Micro and Nano Technologies and Systems

Figure : Concentration of bacterial cells on the capacitive sensor thanks to AC-electrosmosis

The group forms with the CeRMiN, the UCL Research center for micro- and nano-scopic materials and electronics devices a multidisciplinary team, involving both silicon device physicists, technologists and experimentalists, as well as circuit designers. It gathers about 50 members, out of which 5 professors and more than 36 PhD students and researchers.

Principal Investigators :

Denis Flandre, Laurent Francis, Isabelle Huynen, Dimitri Lederer, Sorin Melinte, Jean-Pierre Raskin

Research Labs : 

RF SOI Group, Sensors, Microsystems and Actuators Laboratory of Louvain (SMALL)

Research Areas :     

This activity covers the characterization up to 110 GHz, of bulk and nanocomposite materials in various states: solids, foams, liquids, powders, gels, films, … The models created using these measurements allow to extend the range of application of nanostructures, and to develop new sensors and signal processing devices. Of current interest are ferromagnetic nanowires for tunable electronics, carbonated nanoparticles (carbon nanotubes, graphene) for intelligent packaging (EMI shielding, ESD protection, photovoltaic), and nanoporous thin film membranes for fuel cell applications.

Our current projects aim at understanding the fundamental nanoscience of man-made quantum structures, namely semiconductor nanodevices and hybrid inorganic-organic platforms for molecular opto-electronics and plasmonics. In particular, we use high-resolution nanolithography as well as soft-lithography and bottom-up fabrication techniques to engineer smart nano- and microsystems. Recently, our group started the development of cutting-edge instrumentation in the area of scanning tunneling spectroscopy and near-field experimental setups based on photon detection.

ICTEAM has been active in Silicon-on-Insulator (SOI) technology since 1986. Silicon-on-Insulator (SOI) has been a major theme of R&D for more than 20 years, leading to significant contributions with regards to e.g. double-gate MOSFETs, nanowires, high-temperature SOI CMOS, microwaves and millimeter-waves SOI MOSFETs and substrate, Ultra-Low-Power smart sensors (including biosensors) in terms of processing, characterization, simulation, modeling and design.

Bulk and surface micromachining sensors for chemical, medical and harsh environments applications. The group members are focused on varied devices design and fabrication of MEMS and NEMS structures co-integrated with SOI CMOS circuits: design and fabrication of NEMS-based lab-on-chip to characterize the electromechanical properties of materials at nanometer scale, nanowires gas sensors, nanoporous silicon membranes, magnetometers, flow, humidity, pressure and inertial sensors, surface acoustic wave device, etc.

Research infrastructure :

Winfab is equipped with a complete pilot fabrication line on silicon/SOI substrates of about 1,000 m² for the rapid prototyping and validation of new fabrication steps and of new integrated devices or microsystems.

Electrical measurement set-ups available in WELCOME cover a large range of frequencies (from DC up to 110 GHz) and temperatures (from few mK up to 400°C) on wafer-scale as well as packaged circuits levels. Physical (e.g. interface or thin layer properties) and mechanical (adhesion, stress...) characterization are widely available in the CeRMiN environment.

Simulation tools include industry-standard softwares for integrated processes and devices. Device irradiation is available at the nearby cyclotron research centre on a bench qualified by ESA. The wide research results have been honoured by more than 50 invited presentations in international and national conferences, as well as by several awards.

Most recent publications

Below are listed the 10 most recent journal articles and conference papers produced in this research area. You also can access all publications by following this link : see all publications.

Journal Articles

1. Nyssens, Lucas; Rack, Martin; Schwan, Christophe; Zhao, Zhixing; Lehmann, Steffen; Hermann, Tom; Allibert, Frederic; Aulnette, Cécile; Lederer, Dimitri; Raskin, Jean-Pierre. Impact of substrate resistivity on spiral inductors at mm-wave frequencies. In: Solid-State Electronics, Vol. 194 (2022). doi:10.1016/j.sse.2022.108377. http://hdl.handle.net/2078.1/267832

2. Saada, Hiba; Pagneux, Quentin; Wei, James; Live, Ludovic; Roussel, Alain; Dogliani, Alexis; Die Morini, Lycia; Engelmann, Ilka; Kazali Alidjinou, Enagnon; Rolland, Anne Sophie; Faure, Emmanuel; Poissy, Julien; Labreuche, Julien; Lee, Gil; Li, Peng; Curran, Gerard; Jawhari, Anass; Yunda Sangoluisa, Jhonny Alexander; Melinte, Sorin; Legay, Axel; Gala, Jean-Luc; Devos, David; Boukherroub, Rabah; Szunerits, Sabine. Sensing of COVID-19 spike protein in nasopharyngeal samples using a portable surface plasmon resonance diagnostic system. In: Sensors & Diagnostics, Vol. 1, p. 1021-1031 (2022). doi:10.1039/d2sd00087c. http://hdl.handle.net/2078.1/265216

3. Voronova, Anna; Pagneux, Quentin; Decoin, Raphael; Woitrain, Eloise; Butruille, Laura; Barras, Alexandre; Foulon, Catherine; Lecoeur, Marie; Jaramillo Calderón, Diego Fernando; Rumipamba Lopez, Jose Alcides; Melinte, Sorin; Abderrahmani, Amar; Montaigne, David; Boukherroub, Rabah; Szunerits, Sabine. Heat-based transdermal delivery of a ramipril loaded cream for treating hypertension. In: Nanoscale, Vol. 14, no. 34, p. 12185-12256 (2022). doi:10.1039/d2nr02295h. http://hdl.handle.net/2078.1/264852

4. Oliveira, Kevin; P. Teixeira, Jennifer; Chen, Wei-Chao; Lontchi Jioleo, Jackson; J. N. Oliveira, António; Çaha, Ihsan; Deepak Francis, Leonard; Flandre, Denis; Edoff, Marika; A. Fernandes, Paulo; M. P. Salomé, Pedro. SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness. In: IEEE JOURNAL OF PHOTOVOLTAICS, , p. 8 (2022). (Accepté/Sous presse). http://hdl.handle.net/2078.1/260533

5. Amor, Sedki; Kilchytska, Valeriya; Tounsi, Fares; André, Nicolas; Machhout, M.; Francis, Laurent; Flandre, Denis. Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing. In: Solid-State Electronics, Vol. Journal pre proof, p. 20 (2022). doi:10.1016/j.sse.2022.108300 (Accepté/Sous presse). http://hdl.handle.net/2078.1/260042

6. Yan, Yiyi; Kilchytska, Valeriya; Bin, Wang; Faniel, Sébastien; Zeng, Yun; Raskin, Jean-Pierre; Flandre, Denis. Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors. In: Microelectronic Engineering, Vol. 254, no.111708, p. 7 (2022). doi:10.1016/j.mee.2022.111708. http://hdl.handle.net/2078.1/259850

7. Li Feng; Jiajun Liu; Huynen, Isabelle; Mustafa Z. Mahmoud; Majid Niaz Akhtar. Electromagnetic performance, Optical and Physiochemical Features of CaTiO3/ NiO and SrFe12O19/NiO Nanocomposites Based Bilayer Absorber. In: Journal of Colloid and Interface Science, p. 879-892 (2021). doi:10.1016/j.jcis.2021.11.127. http://hdl.handle.net/2078.1/254230

8. Vercauteren, Roselien; Scheen, Gilles; Raskin, Jean-Pierre; Francis, Laurent. Porous silicon membranes and their applications: Recent advances. In: Sensors and Actuators A: Physical, Vol. 318, no. 112486, p. 20 (2021). doi:10.1016/j.sna.2020.112486. http://hdl.handle.net/2078.1/256987

9. Tang, Fen; Shang, Qingqing; Yang, Songlin; Wang, Ting; Melinte, Sorin; Zuo, Chao; Ye, Ran. Generation of Photonic Hooks from Patchy Microcylinders. In: Photonics, Vol. 8, p. 466 (2021). doi:10.3390/photonics8110466. http://hdl.handle.net/2078.1/254102

10. Shang, Qingqing; Tang, Fen; Yu, Lingya; Oubaha, Hamid; Caina Aysabucha, Darwin Rodolfo; Yang, Songlin; Melinte, Sorin; Zuo, Chao; Wang, Zengbo; Ye, Ran. Super-Resolution Imaging with Patchy Microspheres. In: Photonics, Vol. 8, p. 513 (2021). doi:10.3390/photonics8110513. http://hdl.handle.net/2078.1/254099

Conference Papers

1. Rack, Martin. A DC-120 GHz SPDT Switch Based on 22 nm FD-SOI SLVT NFETs with Substrate Isolation Rings Towards Increased Shunt Impedance. In: 2022 IEEE RFIC Symposium, 2022, 978-1-6654-9611-7/22 xxx. doi:10.1109/RFIC54546.2022.9863217. http://hdl.handle.net/2078.1/267841

2. Wane, S.; Tran, Q. H.; Dinh, T. V.; Eddine, J. A.; Duffourg, F.; Ndagijimana, F.; Bajon, D.; Terki, F.; Rioult, J.; Darroman, J.-L.; Bonnaire, L.; Montfort, O.; Huard, V.; Raskin, Jean-Pierre; Lederer, Dimitri; Bousseksou, A.. Spintronics Technology Solutions for Interferometric Thermal-Electromagnetic Sensing. In: Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, 2022, 978-1-6654-8609-5/22 xxx. http://hdl.handle.net/2078.1/267837

3. Wane, S.; Ferrero, F.; Sombrin, J.; Tombakdjian, L.; Bajon, D.; Ratajczak, P.; Molina, F.; Rack, Martin; Nyssens, Lucas; Raskin, Jean-Pierre; Lederer, Dimitri; Craeye, Christophe. Energy-Efficient RF-Optics Multi-Beam Systems Using Correlation Technologies: Toward Hybrid GaN-FDSOI Front-End-Modules. In: Proceedings of the 2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems, 2022, 978-1-6654-8609-5 xxx. http://hdl.handle.net/2078.1/267836

4. Nyssens, Lucas; Rack, Martin; Lederer, Dimitri; Raskin, Jean-Pierre. Effect of probe coupling on MOSFET series resistance extraction up to 110 GHz. In: 2022 IEEE Latin America Electron Devices Conference (LAEDC), 2022, 978-1-6654-9767-1/22 xxx. http://hdl.handle.net/2078.1/267835

5. Nyssens, Lucas; Rack, Martin; Wane, S.; Schwan, C.; Lehmann, S.; Zhao, Z.; Lucci, L.; Lugo-Alvarez, J.; Gaillard, F.; Raskin, Jean-Pierre; Lederer, Dimitri. A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-SOI with Back-Gate Bias Tunability. In: Proceedings of the 17th European Microwave Integrated Circuits Conference, 2022, 978-2-87487-070-5 xxx. http://hdl.handle.net/2078.1/267834

6. Nabet, Massinissa; Rack, Martin; Nyssens, Lucas; Raskin, Jean-Pierre; Lederer, Dimitri. 28 GHz Down-Conversion Mixer with RF Back-Gate Excitation Topology in 22-nm FD-SOI. In: Proceedings of the 17th European Microwave Integrated Circuits Conference, 2022, 978-2-87487-070-5 xxx. http://hdl.handle.net/2078.1/267831

7. Nyssens, Lucas; Rack, Martin; Nabet, Massinissa; Schwan, C.; Zhao, Z.; Lehmann, S.. PN Junctions Interface Passivation in 22 nm FD- SOI for Low-Loss Passives. In: 24th International Microwave and Radar Conference (MIKON), 2022, 978-83-956020-3-0 xxx. http://hdl.handle.net/2078.1/267830

8. Halder, Arka; Nyssens, Lucas; Rack, Martin; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. 22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C. In: SiRF 2022 Proceedings, IEEE, 2022, 978-1-6654-3469-0, p. 27-30 xxx. doi:10.1109/sirf53094.2022.9720052. http://hdl.handle.net/2078.1/262713

9. de Leuze, Oriane; Danlée, Yann; Tang, Xiaohui; Mahy, J.; Walewyns, Thomas; Raskin, Jean-Pierre; Hermans, Sophie; Francis, Laurent. Sub-ppm detection of H2S with CuO-loaded SnO2 hollow nanospheres deposited on interdigitated electrodes. 2022 xxx. http://hdl.handle.net/2078.1/260251

10. Wane, S.; Tran, Q. H.; Dinh, T. V.; Terki, F.; Bajon, D.; Huard, V.; Nyssens, Lucas; Lederer, Dimitri; Eudeline, P.; Bousseksou, A.. High Resolution Spintronics Probe-Array Technology Solutions for Very Near-Field Scanning. In: 2021 IEEE Conference on Antenna Measurements & Applications (CAMA), 2021, 978-1-7281-9697-8/21 xxx. doi:10.1109/CAMA49227.2021. http://hdl.handle.net/2078.1/267843