 180-182 xxx. doi:10.1109/VLSIC.2014.6858426. http://hdl.handle.net/2078.1/145578

107. Couniot, Numa; Bol, David; Poncelet, Olivier; Francis, Laurent; Flandre, Denis. A very high frequency capacitance-controlled oscillator for improved biosensing in high-salt solutions. 2014 xxx. http://hdl.handle.net/2078.1/147053

108. de Streel, Guerric; De Vos, Julien; Flandre, Denis; Bol, David. A 65nm 1V to 0.5V Linear Regulator with Ultra Low Quiescent Current for Mixed-Signal ULV SoCs. 2014 xxx. doi:10.1109/FTFC.2014.6828597. http://hdl.handle.net/2078.1/145581

109. Turnquist, Matthew J.; de Streel, Guerric; Bol, David; Hiienkari, Markus; Koskinen, lauri. Effects of Back-Gate Bias on Switched-Capacitor DC-DC Converters in UTBB FD-SOI. 2014 xxx. doi:10.1109/S3S.2014.7028200. http://hdl.handle.net/2078.1/152876

110. d'Oliveira, L.Martins; Trevisoli, Doria; Pavanello, Marcelo Antonio; de Souza, Michelly; Kilchytska, Valeriya; Flandre, Denis. Asymmetric self-cascode FD SOI nMOSFETs harmonic distortion at cryogenic temperatures. 2014 xxx. doi:10.1109/WOLTE.2014.6881025. http://hdl.handle.net/2078.1/152035

111. André, Nicolas; Pollissard, Guillaume; Couniot, Numa; Poncelet, Olivier; Gérard, Pierre; Francis, Laurent. Harsh Environment Sensing Platforms in Silicon-on-Insulator Technology. 2014 xxx. http://hdl.handle.net/2078.1/146850

112. André, Nicolas; Pollissard, Guillaume; Couniot, Numa; Poncelet, Olivier; Gérard, Pierre; Francis, Laurent; Flandre, Denis. Harsh Environment Sensing Platforms in Silicon-on-Insulator technology. 2014 xxx. http://hdl.handle.net/2078.1/156231

113. André, Nicolas; Pollissard, Guillaume; Couniot, Numa; Gérard, Pierre; Ali, Z.S.; Udrea, F.; Francis, Laurent; Flandre, Denis. A Silicon-on-Insulator Platform Functionalized By Atomic Layer Deposition for Humidity Sensing. 2014 xxx. http://hdl.handle.net/2078.1/152096

114. Flandre, Denis; Bol, David. Designing robust subthreshold and ultra-low-voltage mixed-signal circuits against progress variations, temperature and radiation effects. 2014 xxx. http://hdl.handle.net/2078.1/154440

115. Walewyns, Thomas; Spirito, David; Francis, Laurent. A Tunable Palladium-Based Capacitive MEMS Hydrogen Sensor Performing High Dynamics, High Selectivity and Ultra-Low Power Sensing. 2014 xxx. http://hdl.handle.net/2078.1/156236

116. de Souza Fino, Leonardo Navarenho; Aparecida Guazzelli da Silveira, Marcilei; Renaux, Christian; Flandre, Denis; Pinillos Gimenez, Salvador. Boosting the Radiation Hardness and Higher Reestablishing Pre-Rad Conditions by Using OCTO Layout Style for MOSFETs. In: Proceedings of SBMicro 2014, 2014, 1-8 xxx. doi:10.1109/SBMicro.2014.6940133. http://hdl.handle.net/2078.1/152088

117. Kilchytska, Valeriya; Makovejev, Sergej; Barraud, S.; Poiroux, T.; Raskin, Jean-Pierre; Flandre, Denis. Trigate NanoWire MOSFETs Analog Figures of Merit. In: Proceedings of the 10th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2014), 2014, p. 2 xxx. http://hdl.handle.net/2078.1/144281

118. Flandre, Denis; Kilchytska, Valeriya; Boufouss, El Hafed; Alvarado Pulido, José Joaquin. Analog design in SOI for hostile environments and high temperatures. 2014 xxx. http://hdl.handle.net/2078.1/157248

119. Kilchytska, Valeriya; Makovejev, Sergej; Raskin, Jean-Pierre; Flandre, Denis. Advantages and Challenges of Advanced MOSFETs for Analog and RF Applications. In: Abstratcs - CMOS Emerging Technologies Research Symposium, 2014, p. 33 xxx. http://hdl.handle.net/2078.1/157256

120. André, Nicolas; Pollissard, Guillaume; Couniot, Numa; Gérard, Pierre; Ali, Z.; Udrea, F.; Francis, Laurent; Flandre, Denis. Harsh Environment Water Vapour Sensing Platforms in SOI Technology. 2014 xxx. http://hdl.handle.net/2078.1/146851

121. Flandre, Denis. SOI CMOS sensors, transistors and circuits for ultra-low-power and harsh environment applications. 2014 xxx. http://hdl.handle.net/2078.1/157240

122. Francis, Laurent; André, Nicolas; Boufouss, El Hafed; Gérard, Pierre; Ali, Zeeshan; Udrea, Florin; Flandre, Denis. The effects of gamma irradiation on micro-hotplates with integrated temperature sensing diodes. 2014 xxx. doi:10.1117/12.2050734. http://hdl.handle.net/2078.1/152801

123. Makovejev, Sergej; Kazemi Esfeh, Babak; Raskin, Jean-Pierre; Kilchytska, Valeriya; Flandre, Denis; Barral, V.; Planes, N.; Haond, M.. Variability of UTBB MOSFET Analog Figures of Merit in Wide Frequency Range. In: Proceedings of the 2014 4th European Solid State Device research Conference (ESSDERC 2014), IEEE, 2014, 978-1-4799-4378-4, 222-225 xxx. doi:10.1109/ESSDERC.2014.6948800; 10.1109/ESSDERC.2014.6948800. http://hdl.handle.net/2078.1/157252

124. Flandre, Denis. A talk about university - industry relationships, transfers and start-up creation. 2014 xxx. http://hdl.handle.net/2078.1/157239

125. Walewyns, Thomas; Spirito, David; Gérard, Pierre; Emmerechts, Carl; Stoukatch, Serguei; Lahem, D.; Debliquy, M.; Francis, Laurent. Design, fabrication and integration of a palladium-based ultra-low power MEMS hydrogen sensor. 2014 xxx. http://hdl.handle.net/2078.1/156237

126. Walewyns, Thomas; Spirito, David; Francis, Laurent. A Tunable Palladium-Based Capacitive MEMS Hydrogen Sensor Performing High Dynamics, High Selectivity and Ultra-Low Power Sensing. 2014 xxx. http://hdl.handle.net/2078.1/156235

127. d'Oliveira, Ligia M.; Flandre, Denis; Pavanello, Marcelo Antonio; de Souza, Michelly. Effect of High Temperature on Analog Parameters of Asymmetric Self-Cascode SOI nMOSFETs. 2014 xxx. http://hdl.handle.net/2078.1/152093

128. Makovejev, Sergej; Barraud, S.; Poiroux, T.; Rozeau, O.; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. Impact of Self-Heating on UTB MOSFET Parameters. In: Proceedings of the 10th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2014), 2014 xxx. http://hdl.handle.net/2078.1/144280

129. Flandre, Denis. Advanced CMOS SOI Technologies & designs for high operational temperature micro-systems. 2014 xxx. http://hdl.handle.net/2078.1/157242

130. Bernard, Sébastien; Belleville, Bernard; Valentian, Alexandre; Legat, Jean-Didier; Bol, David. Experimental Analysis of Flip-Flops Minimum Operating Voltage in 28nm FDSOI and the Impact of Back Bias and temperature. 2014 xxx. doi:10.1109/PATMOS.2014.6951896. http://hdl.handle.net/2078.1/152750

131. Dortu, Fabian; Bernier, Damien; Cestier, Isabelle; Vandormael, Denis; Emmerechts, Carl; El Fissi, Lamia; Francis, Laurent; Nittler, Laurent; Houssiau, Laurent; Fodor, Balint; Agocs, Emil; Petrik, Peter; Fried, Miklos. Composite polymeric-inorganic waveguide fabricated by injection molding for biosensing applications. 2014 xxx. doi:10.1109/ICTON.2014.6876325. http://hdl.handle.net/2078.1/151135

132. Poncelet, Olivier; Simonis, priscillia; Francis, Laurent. Bio-inspired multilayer polarizer for anti-counterfeiting. 2014 xxx. http://hdl.handle.net/2078.1/156777

133. Makovejev, Sergej; Kazemi Esfeh, Babak; Barral, V.; Planes, N.; Haond, M.; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. Wide Frequency Band Assessment of 28 nm FDSOI Technology Platform for Analogue and RF Applications. In: Proceedings of the 15th International Conference on ULTIMATE INTEGRATION ON SILICON (ULIS 2014), 2014, p. 2 xxx. http://hdl.handle.net/2078.1/144282

134. Garcia, J.V.; Rocha, M.I.; March, C.; Garcia, P.; Francis, Laurent; Montoya, A.; Arnau, A.; Jimenez, Y.. Love Mode Surface Acoustic Wave and High Fundamental Frequency Quartz Crystal Microbalance immunosensors for the detection of carbaryl pesticide. 2014 xxx. doi:10.1016/j.proeng.2014.11.649. http://hdl.handle.net/2078.1/176118

135. Botman, François; De Vos, Julien; Bernard, Sébastien; Stas, François; Legat, Jean-Didier; Bol, David. Bellevue: a 50MHz Variable-Width SIMD 32bit Microcontroller at 0.37V for Processing-Intensive Wireless Sensor Nodes. 2014 xxx. doi:10.1109/ISCAS.2014.6865358. http://hdl.handle.net/2078.1/152751

136. Martins d'Oliveira, Ligia; Trevisoli Doria, Rodrigo; Pavanello, Marcelo Antonio; de Souza, Michelly; Flandre, Denis. Analysis of Harmonic Distortion of Asymmetric Self-Cascode Association of SOI nMOSFETs Operating in Saturation. 2014 xxx. doi:10.1109/ICCDCS.2014.7016161. http://hdl.handle.net/2078.1/157245

137. André, Nicolas; Pollissard, Guillaume; Couniot, Numa; Gérard, Pierre; Ali, Z.S.; Udrea, F.; Francis, Laurent; Flandre, Denis. A silicon-on-insulator (SOI) platform functionalized by atomic layer deposition (ALD) for humidity sensing. 2014 xxx. http://hdl.handle.net/2078.1/152095

138. Flandre, Denis. A talk about university – industry R&D collaborations in the contexts of Walloon competitiveness clustersand European projects on topics such as microsystems for aerospace or biomedical applications. 2014 xxx. http://hdl.handle.net/2078.1/157246

139. Kazemi Esfeh, Babak; Kilchytska, Valeriya; Barral, V.; Planes, N.; Haond, M.; Flandre, Denis; Raskin, Jean-Pierre. 28 nm FD SOI Technology Platform RF FoM. In: Proceedings of the 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, IEEE, 2014 xxx. doi:10.1109/S3S.2014.7028208; 10.1109/S3S.2014.7028208. http://hdl.handle.net/2078.1/157251

140. Trevisoli, Renan; de Souza, Michelly; Doria, Ridrigo D.; Kilchytska, Valeriya; Flandre, Denis; Pavanello, Marcelo Antonio. Effect of the Temperature on Junctionless Nanowire Transistors Electrical Parameters down to 4K. 2014 xxx. doi:10.1109/SBMicro.2014.6940134. http://hdl.handle.net/2078.1/152094

141. Assalti, R.; Pavanello, Marcelo Antonio; de Souza, Michelly; Flandre, Denis. Technological Parameters Scaling Influence on the Analog Performance of Graded-Channel SOI nMOSFET Transistors. 2014 xxx. doi:10.1109/ICCDCS.2014.7016159. http://hdl.handle.net/2078.1/157243

142. Assalti, R.; Pavanello, Marcelo Antonio; Flandre, Denis; de Souza, Michelly. Dependence of the Optimum Length of Lightly Doped Region of GC SOI nMOSFET with Front Gate Bias. 2014 xxx. http://hdl.handle.net/2078.1/152091

143. Trevisoli, Renan; de Souza, Michelly; Doria, Rodrigo T.; Kilchytska, Valeriya; Flandre, Denis; Pavanello, Marcelo Antonio. Analog operation of Junctionless Nanowire Transistors down to liquid helium temperature. 2014 xxx. doi:10.1109/WOLTE.2014.6881024. http://hdl.handle.net/2078.1/152038

144. El Fissi, Lamia; Houari, Rachid; Francis, Laurent. Fabrication of Love Mode Surface Acoustic Wave Devices with Substrate Buried Interdigital Transducers. 2014 xxx. http://hdl.handle.net/2078.1/156172

145. Flandre, Denis. Advanced SOI Performances & Ultra-Low-Power Design Examples. 2014 xxx. http://hdl.handle.net/2078.1/157247

146. de Streel, Guerric; Bol, David. Impact of Back Gate Biasing Schemes on Energy and Robustness of ULV Logic in 28nm UTBB FDSOI Technology. 2013 xxx. doi:10.1109/ISLPED.2013.6629305. http://hdl.handle.net/2078.1/152743

147. Kotipalli, Raja Venkata Ratan; Delamare, Romain; Henry, Frédéric; Proost, Joris; Flandre, Denis. Thermal stability analysis of DC-sputtered AL2O3 films for surface passivation of C-Si solar cells. In: Proceedings of the 28th European Photovoltaic Solar Energy Conference and exhibition (EU PVSEC 2013), 2013, 4 xxx. http://hdl.handle.net/2078.1/134291

148. de Streel, Guerric; Bol, David. Scaling Perspectives of ULV Microcontroller Cores to 28nm UTBB FDSOI CMOS. 2013 xxx. doi:10.1109/S3S.2013.6716553. http://hdl.handle.net/2078.1/152588

149. El Fissi, Lamia; Friedt, J-M.; Ballandras, S.; Francis, Laurent. Packaging Technologies for Love-wave-based Microbalance for Fluid Analysis. 2013 xxx. http://hdl.handle.net/2078.1/156173

150. Boufouss, El Hafed; Gérard, Pierre; Simon, Pascal; Francis, Laurent; Flandre, Denis. High Temperature and Radiation Hard CMOS SOI Sub-threshold Voltage Reference. In: Proceedings of the IEEE S3S Conference 2013, IEEE, 2013, 2 xxx. doi:10.1109/S3S.2013.6716543. http://hdl.handle.net/2078.1/134416

151. de Souza Fino, Leonardo Navarenho; Aparecida Guazzelli da Silveira, Marcilei; Renaux, Christian; Flandre, Denis; Gimenez, Salvador Pinillos. Comparative Experimental Study of X-Ray Radiation Effects in the Threshold Voltage between the OCTO and Conventional SOI nMOSFETs. 2013 xxx. http://hdl.handle.net/2078.1/157798

152. Bernard, Sébastien; Valentian, Alexandre; Belleville, Marc; Bol, David; Legat, Jean-Didier. An Efficient Metric of Setup Time for Pulsed Flip-Flops based on Output Transition Time. 2013 xxx. doi:10.1109/ICICDT.2013.6563291. http://hdl.handle.net/2078.1/152760

153. Novo, Carlo; Giacomini, Renato; Doria, Rodrigo; Afzalian, Aryan; Flandre, Denis. Back-gate Bias Influence on the Operation of Lateral SOI PIN Photodiodes at High Temperatures. In: Proceedings of the 2013 EUROSOI Conference, 2013, p. 2 pages xxx. http://hdl.handle.net/2078.1/122648

154. Afzalian, Aryan; Flandre, Denis. NEGF Computational study if Advanced Nanoscale FET Biosensors for Single DNA Molecule Detection. In: Proceedings of the 2013 Silicon Nanoelectronics Workshop, 2013, 2 xxx. http://hdl.handle.net/2078.1/131312

155. Melinte, Sorin; Iordanescu, Andra-Gabriela; Dutu, Constantin Augustin; Flandre, Denis; Faniel, Sébastien; Rodrigues Martins, Frederico; Hackens, Benoît. Fabrication, electrical characterization and scanning gate microscopy of Schottky silicon nanowire devices. In: Bulletin of the American Physical Society, 2013, 1 xxx. http://hdl.handle.net/2078.1/128610

156. Afzalian, Aryan; Lherbier, Aurélien; Charlier, Jean-Christophe; Flandre, Denis. Multiscale Simulation of Epoxide Adsorbate Functionalization on Graphene Nanoribbons. In: Proceedings of the 16th International Workshop on Computational Electronics, 2013, 978-3-901578-26-7, p. 40-41 xxx. http://hdl.handle.net/2078.1/131176

157. Gkotsis, Petros; Raskin, Jean-Pierre. DAMPING MECHANISMS IN LORENTZ FORCE BASED MEMS MAGNETIC FIELD SENSORS. 2013 xxx. http://hdl.handle.net/2078.1/135313

158. de Souza Fino, Leonardo Navarenho; Aparecida Guazzelli da Silveira, Marcilei; Renaux, Christian; Flandre, Denis; Pinillos Gimenez, Salvador. Total Ionizing Dose Effects on the Digital performance of Irradiated OCTO and Conventional Fully Depleted SOI MOSFET. 2013 xxx. http://hdl.handle.net/2078.1/152090

159. Kilchytska, Valeriya; Makovejev, Sergej; Md Arshad, Mohd Khairuddin; Raskin, Jean-Pierre; Flandre, Denis; Andrieu, François; Poiroux, T.; Faynot, O.. Perspectives of UTBB FD SOI MOSFETs for analog and RF applications. In: Proceedings of the 2nd Ukrainian-French Seminar "Semiconductor on Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, and 7th International Workshop "Functional Nanomaterials and Devices", 2013 xxx. http://hdl.handle.net/2078.1/130508

160. Makovejev, Sergej; Kazemi Esfeh, Babak; Andrieu, François; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. Global Variability of UTBB MOSFET in Subthreshold. In: Proceedings of the IEEE S3S Conference 2013, 2013, 2 xxx. doi:10.1109/S3S.2013.6716585. http://hdl.handle.net/2078.1/140977

161. Dell'Elce, Lamberto; Kerschen, Gaetan; Delabie, Tjorven; Vandepitte, dirk; Fleury-Frenette, Karl; Lecat, Jean-Hervé; Walewyns, Thomas; Francis, Laurent. Scientific and technological Payloads Aboard the B3LSat CubeSat of the QB50 Network. In: proceedings of the 2nd IAA Conference on University Satellite Missions and Cubesat Workshop, 2013, 12 pages xxx. http://hdl.handle.net/2078.1/123489

162. Bernard, Sébastien; Valentian, Alexandre; Belleville, Marc; Bol, David; Legat, Jean-Didier. Design of a Robust and Ultra-Low-Voltage Pulse-Triggered Flip-Flop in 28nm UTBB-FDSOI Technology. 2013 xxx. doi:10.1109/S3S.2013.6716555. http://hdl.handle.net/2078.1/152759

163. Navarenho de Souza Fino, Leonardo; Guazzelli da Silveira, Marcilei Aparecida; Renaux, Christian; Flandre, Denis; Gimenez, Salvador Pinillos. Improving the X-ray radiation tolerance of the analog ICs by using OCTO layout style. In: Proceedings of SBMicro 2013, IEEE, 2013, 978-1-4799-0516-4, 1-4 xxx. doi:10.1109/SBMicro.2013.6676166; 10.1109/SBMicro.2013.6676166. http://hdl.handle.net/2078.1/157872

164. Ray Chaudhuri, Ashesh; Helin, P.; Severi, S.; Van Hoof, R.; Du Bois, B.; Tilmans, H.; Francis, Laurent; Witvrouw, A.. Ultra-Narrow, High Aspect Ratio Trenches for Use in Miniaturized Poly-Sige Accelerometers. 2013 xxx. http://hdl.handle.net/2078.1/141583

165. Zhao, Hui; Zhou, Yongbin; Standaert, François-Xavier; Zhang, Hailong. Systematic Construction and Comprehensive Evaluation of Kolmogorov-Smirnov Test Based Side-Channel Distinguishers. In: Proceedings of Information Security Practice and Experience - 9th International Conference (ISPEC 2013) (Lecture Notes in Computer Science), Springer-Verlag: Berlin Heidelberg, 2013, 978-3-642-38032-7, p. 336-352 xxx. doi:10.1007/978-3-642-38033-4_24. http://hdl.handle.net/2078.1/133728

166. Nemer, J.P.; de Souza, Michelly; Flandre, Denis; Pavanello, Marcelo Antonio. Low frequency noise in submicron Graded-Channel SOI MOSFETs. 2013 xxx. doi:10.1109/SBMicro.2013.6676173. http://hdl.handle.net/2078.1/152073

167. Al Kadi Jazairli, Mohamad; Flandre, Denis. An Ultra-Low-Power UWB IR pulse receiver using 65nm CMOS technology. In: Proceedings de 2013 IEEE Faible Tension Faible Consommation (FTFC 2013), IEEE, 2013, 978-1-4673-6105-7, p. 1-4 xxx. doi:10.1109/FTFC.2013.6577758. http://hdl.handle.net/2078.1/134791

168. Makovejev, Sergej; Kazemi Esfeh, Babak; Andrieu, François; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. Threshold Voltage Extraction Techniques and Temperature Effect in Context of Global Variability in UTBB MOSFETs. In: Proceedings of the 43rd European Solid-State Device Research Conference (ESSDERC 2013), 2013, 4 xxx. doi:10.1109/ESSDERC.2013.6818852. http://hdl.handle.net/2078.1/140997

169. Gkotsis, Petros; Zeb, Gul; Pardoen, Thomas; Raskin, Jean-Pierre. A method to determine the elastic properties and the residual stress in the functional films of microcantilever gas sensors. 2013 xxx. http://hdl.handle.net/2078.1/135310

170. Said, M.H.; Tounsi, F.; Masmoudi, M.; Gkotsis, Petros; Francis, Laurent. A MEMS resonant magnetometer based on capacitive detection. In: Proceedings of the 10th International Multi-Conference on Systems, Signals and Devices (SSD 2013), IEEE, 2013, 978-146736458-4, p. 1-5 xxx. doi:10.1109/SSD.2013.6564153. http://hdl.handle.net/2078.1/133649

171. Bol, David; De Vos, Julien; Botman, François; de Streel, Guerric; Bernard, Sébastien; Flandre, Denis; Legat, Jean-Didier. Green SoCs for a sustainable Internet-of-Things. In: Faible Tension Faible Consommation (FTFC), 2013 IEEE, 2013, 978-1-4673-6105-7, p. 4 pages xxx. doi:10.1109/FTFC.2013.6577767. http://hdl.handle.net/2078.1/134891

172. Novo, Carla; Giacomini, Renato; Afzalian, Aryan; Flandre, Denis. Operation of Lateral SOI Pin Photodiodes with Back-Gate Bias and Intrinsic Length Variation. In: Transactions of 223rd ECS Meeting, 2013 xxx. http://hdl.handle.net/2078.1/122663

173. André, Nicolas; Francis, Laurent@uclouvain.be; Bay, A.; Sarrazin, M.; Stolz, A.; Al Alam, E.; Giguère, A.; Belarouci, A.; Aimez, V.; Vigneron, Jean-Pol. Biomimetic overlayer inspired by firefly for LED light-extraction efficiency improvement. 2013 xxx. http://hdl.handle.net/2078.1/146852

174. Francis, Laurent; Gkotsis, Petros; Kilchytska, Valeriya; Tang, Xiaohui; Druart, Sylvain; Raskin, Jean-Pierre; Flandre, Denis. Impact of radiations on the electromechanical properties of materials and on the piezoresistive and capacitive transduction mechanisms used in microsystems. In: Proceedings of SPIE 8614, 2013 xxx. doi:10.1117/12.2008531. http://hdl.handle.net/2078.1/128608

175. Md Arshad, M.K.; Kilchytska, Valeriya; Emam, Mostafa; Andrieu, François; Flandre, Denis; Raskin, Jean-Pierre. Effect of parasitic elements on UTBB FD SOI MOSFET RF figures of merit. In: Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), IEEE, 2013, p. 2 xxx. http://hdl.handle.net/2078.1/124008

176. Afzalian, Aryan; Flandre, Denis. Advanced Nanoscale FET Biosensors: Route Towards Single Analyte Detection. In: Proceedings of the 2013 CMOS Emerging Technology Research Symposium, 2013 xxx. http://hdl.handle.net/2078.1/122668

177. Bouterfa, Mohamed; Alexandre, Geoffrey; Flandre, Denis; Cortina Gil, Eduardo. Charge Collection Mapping of a Novel Ultra-Thin Silicon Strip detector for Hadrontherapy Beam Monitoring. 2013, 1 xxx. http://hdl.handle.net/2078.1/152107

178. Rudenko, Tamara; Md Arshad, M.K.; Raskin, Jean-Pierre; Nazarov, Alexei; Flandre, Denis; Kilchytska, Valeriya. On the gm/ID-based Threshold Voltage Extractions in Advanced SOI MOSFETs. In: Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2013), IEEE, 2013, p. 2 xxx. http://hdl.handle.net/2078.1/124013

179. de Souza, Michelly; Flandre, Denis; Pavanello, Marcelo Antonio. Channel length influence on the analog characteristics of asymmetric self-cascode association of SOI transistors. 2013 xxx. doi:10.1109/SBMicro.2013.6676154. http://hdl.handle.net/2078.1/152057

180. Stoukatch, Sergei; Walewyns, Thomas; Tooten, Ester; Axisa, Fabrice; Francis, Laurent; Destine, Jacques. Chemically resistant encapsulant to enable a novel MEMS fabrication process. 2013 xxx. http://hdl.handle.net/2078.1/141585

181. Rasson, Jonathan; Couniot, Numa; Van Overstraeten, Nancy; Francis, Laurent; Flandre, Denis. Biofunctionalization of a biosensor for an improved detection of Staphylococcus aureus. 2013 xxx. http://hdl.handle.net/2078.1/147055

182. Stas, François; Kuti Lusala, Angelo; Legat, Jean-Didier; Bol, David. Investigation of the Routing Algorithm in a De Bruijn-based NoC for Low-Power Applications. 2013 xxx. doi:10.1109/FTFC.2013.6577761. http://hdl.handle.net/2078.1/152772

183. Bouterfa, Mohamed; Aouadi, Khaled; Flandre, Denis; Cortina Gil, Eduardo. Characterization of Ultra-Thin Silicon Strip Detectors for Hardontherapy Beam Monitoring. In: Proceedings of the IEEE Instrumentation and Measurement Technology Conference 2013 (I2MTC 2013), IEEE, 2013, p. 1088-1091 xxx. http://hdl.handle.net/2078.1/134705

184. Kilchytska, Valeriya; Md Arshad, Mohd Khairuddin; Makovejev, Sergej; Olsen, S.; Andrieu, F.; Poiroux, T.; Faynot, O.; Raskin, Jean-Pierre. Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit. In: Solid-State Electronics. Vol. 70, p. 50-58 (avril 2012). Pergamon: (United Kingdom) Kidlington, 2012 xxx. doi:10.1016/j.sse.2011.11.020. http://hdl.handle.net/2078.1/115007

185. Garduño, Salvador I.; Cerdeira, Antonio; Estrada, Magali; Kilchytska, Valeriya; Flandre, Denis. Analytic modeling of gate tunneling currents for nano-scale double-gate MOSFETs. In: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012), IEEE, 2012, 978-1-4577-1116-9, 1-5 xxx. doi:10.1109/ICCDCS.2012.6188938; 10.1109/ICCDCS.2012.6188938. http://hdl.handle.net/2078.1/114995

186. Flandre, Denis; Bulteel, Olivier; Gosset, Geoffroy; Rue, Bertrand; Bol, David. Disruptive design techniques based on ultra-low-leakage CMOS blocks for ultra-low-power circuits and microsystems. In: Proceedings of the VII Workshop on Semiconductor and Micro & Nano Technology, SEMINATEC 2012, 2012 xxx. http://hdl.handle.net/2078.1/129393

187. Flandre, Denis; Bulteel, Olivier; Gosset, Geoffroy; Rue, Bertrand; Bol, David. Ultra-low-power analog and digital circuits and microsystems using disruptive ultra-low-leakage design techniques. In: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012), IEEE, 2012, 978-1-4577-1116-9, 1-2 xxx. doi:10.1109/ICCDCS.2012.6188884; 10.1109/ICCDCS.2012.6188884. http://hdl.handle.net/2078.1/115002

188. de Souza, Michelly; Kilchytska, Valeriya; Flandre, Denis; Pavanello, Marcelo Antonio. Liquid Helium Temperature Operation of Graded-Channel SOI nMOSFETs. In: ECS Transactions. Vol. 49, no. 1, p. 135-144 (2012). Electrochemical Society, Inc. 2012 xxx. http://hdl.handle.net/2078.1/123987

189. Van Overstraeten-Schlögel, Nancy; Lefèvre, O.; Couniot, Numa; Flandre, Denis. A magnetic-based approach for improving the specificity and sensibility of electronics biosensors in diagnostic field. In: Proceedings of the 2012 IEEE-EMBS Micro- and Nanoengineering in Medicine Conference (MNMC 2012), IEEE, 2012, 1 xxx. http://hdl.handle.net/2078.1/124349

190. Nemer, J.P.; De Souza, Michelly; Pavanello, Marcelo Antonio; Flandre, Denis. Analog performance of submicron GC SOI MOSFETs. In: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012), IEEE, 2012, 978-1-4577-1116-9, 1-4 xxx. doi:10.1109/ICCDCS.2012.6188930; 10.1109/ICCDCS.2012.6188930. http://hdl.handle.net/2078.1/115003

191. Poncelet, Olivier; Francis, Laurent. Synthesis of a bio-inspired multilayer photonic crystal using ALD. In: Proceedings du 5ème Colloque du Laboratoire Nanotechnologies et Nanosystèmes (LN2), 2012 xxx. http://hdl.handle.net/2078.1/114308

192. Afzalian, Aryan; Couniot, Numa; Flandre, Denis. Detection Limit of ultra-scaled Nanowire Biosensors. In: Proceedings of the 2012 SISPAD Conference, 2012, 165-168 xxx. http://hdl.handle.net/2078.1/122632

193. De Souza, Michelly; Pavanello, Marcelo Antonio; Flandre, Denis. Analog performance of asymmetric self-cascode p-channel fully depleted SOI transistors. In: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012), IEEE, 2012, 978-1-4577-1116-9, 1-4 xxx. doi:10.1109/ICCDCS.2012.6188932; 10.1109/ICCDCS.2012.6188932. http://hdl.handle.net/2078.1/114996

194. Botman, François; Bol, David; Legat, Jean-Didier. Data-dependent operation speed-up through automatically-inserted signal transition detectors for ultra-low voltage logic circuits. 2012 xxx. doi:10.1109/SubVT.2012.6404309. http://hdl.handle.net/2078.1/118631

195. Rudenko, Tamara; Nazarov, Alexei; Kilchytska, Valeriya; Flandre, Denis. Revision of interface coupling in ultra-thin body SOI MOSFETs. In: Book of Abstracts of the International Conference "Micro- and Nanoelectronics-2012" (ICMNE-2012), 2012, 1 xxx. http://hdl.handle.net/2078.1/123969

196. Md Arshad, M.K.; Kilchytska, Valeriya; Makovejev, Sergej; Olsen, S.H.; Andrieu, François; Raskin, Jean-Pierre; Flandre, Denis. UTBB SOI MOSFETs analog figures of merit: effect of ground plane and asymmetric double-gate regime. In: Proceedings of the Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’12, 2012, 111-112 xxx. http://hdl.handle.net/2078/123601

197. Flandre, Denis; Kilchytska, Valeriya; Alvarado, José Joaquin; Boufouss, El Hafed; Rue, Bertrand; Roda Neve, Cesar; Raskin, Jean-Pierre; Francis, Laurent. Harsh-environment behaviours and performances of advanced Silicon-on-Insulator CMOS sensors, transistors and circuits. 2012 xxx. http://hdl.handle.net/2078.1/129624

198. Makovejev, Sergej; Olsen, S.H.; Md Arshad, K.; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. Improvement of high-frequency FinFET performance by fin width engineering. In: Proceedings of the IEEE 2012 International SOI Conference (SOI’12), IEEE, 2012, 978-1-4673-2690-2, 58-59 xxx. doi:10.1109/SOI.2012.6404381. http://hdl.handle.net/2078/123739

199. Flandre, Denis; Kilchytska, Valeriya; Alvarado Pulido, José Joaquin. Harsh-environment Behaviours and Performances of Advanced Silicon-on-Insulator CMOS Transistors. 2012 xxx. http://hdl.handle.net/2078.1/124025

200. Gkotsis, Petros; Kilchytska, Valeriya; Militaru, Otilia; Berger, Guy; Fragkiadakis, Charalampos; Kirby, Paul; Raskin, Jean-Pierre; Flandre, Denis; Francis, Laurent. Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems. In: Proceedings of the 12th International Symposium on Materials in the Space Environment (ISME'12), 2012, 8 xxx. http://hdl.handle.net/2078/123863

201. Van Langendonck, Renaud; Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. MPSoCDK: A framework for prototyping and validating MPSoC projects on FPGAs. In: Reconfigurable Communication-centric Systems-on-Chip (ReCoSoC), 2012 7th International Workshop on, 2012, 978-1-4673-2570-7, p. 1-8 xxx. doi:10.1109/ReCoSoC.2012.6322891. http://hdl.handle.net/2078.1/117483

202. De Vos, Julien; Flandre, Denis; Bol, David. A Dual-Mode DC/DC Converter for Ultra-Low-Voltage Microcontrollers. In: Proceedings of the 2012 IEEE Subthreshold Microelectronics Conference (SubVT), IEEE, 2012, 978-1-4673-1586-9, 1-3 xxx. doi:10.1109/SubVT.2012.6404306. http://hdl.handle.net/2078.1/123834

203. Kotipalli, Raja Venkata Ratan; Delamare, Romain; Haslinger, M.; Francis, Laurent; Flandre, Denis. Passivation study of aluminium oxide deposited by atomic layer deposition. In: Posters session of the 2012 Photovoltaic Technical Conference (PVTC 2012), 2012 xxx. http://hdl.handle.net/2078.1/123886

204. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. A Hybrid NoC Combining SDM-TDM Based Circuit-switching with Packet-switching for Real-Time Applications. In: New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International Conference, 2012, 978-1-4673-0857-1, p. 17-20 xxx. doi:10.1109/NEWCAS.2012.6328945. http://hdl.handle.net/2078.1/117482

205. Saharil, Farizah; El Fissi, Lamia; Liu, Yitong; Calborg, Fredrik; Vandormael, Denis; Francis, Laurent; van der Wijngaart, Wouter; Haraldsson, Tommy. Superior dry bonding of off-stoichiometry thiol-ene-epoxy (OSTE(+)) polymers for heterogeneous material labs-on-chip. In: Proceedings of the 16th International Conference on Miniaturized Systems for Chemistry and Life Sciences, 2012, 978-0-9798064-5-2, p. 1831-1833 xxx. http://hdl.handle.net/2078.1/128314

206. Walewyns, Thomas; Francis, Laurent. Modeling the sensing behavior of a MEMS field ionization device coupled with capacitive actuation. In: Proceedings of the 2012 IEEE Sensors Conference, IEEE, 2012, 978-1-4577-1766-6, p. 4 xxx. doi:10.1109/ICSENS.2012.6411421. http://hdl.handle.net/2078.1/124445

207. Van Loo, Stéphanie; Stoukatch, Serguei; Axisa, Fabrice; Destiné, Jacques; Van Overstraeten, Nancy; Flandre, Denis; Lefèvre, Olivia; Mertens, Pascal. Low temperature assembly method of microfluidic bio-molecules detection device. In: Proceedings of the 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2012), IEEE, 2012, 978-1-4673-0743-7, 181-184 xxx. doi:10.1109/LTB-3D.2012.6238086; 10.1109/LTB-3D.2012.6238086. http://hdl.handle.net/2078.1/114332

208. Alvarado, J.; Tinoco, J.C.; Kilchytska, Valeriya; Flandre, Denis; Raskin, Jean-Pierre; Cerdeira, Antonio; Contreras, E.. Compact small-signal model for RF FinFETs. In: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2012), IEEE, 2012, 978-1-4577-1116-9, 1-4 xxx. doi:10.1109/ICCDCS.2012.6188936; 10.1109/ICCDCS.2012.6188936. http://hdl.handle.net/2078.1/115001

209. Renauld, Mathieu; Kamel, Dina; Standaert, François-Xavier; Flandre, Denis. Information Theoretic and Security Analysis of a 65-Nanometer DDSLL AES S-Box. In: Lecture Notes in Computer Science, Springer, 2012, 223-239 xxx. doi:10.1007/978-3-642-23951-9_15. http://hdl.handle.net/2078.1/110632

210. Makovejev, Sergej; Olsen, S.; Andrieu, F.; Poiroux, T.; Faynot, O.; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. On extraction of self-heating features in UTBB SOI MOSFETs. In: Proceedings of the 13th International Conference on Ultimate Integration on Silicon (ULIS 2012), IEEE, 2012, 978-1-4673-0191-6, 109-112 xxx. doi:10.1109/ULIS.2012.6193369; 10.1109/ULIS.2012.6193369. http://hdl.handle.net/2078.1/114993

211. de Streel, Guerric; Bol, David; Legat, Jean-Didier. Multi-VT ultra-low-power FPGA implementation in 65nm CMOS technology. In: Faible Tension Faible Consommation (FTFC), 2012 IEEE, 2012, 978-1-4673-0822-9, p. 4 pages xxx. doi:10.1109/FTFC.2012.6231745. http://hdl.handle.net/2078.1/124567

212. Kotipalli, Raja Venkata Ratan; Delamare, Romain; Francis, Laurent; Flandre, Denis. Study of passivation mechanisms induced by negative charge Al2O3 films. In: Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2012), 2012, 3 xxx. http://hdl.handle.net/2078.1/124064

213. Md Arshad, M.K.; Emam, Mostafa; Kilchytska, Valeriya; Andrieu, François; Flandre, Denis; Raskin, Jean-Pierre. RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs. In: Proceedings of the 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of papers (SiRF 2012), IEEE, 2012, 978-1-4577-1318-7, 105-108 xxx. doi:10.1109/SiRF.2012.6160155. http://hdl.handle.net/2078.1/115016

214. Flandre, Denis; Bulteel, Olivier; Gosset, Geoffroy; Haddad, Pierre-Antoine; Bernard, Sébastien; Rue, Bertrand; Bol, David. Disruptive ultra-low-leakage design techniques for ultra-low-power CMOS circuits. In: Proceedings of the CMOS Emerging Technologies Conference, 2012, 978-0-9878676-1-2 xxx. http://hdl.handle.net/2078.1/129374

215. de Souza, Michelly; Kilchytska, Valeriya; Flandre, Denis; Pavanello, Marcelo Antonio. Liquid Helium Temperature Analog Operation of Asymmetric Self-Cascode FD SOI MOSFETs. In: Proceedings of the 2012 IEEE International SOI Conference, IEEE, 2012, 978-1-4673-2691-9, 2 xxx. doi:10.1109/SOI.2012.6404377. http://hdl.handle.net/2078.1/123910

216. Navarenho de Souza Fino, L.; Renaux, Christian; Flandre, Denis; Pinillos Gimenez, S.. Experimental Study of the OCTO SOI nMOSFET to Improve the Device Performance. In: Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), 2012, 55-56 xxx. http://hdl.handle.net/2078.1/129588

217. Francis, laurent; Druart, Sylvain; André, Nicolas; Gkotsis, Petros; Flandre, Denis; Raskin, Jean-Pierre. Magnetic sensors enabled by MEMS and SOI technologies. In: Proceedings of the CMOS Emerging Technologies Conference, 2012, 978-0-9878676-1-2 xxx. http://hdl.handle.net/2078.1/129383

218. Bouterfa, Mohamed; Flandre, Denis. Ultra-Thin Silicon Strip Detectors for Hadrontherapy Beam Monitoring. In: Proceedings of the IEEE International Conference on Electron Devices and Soli State Circuits (EDSSC 2012), IEEE, 2012, 2 xxx. http://hdl.handle.net/2078.1/123854

219. de Souza, Michelly; Flandre, Denis; Pavanello, Marcelo Antonio. Comparison of Asymmetric Self-Cascode and Graded-Channel Structures for High Performance Analog SOI MOSFETs. In: Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012), 2012 xxx. http://hdl.handle.net/2078.1/129621

220. Bol, David; De Vos, Julien; Hocquet, Cédric; Durvaux, François; Botman, François; Boyd, Sarah; Flandre, Denis; Legat, Jean-Didier. A 25MHz 7μW/MHz Ultra-Low-Voltage Microcontroller SoC in 65nm LP/GP CMOS for Low-Carbon Wireless Sensor Nodes. In: IEEE International Solid State Circuits Conference. Digest of Technical Papers. Vol. 55, no. 1, p. 490-491 (February 2012). I E E E, 2012 xxx. doi:10.1109/ISSCC.2012.6177104. http://hdl.handle.net/2078.1/109982

221. Bol, David; Kilchytska, Valeriya; De Vos, Julien; Andrieu, François; Flandre, Denis. Quasi-Double Gate Mode for Sleep Transistors in UTBB FD SOI Low-Power High-Speed Applications. In: Proceedings of the 2012 IEEE International SOI Conference, IEEE, 2012, 978-1-4673-2690-2, 2 xxx. doi:10.1109/SOI.2012.6404370. http://hdl.handle.net/2078.1/123841

222. Rudenko, Tamara; Nazarov, Alexei; Kilchytska, Valeriya; Flandre, Denis. Threshold voltage of advanced MOSFETs: Physical criteria and experimental extraction methods. In: Book of Abstracts of the International Conference "Micro- and Nanoelectronics-2012" (ICMNE-2012), 2012, 1 xxx. http://hdl.handle.net/2078.1/123964

223. Kilchytska, Valeriya; Andrieu, François; Flandre, Denis. On the UTBB SOI MOSFET Performance Improvement in Quasi-Double-Gate Regime. In: Proceedings of the 2012 European Solid-State Device Research Conference (ESSDERC 2012), IEEE, 2012, 978-1-4673-1707-8, 246-249 xxx. doi:10.1109/ESSDERC.2012.6343379. http://hdl.handle.net/2078.1/123914

224. Rocha-Gaso, Maria Isabel; March, C.; Garcia, J.-V.; El Fissi, Lamia; Francis, Laurent; Jimenez, Y.; Montoya, A.; Arnaud, A.. User-friendly love wave flow cell for biosensors. 2012 xxx. http://hdl.handle.net/2078.1/141565

225. Van Overstraeten-Schlögel, Nancy; Lefèvre, O.; Flandre, Denis. Assessment of different functionalization methods for grafting a protein to an alumina-covered biosensor. In: Proceedings of the 2012 IEEE-EMBS Micro- and Nanoengineering in Medicine Conference (MNMC 2012), IEEE, 2012, 1 xxx. http://hdl.handle.net/2078.1/124352

226. Fino, Leonardo; Renaux, Christian; Gimenez, Salvador; Flandre, Denis. Using OCTO SOI nMOSFET to Reduce Die Area of Analog Integrated Circuits. In: Proceedings of the VII Workshop on Semiconductor and Micro & Nano Technology, SEMINATEC 2012, 2012 xxx. http://hdl.handle.net/2078.1/129579

227. Couniot, Numa; Flandre, Denis; Francis, Laurent; Afzalian, Aryan. Bacteria detection with interdigitated microelectrodes: noise consideration and design optimization. In: Procedia Engineering of the 2012 EUROSENSORS conference, Elsevier Ltd. 2012, 188-191 xxx. doi:10.1016/j.proeng.2012.09.115. http://hdl.handle.net/2078.1/119947

228. Ray Chaudhuri, Ashesh; Severi, S.; Erismis, M/Akif; Francis, Laurent; Witvrouw, A.. SiGe MEMS Accelerometers Combining a Large Bandwidth with a High Capacitive Sensitivity. In: Proceedings of the 26th European Conference on Solid-State Transducers (Eurosensors 2012), 2012 xxx. doi:10.1016/j.proeng.2012.09.254. http://hdl.handle.net/2078.1/114310

229. Kilchytska, Valeriya; Raskin, Jean-Pierre; Flandre, Denis. UTBB FDSOI and SOI FinFET device assessment for future analog/RF applications. 2012 xxx. http://hdl.handle.net/2078.1/124021

230. El Fissi, Lamia; Vanden Bulcke, Mathieu; Guillemet, S.; Dortu, F.; Vandormael, Denis; Emmerechts, C.; Beekman, E.; Francis, Laurent. Cyclic Olefin Copolymer (COC) microfluidic systems: fabrication and bonding. 2012 xxx. http://hdl.handle.net/2078.1/156177

231. Bassu, Margherita; Strambini, Lucanos Marsilio; Barillaro, Giuseppe. Towards MEMS Fabrication by Silicon Electrochemical Micromachining Technology. 2011 xxx. http://hdl.handle.net/2078.1/87703

232. Flandre, Denis. Extreme-environment behaviours and performances of advanced Silicon-on-Insulator CMOS sensors, transistors and circuits. In: Proceedings of the Second International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA’11), 2011 xxx. http://hdl.handle.net/2078.1/106402

233. Soung Yee, Lawrence; Martin, Elena; Cortina Gil, Eduardo; Renaux, Christian; Flandre, Denis. Charge Sensitive Amplifier Study in 2μm FD SOI CMOS. In: Proceedings of the IEEE International SOI Conference (SOI 2011), 2011 xxx. doi:10.1109/SOI.2011.6081694. http://hdl.handle.net/2078.1/106345

234. Bol, David; Boyd, S.; Dornfeld, D;. Application-aware LCA of semiconductors: life-cycle energy of microprocessors from high-performance 32nm CPU to ultra-low-power MCU. 2011 xxx. doi:10.1109/ISSST.2011.5936883. http://hdl.handle.net/2078.1/87615

235. Ranvier, S.; Paquay, Stéphane; Requier, Sébastien; Lamy, hervé; Rochus, Véronique; Francis, Laurent; Rochus, Pierre. Influence of multiphysics couplings on the performance of a MEMS magnetometer. 2011 xxx. doi:10.1109/ESIME.2011.5765803. http://hdl.handle.net/2078.1/141571

236. Van Overstraeten, Nancy; Dupuis, Pascal; Lefèvre, O.; Magnin, Delphine; Demoustier-Champagne, Sophie; Jonas, Alain M.; Heusdens, B.; Stoukatch, S.; Van Loo, S.; Flandre, Denis. Immunoassay using a biofunctionnalized alumina-coated capacitive biosensor: towards a detection of the H5N1 Influenza virus in microfluidics. In: Proceedings of the International Bio-Sensing Technology Conference (BITE), 2011 xxx. http://hdl.handle.net/2078.1/87459

237. De Vos, Julien; Flandre, Denis; Bol, David. Variability and ripple analysis of an on-chip all-digital AVS system. 2011 xxx. http://hdl.handle.net/2078.1/87600

238. Couniot, Numa; Afzalian, Aryan; Francis, Laurent; Flandre, Denis. Simulation of noise due to random configurations of biomolecules on capacitive biosensors. In: Proceedings of the IEEE EMBS, 2011 xxx. http://hdl.handle.net/2078.1/106405

239. Flandre, Denis; Bulteel, Olivier; Gosset, Geoffroy; Rue, Bertrand; Bol, David. Disruptive ultra-low-leakage design techniques for ultra-low-power mixed-signal microsystems. 2011 xxx. doi:10.1109/FTFC.2011.5948908. http://hdl.handle.net/2078.1/87166

240. De Souza, Michelly; Rue, Bertrand; Flandre, Denis; Pavanello, Marcelo Antonio. Performance of Ultra-Low-Power SOI CMOS Diodes Operating at Low Temperatures. In: Proceedings of the 219th ECS Meeting, 2011 xxx. http://hdl.handle.net/2078.1/87435

241. Bol, David; Bernard, Sébastien; Flandre, Denis. Pre-Silicon 22/20 nm Compact MOSFET Models for Bulk vs. FD SOI Low-Power Circuit Benchmarks. In: Proceedings of the IEEE International SOI Conference (SOI 2011), 2011 xxx. doi:10.1109/SOI.2011.6081697. http://hdl.handle.net/2078.1/106357

242. André, Nicolas; Francis, Laurent; Rue, Bertrand; Druart, Sylvain; Dupuis, Pascal; Flandre, Denis; Raskin, Jean-Pierre. Ultra low power SOI transducer for flow and dew-based humidity sensing. In: Proceedings of the 2011 CMOS Emerging Technologies Workshop, 2011, session 1-D, paper 6 xxx. http://hdl.handle.net/2078.1/86632

243. Afzalian, Aryan; Flandre, Denis. Transport-Confined Multi-Barrier FETs: A New Paradigm for Low-Leakage High On-Current Transistors. In: Trans. of 219th ECS Symp.:Advanced Semiconductor-on-Insulator Technology and Related Physics 15. Vol. 35, no. 5, p. 295-300 (2011). In: Proceedings of the 219th ECS Meeting, The Electrochemical Society, 2011 xxx. doi:10.1149/1.3570809. http://hdl.handle.net/2078.1/86743

244. Renauld, Mathieu; Standaert, François-Xavier; Veyrat-Charvillon, Nicolas; Kamel, Dina; Flandre, Denis. A Formal Study of Power Variability Issues and Side-Channel Attacks for Nanoscale Devices. In: Lecture Notes in Computer Science. Vol. 6632, p. 109-128 (2011). Springer: (Germany) Heidelberg, 2011 xxx. doi:10.1007/978-3-642-20465-4_8. http://hdl.handle.net/2078.1/86611

245. Dupuis, Pascal; Van Overstraeten, Nancy; Raskin, Jean-Pierre; Francis, Laurent; Flandre, Denis. Some mitigations for unequal data variance in linear regression. In: Proceedings of the AMCTM conference, 2011 xxx. http://hdl.handle.net/2078.1/82405

246. Olbrechts, Benoit; Rue, Bertrand; Flandre, Denis; Raskin, Jean-Pierre. Innovative Frequency Output Pressure Sensor with Single SOI NMOSFET Suspended Transducer. In: Proceedings of the IEEE International SOI Conference(SOI 2011), 2011, 978-1-61284-761-0, 1-2 xxx. doi:10.1109/SOI.2011.6081790. http://hdl.handle.net/2078.1/106339

247. Makovejev, Sergej; Raskin, Jean-Pierre; Flandre, Denis; Olsen, S.; Andrieu, F.; Poiroux, T.; Kilchytska, Valeriya. Comparison of Small-Signal Output Conductance Frequency Dependence in UTBB SOI MOSFETs with and without Ground Plane. In: Proceedings of the IEEE International SOI Conference, 2011 xxx. doi:10.1109/SOI.2011.6081717. http://hdl.handle.net/2078.1/87388

248. Makovejev, Sergej; Kilchytska, Valeriya; Md Arshad, Mohd Khairuddin; Flandre, Denis; Andrieu, F.; Faynot, O.; Olsen, S.; Raskin, Jean-Pierre. Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices. In: Proceedings of the 12th International Conference on Ultimate Integration on Silicon – ULIS 2011, 2011, 130-133 xxx. doi:10.1109/ULIS.2011.5758009. http://hdl.handle.net/2078.1/86634

249. Bouterfa, Mohamed; Aouadi, Khaled; Bertrand, D.; Olbrechts, Benoit; Raskin, Jean-Pierre; Delamare, Romain; Cortina Gil, Eduardo; Flandre, Denis. Hadrontherapy beam monitoring: towards a new generation of ultra-thin p-type silicon strip detectors. In: Proceedings of the The Second International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications – ANIMMA’11, 2011, paper INV30 xxx. http://hdl.handle.net/2078.1/86649

250. André, Nicolas; Francis, Laurent; Raskin, Jean-Pierre; Nachergaele, P.; Vaassen, J.-M.; Civello, J.; Cases, S.; Paquay, S.; De Baetselier, E.. The integrated design of a MEMS-based flow-sensor system. In: Proceedings of the Smart System Integration 2011, 2011 xxx. http://hdl.handle.net/2078.1/86423

251. Bouterfa, Mohamed; Aouadi, Khaled; Bertrand, Damien; Olbrechts, Benoit; Delamare, Romain; Raskin, Jean-Pierre; Kilchytska, Valeriya; Cortina Gil, Eduardo; Flandre, Denis. Towards a New Generation of Ultra-Thin P-Type Silicon Strip Detectors for Hadrontherapy Beam Monitoring. In: Proceedings of ANIMMA, 2011 xxx. http://hdl.handle.net/2078.1/86629

252. Delavallée, Thibault; Manet, Philippe; Vandierendonck Hans; Legat, Jean-Didier. Embedding functional simulators in compilers for debugging and profiling. In: Faible Tension Faible Consommation (FTFC), 2011, 2011, 978-1-61284-646-0, p. 55 - 58 xxx. doi:10.1109/FTFC.2011.5948917. http://hdl.handle.net/2078.1/88911

253. Walewyns, Thomas; Scheen, Gilles; Tooten, Ester; Francis, Laurent. Synthesis of patterned freestanding Nickel nanowires by using ion track-etched polyimide. In: Bioelectronics, Biomedical and Bioinspired Systems V; and Nanotechnology V (Proceedings of SPIE), SPIE: Bellingham, WA, ETATS-UNIS, 2011, 978-0-8194-8657-8, p. 806815 xxx. http://hdl.handle.net/2078.1/112944

254. Alvarado Pulido, José Joaquin; Kilchytska, Valeriya; Boufouss, El Hafed; Flandre, Denis. Characterization and modeling of single event transients in LDMOS-SOI FETs. In: Proceedings of the 22nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2011, 2011 xxx. http://hdl.handle.net/2078.1/129897

255. Bol, David; Hocquet, Cédric; De Vos, Julien; Durvaux, François; Botman, François; Flandre, Denis; Legat, Jean-Didier. Design techniques for reliable timing closure in ULV SoCs. 2011 xxx. http://hdl.handle.net/2078.1/88714

256. André, Nicolas; Francis, Laurent; Raskin, Jean-Pierre; Nachtergaele, P.; Cases, S.; Paquay, S.; De Batselier, E.; Flandre, Denis. The integrated design of a MEMS-based flow-sensor system. In: Proceedings of the The 9th International Nanotech Symposium & Exhibition in Korea - NANO KOREA 2011, 2011 xxx. http://hdl.handle.net/2078.1/86646

257. Rudenko, T.; Kilchytska, Valeriya; Md Arshad, Mohd Khairuddin; Raskin, Jean-Pierre; Nazarov, A.; Flandre, Denis. Influence of drain voltage on MOSFET threshold voltage determination by transconductance change and gm/Id methods. In: Proceedings of the 12th International Conference on Ultimate Integration on Silicon – ULIS 2011, 2011, 150-153 xxx. http://hdl.handle.net/2078.1/86635

258. Kilchytska, Valeriya; Md Arshad, Mohd Khairuddin; Makojev, S.; Olsen, S.; Andrieu, F.; Faynot, O.; Raskin, Jean-Pierre; Flandre, Denis. Ultra-thin body and BOX SOI Analog Figures of Merit. In: Proceedings of the Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’11, 2011, 143-144 xxx. http://hdl.handle.net/2078.1/86316

259. Kilchytska, Valeriya; Andrieu, F.; Faynot, O.; Flandre, Denis. High-temperature perspectives of UTB SOI MOSFETs. In: Proceedings of the 2011 Ultimate Integration of Silicon Conference (ULIS 2011), 2011 xxx. doi:10.1109/ULIS.2011.5758013. http://hdl.handle.net/2078.1/87392

260. Delamare, Romain; Yedji, Mourad; Demarche, Julien; Terwagne, Guy; Flandre, Denis. High density array of size controlled silicon nanodots for all Si solar cells. In: Proceedings of the 26th European Photovoltaic solar energyconference, 2011 xxx. http://hdl.handle.net/2078.1/87255

261. De Vos, Julien; Bol, David; Flandre, Denis. Design methodology for sizing DCDC converters supplying subthreshold circuits. In: Proceedings of the IEEE Subthreshold Microelectronics Conference, 2011 xxx. http://hdl.handle.net/2078.1/87565

262. De Souza, Michelly; Flandre, Denis; Pavanello, Marcelo Antonio. Asymmetric Self-Cascode Configuration to Improve the Analog Performance of SOI nMOS Transistors. In: Proceedings of the IEEE International SOI Conference (SOI 2011), 2011, 978-1-61284-761-0, 1-2 xxx. doi:10.1109/SOI.2011.6081716. http://hdl.handle.net/2078.1/106361

263. Tang, Xiaohui; Francis, Laurent; Haslinger, Michaël; Delamare, Romain; Flandre, Denis; Simonis, Pierre; Vigneron, Jean-Pol; Deschaume, Olivier; Jonas, Alain M.; Raskin, Jean-Pierre. Replication of butterfly wings by ALD and nanoimprint for production of Si solar cells with high light absorption surface. In: Proceedings of the 11th International Conference on Atomic Layer Deposition – ALD 2011, 2011 xxx. http://hdl.handle.net/2078.1/86641

264. Olbrechts, Benoit; Rue, Bertrand; Pardoen, Thomas; Flandre, Denis; Raskin, Jean-Pierre. A novel approach for active pressure sensors in thin film SOI technology. In: Proceedings of the International conference Eurosensors XXV, 2011 xxx. http://hdl.handle.net/2078.1/106333

265. Bulteel, Olivier; Van Overstraeten, Nancy; Dupuis, Pascal; Flandre, Denis. Complete Microsystem Using SOI Photodiode for DNA Concentration Measurement. In: Proceedings of the Biomedical Circuits and Systems Conference (BioCAS), 2011 xxx. http://hdl.handle.net/2078.1/87439

266. Hocquet, Cédric; Botman, François; Legat, Jean-Didier; Bol, David. A near-threshold instruction cache with zero miss overhead time for dual-Vdd microcontrollers. 2011 xxx. http://hdl.handle.net/2078.1/88708

267. Francis, Laurent; Fréchette, Luc. L'apprentissage par projet des microsystèmes électro-mécaniques. In: Proceedings de la conférence CETSIS 2011, 2011 xxx. http://hdl.handle.net/2078.1/92304

268. Delavallée, Thibault; Manet, Philippe; Loiselle, Igor; Vandierendonck Hans; Legat, Jean-Didier. Application-based workload model for wireless sensor node computing platforms. In: Faible Tension Faible Consommation (FTFC), 2011, 2011, 978-1-61284-646-0, 35 - 38 xxx. doi:10.1109/FTFC.2011.5948912. http://hdl.handle.net/2078.1/88910

269. Botman, François; Bol, David; Hocquet, Cédric; Legat, Jean-Didier. Exploring the Opportunity of Operating a COTS FPGA at 0.5V. 2011 xxx. http://hdl.handle.net/2078.1/88715

270. Vergeylen, Daniel; Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. A new mechanism to reduce congestion on TDM networks-on-chips. In: Reconfigurable Communication-centric Systems-on-Chip (ReCoSoC), 2011 6th International Workshop on, 2011, 978-1-4577-0640-0, 1-8 xxx. http://hdl.handle.net/2078.1/88698

271. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. A SDM-TDM based circuit-switched router for on-chip networks. In: Reconfigurable Communication-centric Systems-on-Chip (ReCoSoC), 2011 6th International Workshop on, 2011, 978-1-4577-0640-0, 1-8 xxx. http://hdl.handle.net/2078.1/88697

272. Pollissard, Guillaume; Flandre, Denis. A circuit level 65nm node bulkand SOI technologies comparison for analog amplifiers. In: Proceedings of the Seventh Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2011), 2011 xxx. http://hdl.handle.net/2078.1/87433

273. Tang, Xiaohui. Rapid and selective detection of Staphylococcus aureus using insulated substrate impedance transducers. 2011 xxx. http://hdl.handle.net/2078.1/87123

274. Boufouss, El Hafed; Francis, Laurent; Gérard, Pierre; Assaad, Maher; Flandre, Denis. Ultra Low Power CMOS Circuits Working in Subthreshold Regime for High Temperature and Radiation Environments. 2011 xxx. http://hdl.handle.net/2078.1/87148

275. André, Nicolas; Rue, Bertrand; Scheen, Gilles; Laurent, Francis; Flandre, Denis; Raskin, Jean-Pierre. Ultra Low Power 3-D flow meter in monolithic SOI technology. In: Proceedings of the 219th Electrochemical Society Meeting – ECS 2011, 2011, paper 1459 xxx. http://hdl.handle.net/2078.1/86425

276. Flandre, Denis; Kilchytska, Valeriya; Alvarado Pulido, José Joaquin; Boufouss, El Hafed; Assaad, Maher; Rue, Bertrand; Roda Neve, Cesar; Raskin, Jean-Pierre; Francis, Laurent. Extreme-environment behaviors and performances of advanced Silicon-on-Insulator CMOS sensors, transistors and circuits. 2011 xxx. http://hdl.handle.net/2078.1/130511

277. Rudenko, C.; Kilchytska, Valeriya; Md Arshad, Mohd Khairuddin; Raskin, Jean-Pierre; Nazarov, A.; Flandre, Denis. Impact of mobility variation on threshold voltage extraction by transconductance change and gm/Id methods and its demonstration on advanced SOI MOSFETs. In: Proceedings of the Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’11, 2011, 25-26 xxx. http://hdl.handle.net/2078.1/86420

278. Gosset, Geoffroy; Bulteel, Olivier; Baijot, P.; Flandre, Denis. Ultra-High-Efficiency Co-Integrated Photovoltaic Energy Scavenger. 2011 xxx. doi:10.1109/SOI.2011.6081718. http://hdl.handle.net/2078.1/87179

279. Barenghi, Alessandro; Hocquet, Cédric; Bol, David; Standaert, François-Xavier; Regazzoni, Francesco; Koren, Israel. Exploring the feasibility of low cost fault injection attacks on sub-threshold devices through an example of a 65nm AES implementation. 2011 xxx. doi:10.1007/978-3-642-25286-0_4. http://hdl.handle.net/2078.1/87572

280. Ray Chaudhuri, Ashesh; Severi, S.; Erismis, M.A.; Francis, Laurent; Witvrouw, A.. Design of a Miniaturized Accelerometer with 200 nm Capacitive Sensing Gap. In: Proceedings of the ICT.Open Conference, 2011 xxx. http://hdl.handle.net/2078.1/114309

281. Rue, Bertrand; Olbrechts, Benoit; Raskin, Jean-Pierre; Flandre, Denis. A SOI CMOS smart strain sensor. In: Proceedings of the IEEE International SOI Conference (SOI 2011), 2011, 978-1-61284-761-0, 1-2 xxx. doi:10.1109/SOI.2011.6081791. http://hdl.handle.net/2078.1/106337

282. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. Combining sdm-based circuit switching with packet switching in a NoC for real-time applications. In: Circuits and Systems (ISCAS), 2011 IEEE International Symposium on, 2011, 978-1-4244-9473-6, p. 2505 - 2508 xxx. http://hdl.handle.net/2078.1/88701

283. Bassu, Margherita; Strambini, Lucanos Marsilio; Barillaro, Giuseppe. Advances in Electrochemical Micromachining of Silicon:Towards MEMS Fabrication. 2011 xxx. http://hdl.handle.net/2078.1/87767

284. Alvarado, Jose Joaquin; Boufouss, El Hafed; Kilchytska, Valeriya; Flandre, Denis. A Compact Model for Single Event Effects in PD SOI sub-micron MOSFETs. In: Proceedings of the Conference on Radiation Effects on Components and Systems (RADECS 2011), 2011, 7 xxx. http://hdl.handle.net/2078.1/87140

285. Gkotsis, Petros. Mechanical characterization of thin film PZT using miniature tensile and bulge testing. 2011 xxx. http://hdl.handle.net/2078.1/87311

286. Rudenko, T.; Flandre, Denis; Kilchytska, Valeriya; Burignat, S.; Raskin, Jean-Pierre; Andrieu, F.; Faynot, O.; Le Tiec, Y.; Landry, K.; Nazarov, A.; Lysenko, V. S.. Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides. In: Solid-State Electronics. Vol. 54, no. 2, p. 164-170 (2010). In: Proceedings of the 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009), Pergamon-elsevier Science Ltd; Pergamon: (United Kingdom) Kidlington; Oxford, 2010 xxx. doi:10.1016/j.sse.2009.12.014. http://hdl.handle.net/2078.1/58617

287. Ranvier, S.; Rochus, V.; Druart, Sylvain; Lamy, H.; Rochus, P.; Francis, Laurent. A MEMS-based xylophone bar magnetometer for pico satellites. 2010 xxx. http://hdl.handle.net/2078.1/176139

288. Kamel, Dina; Hocquet, Cédric; Standaert, François-Xavier; Flandre, Denis; Bol, David. Glitch-Induced Within-Die Variations of Dynamic Energy in Voltage-Scaled Nano-CMOS Circuits. In: Proceedings of ESSCIRC, European Solid-State Circuits Conference, 2010 xxx. http://hdl.handle.net/2078.1/81808

289. De Vos, Julien; Bol, David; Flandre, Denis. Génération d’horloge adaptative. 2010 xxx. http://hdl.handle.net/2078.1/109985

290. Gosset, Geoffroy; Pollissard, Guillaume; Rue, Bertrand; Bol, David; Flandre, Denis. Disruptive ultra-low-power SOI CMOS circuits towards µW medical sensor implants. In: Proceedings of the IEEE International Silicon on Insulator Conference (SOI 2010), 2010, 1-2 xxx. doi:10.1109/SOI.2010.5641370. http://hdl.handle.net/2078.1/106173

291. Al Kadi Jazairli, Mohamad; Mallat, Achraf; Vandendorpe, Luc; Flandre, Denis. An Ultra-Low-Power frequency-tunable UWB pulse generator using 65nm CMOS technology. In: Proceedings of ICUWB, IEEE International Conference on Ultra-Wideband, 2010, 1-4 xxx. http://hdl.handle.net/2078.1/106304

292. Afzalian, Aryan; Flandre, Denis. Breaching the kT/q limit with dopant segregated Schottky barrier resonant tunneling MOSFETs: A computationnal study. In: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2010), 2010, p. 376-379 xxx. doi:10.1109/ESSDERC.2010.5618206. http://hdl.handle.net/2078.1/106170

293. Burignat, S.; Flandre, Denis; Arshad, M. K.; Kilchytska, Valeriya; Andrieu, F.; Faynot, O.; Raskin, Jean-Pierre. Substrate impact on threshold voltage and subthreshold slope of sub-32 nm ultra thin SOI MOSFETs with thin buried oxide and undoped channel. In: Solid-State Electronics. Vol. 54, no. 2, p. 213-219 (2010). In: Proceedings of the 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009), Pergamon-elsevier Science Ltd: Oxford, 2010 xxx. doi:10.1016/j.sse.2009.12.021. http://hdl.handle.net/2078.1/58619

294. Mercier, Dimitri; Tang, Xiaohui; Santoro, Ronny; Sbille, Isabelle; Codina, A.; Moreno, L.; Soumillion, Patrice; Flandre, Denis; Proost, Joris. Integrated capacitive biosensors based on filamentous phages. In: Proceedings of the 20th World Congress on Biosensors, 2010, p. P2.1.093 xxx. http://hdl.handle.net/2078.1/70826

295. Kilchytska, Valeriya; Flandre, Denis; Alvarado, Joaquin; Collaert, Nadine; Rooyakers, R.; Militaru, Otilia; Berger, Guy. Effect of high-energy neutrons on MuGFETs. In: Solid-State Electronics. Vol. 54, no. 2, p. 196-204 (2010). In: Proceedings of the 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009), Pergamon-elsevier Science Ltd: Oxford, 2010 xxx. doi:10.1016/j.sse.2009.12.019. http://hdl.handle.net/2078.1/58618

296. André, Nicolas; Francis, Laurent; Druart, Sylvain; Dupuis, Pascal; Flandre, Denis; Raskin, Jean-Pierre. Portable wireless microsensing system for human breath monitoring. In: Proceedings of the 2010 CMOS Emerging Technologies Workshop, 2010, Session 2E: Wireless, paper 7 xxx. http://hdl.handle.net/2078.1/86713

297. Alvarado Pulido, José Joaquin; Kilchytska, Valeriya; Boufouss, El Hafed; Flandre, Denis. Compact Model for Single Event Transients and Total Dose Eects at High Temperatures for Partially Depleted SOI MOSFETs. In: Proceedings of the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), 2010 xxx. http://hdl.handle.net/2078.1/129902

298. Olbrechts, Benoit; Rue, Bertrand; Pardoen, Thomas; Flandre, Denis; Raskin, Jean-Pierre. Routes towards novel active pressure sensors in SOI technology. In: Proceedings of the 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics”, 2010, p. paper 36 xxx. http://hdl.handle.net/2078.1/86904

299. Moreno Hagelsieb, Luis; Tang, Xiaohui; Bulteel, Olivier; Nizzet, Y.; André, Nicolas; Gérard, Pierre; Dupuis, Pascal; Francis, Laurent; Raskin, Jean-Pierre; Flandre, Denis. Low-power/high-temperature sensors and MEMS in SOI technology. In: Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, 2010, 978-1-4398-3415-2, 165-168 xxx. http://hdl.handle.net/2078.1/91471

300. Tang, Xiaohui; Francis, Laurent; Raskin, Jean-Pierre; Flandre, Denis. Rapid and Selective Detection of Staphylococcus Aureus Using Insulated Substrate Impedance Transducers. In: Proceedings of the BIT's 3rd World Congress of Industrial Biotechnology 2010 (ibio-2010), 2010, Track 4.2, p. 292 xxx. http://hdl.handle.net/2078.1/86728

301. Bol, David; Legat, Jean-Didier; Hocquet, Cédric; Flandre, Denis. Robustness-aware sleep transistor engineering for power-gated nanometer subthreshold circuits. In: Proceedings of the IEEE International Symposium on Circuits and Systems. ISCAS 2010, IEEE, 2010, 978-1-4244-5308-5, 1484-1487 xxx. doi:10.1109/ISCAS.2010.5537352. http://hdl.handle.net/2078.1/67357

302. Moreno Hagelsieb, Luis; Nizet, Yannick; Tang, Xiaohui; Bulteel, Olivier; Van Overstaeten-Schlögel, Nancy; André, Nicolas; Dupuis, Pascal; Raskin, Jean-Pierre; Fontayne, P.A.; Gala, Jean-Luc; Francis, Laurent; Flandre, Denis. Miniaturized and low cost innovative detection systems for medical and environmental applications. In: Proceedings of the IEEE 2nd Circuits and Systems for Medical and Environmental Applications Workshop - CASME 2010, 2010, 978-142449995-3, Article n°5706682 xxx. doi:10.1109/CASME.2010.5706682; 10.1109/CASME.2010.5706682. http://hdl.handle.net/2078.1/87080

303. Rudenko, T.; Kilchytska, Valeriya; Raskin, Jean-Pierre; Andrieu, F.; Faynot, O.; Le Tiec, Y.; Landry, K.; Nazarov, A.; Flandre, Denis. Special Features of the Back-Gate Effects in UTB SOI MOSFETs. In: Proceedings of the 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics”, 2010, 18-19 xxx. http://hdl.handle.net/2078.1/87075

304. Yan, Ran; Cullen, Ailbhe; Afzalian, Aryan; Ferain, Isabelle; Lee, Chi-Woo; Dehdashti, Nima; Razavi, Pedram; Colinge, Jean-Pierre. 3D Simulation of RTS Amplitude in Accumulation-Mode and Inversion-Mode Trigate SOI MOSFETs. In: Proceedings of the 2010 EUROSOI Conference, 2010, 2 pages xxx. http://hdl.handle.net/2078.1/122578

305. Alvarado Pulido, José Joaquin; Kilchytska, Valeriya; Boufouss, El Hafed; Flandre, Denis. Modeling of Single Event Transients and Total Dose in Partially Depleted SOI CMOS Circuits. In: Proceedings of EUROSOI 2010, 2010 xxx. http://hdl.handle.net/2078.1/129899

306. Francis, Laurent; André, Nicolas; Rue, Bertrand; Dupuis, Pascal; Gérard, Pierre; Bouterfa, Mohamed; Moreno Hagelsieb, Luis; Flandre, Denis; Raskin, Jean-Pierre. Wireless humidity sensing: CMOS fabrication, interfaces, packaging and various applications from weather to re-education. In: Proceedings of the Ecole d'hiver Francophone sur les Technologies de Conception des Systèmes embarqués Hétérogènes – FETCH’10, 2010, Tutorial 1 xxx. http://hdl.handle.net/2078.1/86665

307. Mallat, Achraf; Gérard, Pierre; Drouguet, Maxime; Keshmiri, Farshad; Oestges, Claude; Craeye, Christophe; Flandre, Denis; Vandendorpe, Luc. Testbed for IR-UWB based ranging and positioning: Experimental performance and comparison to CRLBs. In: Proceedings 5th International Symposium on Wireless Pervasive Computing, 2010, 978-1-4244-6855-3, 163-168 xxx. doi:10.1109/ISWPC.2010.5483707. http://hdl.handle.net/2078.1/67404

308. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. A hybrid NoC combining SDM-based circuit switching with packet switching for real-time applications. In: NORCHIP, 2010, 2010, 978-1-4244-8972-5, p. 1-4 xxx. doi:10.1109/NORCHIP.2010.5669434. http://hdl.handle.net/2078.1/88772

309. Bol, David; Hocquet, Cédric; Flandre, Denis; Legat, Jean-Didier. The Detrimental Impact of Negative Celsius Temperature on Ultra-Low-Voltage CMOS Logic. In: Proceedings of the ESSCIRC 2010, 2010, 978-1-4244-6662-7, p. 522 - 525 xxx. http://hdl.handle.net/2078.1/88904

310. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. A hybrid router combining SDM-based circuit switching with packet switching for on-chip networks. In: Reconfigurable Computing and FPGAs (ReConFig), 2010 International Conference on, 2010, 978-1-4244-9523-8, p. 340 - 345 xxx. doi:10.1109/ReConFig.2010.22. http://hdl.handle.net/2078.1/88773

311. Garduno, I.; Cerdeira, A.; Estrada, M.; Kilchytska, Valeriya; Flandre, Denis. Modeling of main leakage currents and their contribution to channel current in Fin-FETs. In: Proceedings of the 27th International Conference on Microelectronics (MIEL 2010), IEEE, 2010, 978-1-4244-7200-0, 99-102 xxx. doi:10.1109/MIEL.2010.5490523. http://hdl.handle.net/2078.1/67396

312. Kilchytska, Valeriya; Alvarado, Jose Joaquin; Militaru, O.; Berger, G.; Flandre, Denis. Effects of high–energy neutrons on advanced SOI MOSFETs. In: Proceedings of the 6th International SemOI Workshop "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices",, 2010 xxx. http://hdl.handle.net/2078.1/106309

313. De Vos, Julien; Bol, David; Flandre, Denis. Dual-Mode Switched-Capacitor DC-DC Converter for Subthreshold Processors with Deep Sleep Mode. 2010 xxx. http://hdl.handle.net/2078.1/109987

314. Dehdashti, Nima; Afzalian, Aryan; Lee, Chi-Woo; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; Colinge, Jean-Pierre. Effect of intravalley acoustic phonon scattering on mobility in silicon nanowire transistor. In: Proceedings of the 2010 EUROSOI Conference, 2010, 2 pages xxx. http://hdl.handle.net/2078.1/122585

315. Assaad, Maher; Gérard, Pierre; Francis, Laurent; Flandre, Denis. Ultra Low Power, Harsh Environment SOI-CMOS Design of Temperature Sensor Based Threshold Detection and Wake-Up IC. In: Proceedings of the IEEE International SOI Conference 2010, 2010, 978-1-4244-9128-5 xxx. http://hdl.handle.net/2078.1/91460

316. Kilchytska, Valeriya; Alvarado Pulido, José Joaquin; Collaert, N.; Rooyakers, R.; Put, S.; Claeys, C.; Flandre, Denis. Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs. In: Proceedings of the Sixth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2010), 2010, p. 119-120 xxx. http://hdl.handle.net/2078.1/130530

317. Gosset, Geoffroy; Pollissard, Guillaume; Flandre, Denis. An Extended CAD Methodology for sizing Low-Power Low-Voltage OTA Architectures in Decanometric Technologies. In: Proceedings of the 11th International Workshop on Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD 2010), 2010, 1-4 xxx. http://hdl.handle.net/2078.1/106305

318. Pollissard-Quatremere, G.; Gosset, Geoffroy; Flandre, Denis. Analog design oriented ultra-deep-submicron CMOS technology analysis. In: Proceedings of the 6th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME 2010), IEEE, 2010, 978-1-4244-7905-4, 4 xxx. http://hdl.handle.net/2078.1/67326

319. Boufouss, El Hafed; Alvarado Pulido, José Joaquin; Flandre, Denis. Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM. In: Proceedings of the HITEC Conference, 2010, 77-82 xxx. http://hdl.handle.net/2078.1/113097

320. Kilchytska, Valeriya; Alvarado Pulido, José Joaquin; Put, S.; Collaert, N.; Simoen, E.; Claeys, C.; Militaru, Otilia; Berger, Guy; Flandre, Denis. High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. In: Proceedings of the 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), 2010, 6 xxx. http://hdl.handle.net/2078.1/130527

321. de Souza, M.; Emam, Mostafa; Vanhoenacker-Janvier, Danielle; Raskin, Jean-Pierre; Flandre, Denis; Pavanello, M.A.. Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with Fully- and Partially-Depleted operations in a wide temperature range. In: Proceedings of the 2010 IEEE International SOI Conference, 2010, 82-83 xxx. http://hdl.handle.net/2078.1/86876

322. Houri, Samer; Raskin, Jean-Pierre; Francis, Laurent. MEMS filters based on traveling flexural waves. In: proceedings of the 2010 IEEE International Frequency Control Symposium (FCS 2010), IEEE, 2010, 978-142446399-2, 151-154 xxx. doi:10.1109/FREQ.2010.5556353. http://hdl.handle.net/2078.1/67348

323. Md Arshad, Mohd Khairuddin; Raskin, Jean-Pierre; Kilchytska, Valeriya; Flandre, Denis; Faynot, O.; Scheiblin, P.; Andrieux, F.. Improved DIBL in Ultra Thin Body SOI MOSFETs with Ultra Thin Buried Oxide and inverted substrate. In: Proceedings of the ULtimate Integration on Silicon - ULIS’10, 2010, 113-116 xxx. http://hdl.handle.net/2078.1/86707

324. Bouterfa, Mohamed; Flandre, Denis. Silicon pixel detector for proton therapy dosimetry. 2010 xxx. http://hdl.handle.net/2078.1/152108

325. André, Nicolas; Raskin, Jean-Pierre; Francis, Laurent. 3-D SOI MEMS for sensing applications. In: Proceedings du 3ème Colloque du Laboratoire International Associé « Nanotechnologies & Nanosystèmes, 2010, p. 88 xxx. http://hdl.handle.net/2078.1/86798

326. Druart, Sylvain; Flandre, Denis; Francis, Laurent. A Methodology for the Simulation of MEMS Spiral Inductances used as Magnetic Sensors. In: Proceedings of the COMSOL Conference, 2010 xxx. http://hdl.handle.net/2078.1/80654

327. Kilchytska, Valeriya; Flandre, Denis; Alvarado, Joaquin; Collaert, Nadine; Rooyakers, R.; Militaru, Otilia; Berger, Guy. Total-Dose Effects Caused by High-Energy Neutrons and gamma-Rays in Multiple-Gate FETs. In: IEEE Transactions on Nuclear Science. Vol. 57, no. 4, p. 1764-1770 (2010). In: Proceedings of the 10th European Conference on Radiation and Its Effects on Components and Systems (RADECS - 09), Ieee-inst Electrical Electronics Engineers Inc: Piscataway, 2010 xxx. doi:10.1109/TNS.2009.2037419. http://hdl.handle.net/2078.1/58795

328. Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis. Variable Barrier Resonant Tunneling Transistor: Performance investigation of a Steep Slope, High On-Current device. In: Proceedings of the 2010 SemOI Conference, 2010, 2 xxx. http://hdl.handle.net/2078.1/122815

329. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. Combining Circuit and Packet switching with Bus Architecture in a NoC for Real-Time Applications. In: Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on, 2010, 978-1-4244-5308-5, p. 2880 - 2883 xxx. http://hdl.handle.net/2078.1/88903

330. Rousseau, Bertrand; Manet, Philippe; Loiselle, Igor; Legat, Jean-Didier; Vandierendonck, Hans. A methodology for precise comparisons of processor core architectures for homogeneous many-core DSP platforms. In: Conference on Design and Architectures for Signal and Image Processing (DASIP), 2010, 2010, 978-1-4244-8734-9, p. 273 - 280 xxx. doi:10.1109/DASIP.2010.5706275. http://hdl.handle.net/2078.1/88905

331. Conde, J.; Cerdeira, A.; Pavanello, M.; Kilchytska, Valeriya; Flandre, Denis. 3D Simulation of Triple-Gate MOSFETs. In: Proceedings of the 27th International Conference on Microelectronics (MIEL 2010), IEEE, 2010, 978-1-4244-7200-0, 409-411 xxx. doi:10.1109/MIEL.2010.5490454. http://hdl.handle.net/2078.1/67395

332. de Souza, Michelly; Bulteel, Olivier; Flandre, Denis; Pavanello, Marcello. Electrical Characterization of SOI Solar Cells in a Wide Temperature Range. In: Proceedings of the IEEE International Silicon on Insulator Conference (SOI 2010), 2010, 1-2 xxx. http://hdl.handle.net/2078.1/106296

333. Bouterfa, Mohamed; Gosset, Geoffroy; Gérard, Pierre; Francis, Laurent; Flandre, Denis. A wireless low power readout circuit for capacitive breathing sensor. In: Proceedings of the 9th Belgian Natioanl Day on Biomedical Engineering, 2010 xxx. http://hdl.handle.net/2078.1/106306

334. Lee, Chi-Woo; Borne, A.; Ferain, Isabelle; Afzalian, Aryan; Yan, Ran; Dehdashti-Akhavan, Nima; Razavi, P.; Colinge, Jean-Pierre. Substrate bias effects in MuGFETs. In: Proceedings of the 2010 EUROSOI Conference, 2010, 2 pages xxx. http://hdl.handle.net/2078.1/122575

335. Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis. Variable Barrier Resonant Tunneling Transistor: A New Path Towards Steep Slope and High On-Current?. In: Proceedings of the 2010 EUROSOI Conference, 2010, p. 109-110 xxx. http://hdl.handle.net/2078.1/122810

336. Kuti Lusala Tsumbu-Mbi, Vital Angelo; Legat, Jean-Didier. A Hybrid Router combining Circuit Switching and Packet Switching with Bus Architecture for On-Chip Networks. In: NEWCAS Conference (NEWCAS), 2010 8th IEEE International, 2010, 978-1-4244-6806-5 xxx. http://hdl.handle.net/2078.1/88771

Book Chapters

1. Pirson, Thibault; Le Brun, Grégoire; Ernesto Quisbert-Trujillo; Thomas Ernst; Raskin, Jean-Pierre; Bol, David. Towards Life Cycle Thinking and Judicious Ecodesign for the Internet of Things (IoT) Current Practices and Perspectives. In: Outlooking beyond Nanoelectronics and Nanosystems , Simon Deleonibus: New York, 2024, p. 75-136. 9781003509905. xxx xxx. doi:10.1201/9781003509905. http://hdl.handle.net/2078.1/292137

2. Bol, David; de Streel, Guerric. An 802.15.4 IR-UWB Transmitter SoC with Adaptive-FBB-Based Channel Selection and Programmable Pulse Shape. In: The Fourth Terminal, Integrated Circuits and Systems (Integrated Circuits and Systems book series (ICIR); xxx), Springer Nature Switzerland AG 2020: Switzerland, 2020, p. 223-241. 978-3-030-39495-0. xxx xxx. doi:10.1007/978-3-030-39496-7_9. http://hdl.handle.net/2078.1/236413

3. Hadj Said, Mohamed; Tounsi, Farès; Gkotsis, Petros; Mezghani, Brahim; Francis, Laurent. A resonant microstructure tunability analysis for an out-of-plane capacitive detection MEMS magnetometer. In: Micro- and Nanosystems Information Storage and processing Systems (Microsystem Technologies; xxx), Springer-Verlag: Berlin Heidelberg, 2016, p. 19. xxx xxx. doi:10.1007/s00542-016-3093-y. http://hdl.handle.net/2078.1/176020

4. Wang, Wensi; Rohan, James F.; Wang, NingNing; Hayes, Mike; Romani, Aldo; Macrelli, Enrico; Dini, Michele; Filippi, Matteo; Tartagni, Marco; Flandre, Denis. Smart Energy Management and Conversion. In: Beyond-CMOS Nanodevices 1 , John Wiley & Sons, Inc., 2014, p. 249-271. 978-1-84821-654-9. xxx xxx. doi:10.1002/9781118984772.ch9. http://hdl.handle.net/2078.1/152104

5. Palestri, Pierpaolo; Mouis, Mireille; Afzalian, Aryan; Selmi, Luca; Pittino, Federico; Flandre, Denis; Ghibaudo, Gérard. Sensitivity of Silicon Nanowire Biochemical Sensors. In: Beyond-CMOS Nanodevices 1 , John Wiley & Sons, Inc.: Hoboken, NJ, USA, 2014, p. 43-63. 978-1-84821-654-9. xxx xxx. doi:10.1002/9781118984772.ch3. http://hdl.handle.net/2078.1/152045

6. Kilchytska, Valeriya; Makovejev, Sergej; Md Arshad, Mohd Khairuddin; Raskin, Jean-Pierre; Flandre, Denis. Perspectives of UTBB FD SOI MOSFETs for Analog and RF Applications. In: Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (Engineering materials; xxx), Springer International Publishing: Switzerland, 2014, p. 27-46. 978-3-319-08803-7. xxx xxx. doi:10.1007/978-3-319-08804-4_2. http://hdl.handle.net/2078.1/150999

7. Kilchytska, Valeriya; Raskin, Jean-Pierre; Flandre, Denis. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range. In: CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications , Pan Stanford Publishing Pte Ltd, 2013, 233-259. 978-981-4364-02-7. xxx xxx. doi:10.1201/b13063-9. http://hdl.handle.net/2078.1/118818

8. Balestra, Francis; Flandre, Denis. Introduction to part 3, in Nanoscale CMOS. In: Nanoscale CMOS. Innovative Materials, Modeling and Characterization , John Wiley & Sons, Inc.: Hoboken, NJ, USA, 2013, p. 471-474. 978-1-8482-1180-3. xxx xxx. doi:10.1002/9781118621523.ch13. http://hdl.handle.net/2078.1/129195

9. Bol, David. Ultra-low-voltage design of nanometer CMOS circuits for smart energy-autonomous systems. In: Advanced Circuits for Emerging Technologies , John Wiley & Sons, Inc.: United States of America, 2012, p. 57-83. 978-0-470-90005-5. xxx xxx. http://hdl.handle.net/2078.1/129561

10. Dupuis, Pascal; Van Overstraeten, Nancy; Raskin, Jean-Pierre; Francis, Laurent; Flandre, Denis. Some mitigations for unequal data variance in linear regression. In: Advanced Mathematical and Computational Tools in Metrology and Testing IX (Advances in Mathematics for Applied Sciences; xxx), World Scientific Publishing Vompany, 2012, pp. 118-125. 978-981-4397-94-0. xxx xxx. doi:10.1142/9789814397957_0015. http://hdl.handle.net/2078.1/129336

11. Afzalian, Aryan; Flandre, Denis. Design of Multi Gb/s Monolithically Integrated Photodiodes and Multi-stage Transimpedance Amflifiers in Thin-Film SOI CMOS Technology. In: Photodiodes - From Fundamentals to Applications , InTech, 2012, p. 331-368. 978-953-51-0895-5. xxx xxx. doi:10.5772/50531. http://hdl.handle.net/2078.1/122831

12. Rudenko, Tamara; Kilchytska, Valeriya; Raskin, Jean-Pierre; Nazarov, Alexei; Flandre, Denis. Special features of the back-gate effects in ultra-thin body SOI MOSFETs. In: Semiconductor-On-Insulator Materials for NanoElectronics Applications , Springer-Verlag: Berlin Heidelberg, 2011, p. 323-343. xxx xxx. http://hdl.handle.net/2078.1/87428

13. Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis. Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current device through 3D Non-Equilibrium Green Function simulations. In: Semiconductor-On-Insulator Materials for Nano-Electronics Applications (Engineering Materials; xxx), Springer, 2011, p. 201-214. 978-3-642-15867-4. xxx xxx. http://hdl.handle.net/2078.1/86841

14. Afzalian, Aryan; Flandre, Denis. Design of Thin-Film Lateral SOI PIN Photodiodes with up to Tens of GHz Bandwidth. In: Advances in Photodiodes , InTech, 2011. 978-953-307-163-3. xxx xxx. http://hdl.handle.net/2078.1/106454

15. Bulteel, Olivier; Van Overstraeten, Nancy; Afzalian, Aryan; Dupuis, Pascal; Jeumont, Sabine; Irenge Mwana Wa Bene, Léonid; Ambroise, Jérôme; Macq, Benoît; Gala, Jean-Luc; Flandre, Denis. Low-Wavelengths SOI CMOS Photosensors for Biomedial Applications. In: Biomedical Engineering, Trends in Electronics, Communications and Software , InTech Europe: (Croatia) Rijeka, 2011, 257-276. 978-953-307-475-7. xxx xxx. http://hdl.handle.net/2078.1/106444

16. Raskin, Jean-Pierre; Francis, Laurent; Flandre, Denis. Sensing and MEMS Devices in Thin-Film SOI MOS Technology. In: Semiconductor-On-Insulator Materials for Nanoelectronics Applications, Engineering Materials , Springer-Verlag: Berlin-Heidelberg, 2011, p. 355-392. 978-3-642-15867-4. xxx xxx. doi:10.1007/978-3-642-15868-1_20. http://hdl.handle.net/2078.1/106451

17. Kilchytska, Valeriya; Raskin, Jean-Pierre; Flandre, Denis. Specific features of MuGFETs behavior at high temperatures in a wide frequency range. In: CMOS Nanoelectronics: Innovative Devices, Architectures and Applications , Pan Stanford Publishers, 2011. xxx xxx. http://hdl.handle.net/2078.1/106457

18. André, Nicolas; Francis, Laurent; Rue, Bertrand; Renaux, Christian; Flandre, Denis; Raskin, Jean-Pierre. Artificial microbeams for sensing air flow, temperature and humidity by combining MEMS and CMOS technologies. In: Optical, Acoustic, Magnetic, and Mechanical Sensor Technologies , CRC Press, 2011. 9781439869758. xxx xxx. http://hdl.handle.net/2078.1/106455

19. Kilchytska, Valeriya; Flandre, Denis; Raskin, Jean-Pierre. Wide Frequency Band Characterization. In: Nanoscale CMOS: Innovative Materials, Modeling and Characterization , Wiley-ISTE, 2010, 672 pages. xxx xxx. doi:10.1002/9781118621523.ch17. http://hdl.handle.net/2078.1/106448

Working Papers

1. Charlotte Frenkel; Bol, David; Giacomo Indiveri. Bottom-Up and Top-Down Neural Processing Systems Design: Neuromorphic Intelligence as the Convergence of Natural and Artificial Intelligence. 2021. 25 p. xxx xxx. http://hdl.handle.net/2078.1/247971

2. Frenkel, Charlotte; Lefebvre, Martin; Bol, David. Learning without feedback: Direct random target projection as a feedback-alignment algorithm with layerwise feedforward training. 2019. xxx xxx. http://hdl.handle.net/2078.1/241303

Books

1. Poletkin, Kirill; Francis, Laurent. Magnetic Sensors and Devices: Technologies and Applications. CRC Press: USA, 2017. 978-1-4987-1097-8. 257 pages. http://hdl.handle.net/2078.1/197221

2. Nazarov, Alexei N.; Lysenko, Volodymyr S.; Flandre, Denis. Functional Nanomaterials and Devices VII. Trans Tech Publications Ltd: Zurich-Switzerland, 2014. 978-3-03785-942-1. 168 pages. http://hdl.handle.net/2078.1/142105

3. Nazarov, Alexei; Balestra, Francis; Kilchytska, Valeriya; Flandre, Denis. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting. Springer International Publishing: Switzerland, 2014. 978-3-319-08803-7. 467 pages. http://hdl.handle.net/2078.1/150987

4. Francis, Laurent; Iniewski, Krzysztof. Novel Advances in Microsystems Technologies and Their Applications. CRC Press, 2013. 9781466560666. 621 pages. http://hdl.handle.net/2078.1/133436

Reports

1. Faugère, Jean-Charles; Perret, Ludovic; Petit, Christophe; Renault, Guénaël. New Subexponential Algorithms for Factoring in SL(2;F2n), xxx xxx. 2011. 21 p. http://hdl.handle.net/2078.1/119953