Micro and Nano Technologies and Systems

Figure : Concentration of bacterial cells on the capacitive sensor thanks to AC-electrosmosis

The group forms with the CeRMiN, the UCL Research center for micro- and nano-scopic materials and electronics devices a multidisciplinary team, involving both silicon device physicists, technologists and experimentalists, as well as circuit designers. It gathers about 50 members, out of which 5 professors and more than 36 PhD students and researchers.

Principal Investigators :

Denis Flandre, Laurent Francis, Isabelle Huynen, Dimitri Lederer, Sorin Melinte, Jean-Pierre Raskin

Research Labs : 

SOI Group, Sensors, Microsystems and Actuators Laboratory of Louvain (SMALL)

Research Areas :     

This activity covers the characterization up to 110 GHz, of bulk and nanocomposite materials in various states: solids, foams, liquids, powders, gels, films, … The models created using these measurements allow to extend the range of application of nanostructures, and to develop new sensors and signal processing devices. Of current interest are ferromagnetic nanowires for tunable electronics, carbonated nanoparticles (carbon nanotubes, graphene) for intelligent packaging (EMI shielding, ESD protection, photovoltaic), and nanoporous thin film membranes for fuel cell applications.

Our current projects aim at understanding the fundamental nanoscience of man-made quantum structures, namely semiconductor nanodevices and hybrid inorganic-organic platforms for molecular opto-electronics and plasmonics. In particular, we use high-resolution nanolithography as well as soft-lithography and bottom-up fabrication techniques to engineer smart nano- and microsystems. Recently, our group started the development of cutting-edge instrumentation in the area of scanning tunneling spectroscopy and near-field experimental setups based on photon detection.

ICTEAM has been active in Silicon-on-Insulator (SOI) technology since 1986. Silicon-on-Insulator (SOI) has been a major theme of R&D for more than 20 years, leading to significant contributions with regards to e.g. double-gate MOSFETs, nanowires, high-temperature SOI CMOS, microwaves and millimeter-waves SOI MOSFETs and substrate, Ultra-Low-Power smart sensors (including biosensors) in terms of processing, characterization, simulation, modeling and design.

Bulk and surface micromachining sensors for chemical, medical and harsh environments applications. The group members are focused on varied devices design and fabrication of MEMS and NEMS structures co-integrated with SOI CMOS circuits: design and fabrication of NEMS-based lab-on-chip to characterize the electromechanical properties of materials at nanometer scale, nanowires gas sensors, nanoporous silicon membranes, magnetometers, flow, humidity, pressure and inertial sensors, surface acoustic wave device, etc.

Research infrastructure :

Winfab is equipped with a complete pilot fabrication line on silicon/SOI substrates of about 1,000 m² for the rapid prototyping and validation of new fabrication steps and of new integrated devices or microsystems.

Electrical measurement set-ups available in WELCOME cover a large range of frequencies (from DC up to 110 GHz) and temperatures (from few mK up to 400°C) on wafer-scale as well as packaged circuits levels. Physical (e.g. interface or thin layer properties) and mechanical (adhesion, stress...) characterization are widely available in the CeRMiN environment.

Simulation tools include industry-standard softwares for integrated processes and devices. Device irradiation is available at the nearby cyclotron research centre on a bench qualified by ESA. The wide research results have been honoured by more than 50 invited presentations in international and national conferences, as well as by several awards.

Most recent publications

Below are listed the 10 most recent journal articles and conference papers produced in this research area. You also can access all publications by following this link : see all publications.

Journal Articles

1. Le Brun, Grégoire; Raskin, Jean-Pierre. Life cycle approach for electronics eco - design: case study on paper - based water quality sensors. In: Procedia CIRP, Vol. 90, p. 344-349 (2020). doi:10.1016/j.procir.2020.02.041. http://hdl.handle.net/2078.1/237963

2. Nabet, Massinissa; Rack, Martin; Hashim, Nur Zatil; de Groot, C.H.K.; Raskin, Jean-Pierre. Behavior of gold-doped silicon substrate under small- and large-RF signal. In: Solid-State Electronics, Vol. 168, p. 107718 (2020). doi:10.1016/j.sse.2019.107718. http://hdl.handle.net/2078.1/237961

3. Scheen, Gilles; Tuyaerts, Romain; Rack, Martin; Nyssens, Lucas; Rasson, J.; Nabet, Massinissa; Raskin, Jean-Pierre. Post-process porous silicon for 5G applications. In: Solid-State Electronics, Vol. 168, p. 107719 (2020). doi:10.1016/j.sse.2019.107719. http://hdl.handle.net/2078.1/237959

4. HUET, Benjamin; Raskin, Jean-Pierre; Redwing, J. M.; Snyder, D. W. Fundamental limitations for the transfer of graphene grown on Cu substrates. In: Carbon, Vol. 163, p. 95-104 (2020). doi:10.1016/j.carbon.2020.02.074. http://hdl.handle.net/2078.1/237909

5. Han, Qinghua; Liu, Mingshan; Kazemi Esfeh, Babak; Raskin, Jean-Pierre; Zhao, Qing-Tai. Impact of gate to source/drain alignment on the static and RF performance of junctionless Si nanowire n-MOSFETs. In: Solid-State Electronics, Vol. 169, p. 107817 (2020). doi:10.1016/j.sse.2020.107817. http://hdl.handle.net/2078.1/237900

6. Shan, Zengyu; Zhang, Xi; Dang, Jiaojiao; Chen, Yanping; Lu, Bo; Zhang, Meiyu; Song, Jun; Raskin, Jean-Pierre; Tang, Xiaohui. Research of correspondence between human beings and universe based on intelligent pulse diagnosis instrument. In: Journal of Traditional Chinese Medicine, Vol. 60, no.24 (2019). doi:10.13288/j.11-2166/r.2019.24.013. http://hdl.handle.net/2078.1/237892

7. Nyssens, Lucas; Rack, Martin; Raskin, Jean-Pierre. Effective resistivity extraction of low-loss silicon substrate at millimeter-wave frequencies. In: International Journal of Microwave and Wireless Technologies, Vol. 12, no.7, p. 615-628 (2020). doi:10.1017/S175907872000077X (Soumis). http://hdl.handle.net/2078.1/237891

8. Pang, Liuqing; Barras, Alexandre; Mishyn, Vladyslav; Heyte, Svetlana; Heuson, Egon; Oubaha, Hamid; Sandu, Georgiana; Melinte, Sorin; Boukherroub, Rabah; Szunerits, Sabine. Plasmon-Driven Electrochemical Methanol Oxidation on Gold Nanohole Electrodes. In: ACS Applied Materials and Interfaces, Vol. 2020, no.12, p. 50426−50432 (2020). doi:10.1021/acsami.0c14436. http://hdl.handle.net/2078.1/237651

9. Nyssens, Lucas; Halder, Arka; Esfeh, Babak Kazemi; Planes, Nicolas; Haond, Michel; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and Its Effect on Analog Figures of Merit. In: I E E E Journal of the Electron Devices Society, Vol. 8, p. 789-796 (2020). doi:10.1109/JEDS.2020.2999632. http://hdl.handle.net/2078.1/235665

10. Lontchi Jioleo, Jackson; Zhukova, Maria; Kovacic, Milan; Krc, Janez; Chen, Wei-Chao; Edoff, Marika; Bose, Sourav; Salomé, Pedro M.P.; Goffard, julie; Cattoni, Andrea; Gouillart, L.; Collin, Stéphane; Gusak, Victoria; Flandre, Denis. Optimization of Back Contact Grid Size in Al2O3-Rear-Passivated Ultrathin CIGS PV Cells by 2-D Simulations. In: I E E E Journal of Photovoltaics, Vol. 10, no. 6, p. 1908-1917 (2020). doi:10.1109/JPHOTOV.2020.3012631. http://hdl.handle.net/2078.1/235642

Conference Papers

1. Vercauteren, Roselien; Leprince, Audrey; Mahillon, Jacques; Francis, Laurent. Porous Silicon Biosensor for the Detection of Bacteria through Their Lysate. http://hdl.handle.net/2078.1/238072

2. Vandermolen, E.; Ferrandis, P.; Allibert, F.; Nabet, Massinissa; (Kees) de Groot, CH.; Raskin, Jean-Pierre; Cassé, M.. Characterization of deep levels in high resistivity substrates by Photo-Induced Current Transient Spectroscopy. http://hdl.handle.net/2078.1/237802

3. Le Brun, Grégoire; Raskin, Jean-Pierre. Life cycle approach for electronics eco-design: case study on paper-based water quality sensors. http://hdl.handle.net/2078.1/237801

4. Pardoen, Thomas; Dépinoy, S.; Strepenne, F.; Bertholet, Y.; Raskin, Jean-Pierre; Massart, T. J.; Godet, S.. Interface toughening in multilayered systems through extrinsic plastically deforming or compliant dissipative interlayers. http://hdl.handle.net/2078.1/237799

5. Wane, S.; Huard, V.; Rack, Martin; Nyssens, Lucas; Kieniewicz, B.; Bajon, D.; Raskin, Jean-Pierre. Broadband smart mm-wave Front-End-Modules in advanced FD-SOI with adaptive-biasing and tuning of distributed antenna-arrays. http://hdl.handle.net/2078.1/237796

6. Jaddi, Sahar; Coulombier, Michaël; Idrissi, Hosni; Raskin, Jean-Pierre; Pardoen, Thomas. Fracture toughness and environmentally assisted subcritical cracking of thin freestanding Al2O3 and SiO2 films. http://hdl.handle.net/2078.1/237795

7. Rack, Martin; Nyssens, Lucas; Wane, S.; Bajon, D.; Raskin, Jean-Pierre. DC-40 GHz SPDTs in 22 nm FD-SOI and back-gate impact study. http://hdl.handle.net/2078.1/237794

8. Raskin, Jean-Pierre. No Digital Society without Sustainable Communication Technologies. http://hdl.handle.net/2078.1/237786

9. Halder, Arka; Nyssens, Lucas; Rack, Martin; Raskin, Jean-Pierre; Kilchytska, Valeriya. Effect of heat sink Back-End of Line on self-heating in 22 nm FD SOI MOSFETs. http://hdl.handle.net/2078.1/237784

10. Rack, Martin; Raskin, Jean-Pierre. SOI devices and substrates towards RF and millimeter-wave ICs. In: IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020, 978-1-7281-2539-8. doi:10.1109/EDTM47692.2020.9117977. http://hdl.handle.net/2078.1/236520