Micro and Nano Technologies and Systems

Figure : Concentration of bacterial cells on the capacitive sensor thanks to AC-electrosmosis

The group forms with the CeRMiN, the UCL Research center for micro- and nano-scopic materials and electronics devices a multidisciplinary team, involving both silicon device physicists, technologists and experimentalists, as well as circuit designers. It gathers about 50 members, out of which 5 professors and more than 36 PhD students and researchers.

Principal Investigators :

Denis Flandre, Laurent Francis, Isabelle Huynen, Sorin Melinte, Jean-Pierre Raskin

Research Labs : 

SOI Group, Sensors, Microsystems and Actuators Laboratory of Louvain (SMALL)

Research Areas :     

This activity covers the characterization up to 110 GHz, of bulk and nanocomposite materials in various states: solids, foams, liquids, powders, gels, films, … The models created using these measurements allow to extend the range of application of nanostructures, and to develop new sensors and signal processing devices. Of current interest are ferromagnetic nanowires for tunable electronics, carbonated nanoparticles (carbon nanotubes, graphene) for intelligent packaging (EMI shielding, ESD protection, photovoltaic), and nanoporous thin film membranes for fuel cell applications.

Our current projects aim at understanding the fundamental nanoscience of man-made quantum structures, namely semiconductor nanodevices and hybrid inorganic-organic platforms for molecular opto-electronics and plasmonics. In particular, we use high-resolution nanolithography as well as soft-lithography and bottom-up fabrication techniques to engineer smart nano- and microsystems. Recently, our group started the development of cutting-edge instrumentation in the area of scanning tunneling spectroscopy and near-field experimental setups based on photon detection.

ICTEAM has been active in Silicon-on-Insulator (SOI) technology since 1986. Silicon-on-Insulator (SOI) has been a major theme of R&D for more than 20 years, leading to significant contributions with regards to e.g. double-gate MOSFETs, nanowires, high-temperature SOI CMOS, microwaves and millimeter-waves SOI MOSFETs and substrate, Ultra-Low-Power smart sensors (including biosensors) in terms of processing, characterization, simulation, modeling and design.

Bulk and surface micromachining sensors for chemical, medical and harsh environments applications. The group members are focused on varied devices design and fabrication of MEMS and NEMS structures co-integrated with SOI CMOS circuits: design and fabrication of NEMS-based lab-on-chip to characterize the electromechanical properties of materials at nanometer scale, nanowires gas sensors, nanoporous silicon membranes, magnetometers, flow, humidity, pressure and inertial sensors, surface acoustic wave device, etc.

Research infrastructure :

Winfab is equipped with a complete pilot fabrication line on silicon/SOI substrates of about 1,000 m² for the rapid prototyping and validation of new fabrication steps and of new integrated devices or microsystems.

Electrical measurement set-ups available in WELCOME cover a large range of frequencies (from DC up to 110 GHz) and temperatures (from few mK up to 400°C) on wafer-scale as well as packaged circuits levels. Physical (e.g. interface or thin layer properties) and mechanical (adhesion, stress...) characterization are widely available in the CeRMiN environment.

Simulation tools include industry-standard softwares for integrated processes and devices. Device irradiation is available at the nearby cyclotron research centre on a bench qualified by ESA. The wide research results have been honoured by more than 50 invited presentations in international and national conferences, as well as by several awards.

Most recent publications

Below are listed the 10 most recent journal articles and conference papers produced in this research area. You also can access all publications by following this link : see all publications.

Journal Articles

1. Chekin, Fereshteh; Mishyn, Vladyslav; Barras, Alexandre; Lyskawa, Joel; Ye, Ran; Melinte, Sorin; Woisel, Patrice; Boukherroub, Rabah; Szunerits, Sabine. Dopamine-functionalized cyclodextrins: modification of reduced graphene oxide based electrodes and sensing of folic acid in human serum. In: International Journal of Analytical and Bioanalytical Chemistry, Vol. 411, p. 5149-5157 (2019). doi:10.1007/s00216-019-01892-1. http://hdl.handle.net/2078.1/225372

2. Salerno Galembeck, Egon Henrique; Flandre, Denis; Renaux, Christian; Pinillos Gimenez, Salvador. Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment. In: Journal of Integrated Circuits and Systems, Vol. 14, no.2, p. 8 (2019). doi:10.29292/jics.v14i2.34. http://hdl.handle.net/2078.1/223544

3. Pampin, Rémi; Raskin, Jean-Pierre; Huynen, Isabelle; Flandre, Denis. Electrodes-oxide-semiconductor device for biosensing: Renewed conformal analysis and multilayer algorithm. In: Journal of Electroanalytical Chemistry, , p. 14 (2019). doi:10.1016/j.jelechem.2019.113651 (Accepté/Sous presse). http://hdl.handle.net/2078.1/223541

4. Rudenko, Tamara; Nazarov, Alexei; Barraud, S.; Kilchytska, Valeriya; Flandre, Denis. A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio. In: Solid-State Electronics, Vol. 107723, no.161, p. 26 (2019). doi:10.1016/j.sse.2019.107723 (Accepté/Sous presse). http://hdl.handle.net/2078.1/223532

5. Sandu, Georgiana; Avila Osses, Jonathan; Luciano, Marine; Caina Aysabucha, Darwin Rodolfo; Stopin, Antoine; Bonifazi, Davide; Gohy, Jean-François; Silhanek, Alejandro; Florea, Ileana; Bahri, Mounib; Ersen, Ovidiu; Leclère, Philippe; Gabriele, Sylvain; Vlad, Alexandru; Melinte, Sorin. Kinked Silicon Nanowires: Superstructures by Metal-Assisted Chemical Etching. In: Nano Letters, Vol. 2019, no. 19, p. 7681-7690 (2019). doi:10.1021/acs.nanolett.9b02568. http://hdl.handle.net/2078.1/222469

6. Kazemi Esfeh, Babak; Kilchytska, Valeriya; Planes,N.; Haond, M.; Flandre, Denis; Raskin, Jean-Pierre. 28 nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements extraction at Cryogenic Temperature down to 77 K. In: I E E E Journal of the Electron Devices Society, Vol. 7, p. 810816 (2019). doi:10.1109/JEDS.2019.2906724. http://hdl.handle.net/2078.1/216352

7. Müller, Achim; Vu, Xuan T.; Pachauri, Vivek; Francis, Laurent; Flandre, Denis; Ingebrandt, Sven. Wafer-Scale Nanoimprint Lithography Process Towards Complementary Silicon Nanowire Field-Effect Transistors for Biosensor Applications. In: Physica Status Solidi. A: Applied Research, Vol. 1800234, p. 10 (2018). doi:10.1002/pssa.201800234. http://hdl.handle.net/2078.1/200179

8. Sandu, Georgiana; Coulombier, Michaël; Kumar, Vishank; Kassa, Hailu G.; Avram, Ionel; Ye, Ran; Stopin, Antoine; Bonifazi, Davide; Gohy, Jean-François; Leclère, Philippe; Gonze, Xavier; Pardoen, Thomas; Vlad, Alexandru; Melinte, Sorin. Kinked silicon nanowires-enabled interweaving electrode configuration for lithium-ion batteries. In: Scientific Reports, Vol. 8, p. 9794 (2018). doi:10.1038/s41598-018-28108-3. http://hdl.handle.net/2078.1/200156

9. Li, Guoli; Abliz, Ablat; Xu, Lei; André, Nicolas; Liu, Xingqiang; Zeng, Yun; Flandre, Denis; Liao, Lei. Understanding hydrogen and nitrogen doping on active defects in amorphous In-Gas-Zn-O thin-film transistors. In: Applied Physics Letters, Vol. 112, no.253504, p. 5 (2018). doi:10.1063/1.5032169. http://hdl.handle.net/2078.1/200129

10. Siddharta Garud; Nikhil Gampa; Thomas G. Allen; Ratan Kotipalli; Denis Flandre; Maria Batuk; Joke Hadermann; Marc Meuris; Jef Poortmans; Arno Smets; Bart Vermang. Surface Passivation of CIGS Solar Cells Using Gallium Oxide. In: Physica Status Solidi, Vol. 2015, no.1700826, p. 6 (2018). doi:10.1002/pssa.201700826. http://hdl.handle.net/2078.1/198366

Conference Papers

1. Nyssens, Lucas; Halder, Arka; Kazemi Esfeh, Babak; Planes, Nicolas; Haond, Michel; Flandre, Denis; Raskin, Jean-Pierre; Kilchytska, Valeriya. Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. http://hdl.handle.net/2078.1/223543

2. Delhaye, Thibault; Ge, C.; Francis, Laurent; Flandre, Denis; Cretu, E.. Macro-Modeling Library in Simscape for MEMS Pressure Sensors Based on Energy-Flow Paradigm. In: Proceedings of the conference Design, Test, Integration & Packaging of MEMS/MOEMS, IEEE, 2019. doi:10.1109/DTIP.2019.8752962. http://hdl.handle.net/2078.1/218573

3. Martins d'Oliveira, Ligia; de Souza, Michelly; Kilchytska, Valeriya; Flandre, Denis. Design Benefits of Self-Cascode Configuration for Analog Applications in 28nm FDSOI technology. http://hdl.handle.net/2078.1/197101

4. Kazemi Esfeh, Babak; Masselus, Matthieu; Planes, N.; Haond, M.; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. 28 FDSOI Analog and RF Figures of merit at Cryogenic Temperatures. http://hdl.handle.net/2078.1/197096

5. Francis, Laurent; Sedki, Amor; André, Nicolas; Kilchytska, Valeriya; Gérard, Pierre; Ali, Zeeshan; Udrea, Florin; Flandre, Denis. A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation. In: proceedings of ANIMMA 2017 (EPJ Web of Conferences), EDP Sciences, 2017, p. 4. doi:10.1051/epjconf/201817001006. http://hdl.handle.net/2078.1/197195

6. Debliquy, Marc; Lahem, Driss; Krumpmann, Arnaud; Gonzalez Vila, Alvaro; Raskin, Jean-Pierre; Zhang, Chao; Caucheteur, Christophe. Molecularly Imprinted Polymers for VOC Sensing: chemoresistive and optical Sensors. http://hdl.handle.net/2078.1/194710

7. Tang, Xiaohui; Lahem, Driss; Raskin, Jean-Pierre; Debliquy, Marc. A hybrid gas sensor based on compound of graphene with polypyrrole. http://hdl.handle.net/2078.1/194709

8. Zhukova, Maria; Kotipalli, Raja Venkata Ratan; Poncelet, Olivier; Samain, Louise; Fourdrinier, Lionel; Flandre, Denis. Optoelectrical characterization and simulation of Cu2ZnSnS4absorber layers fabricated by DC magnetron sputtering and rapid thermal processing. http://hdl.handle.net/2078.1/193976

9. Zhukova, Maria; Kotipalli, Raja Venkata Ratan; Poncelet, Olivier; Samain, Louise; Fourdrinier, Lionel; Flandre, Denis. Optoelectrical characterization and simulation of Cu2ZnSnS4absorber layers fabricated by DC magnetron sputtering and rapid thermal processing. http://hdl.handle.net/2078.1/193974

10. Zhukova, Maria; Kotipalli, Raja Venkata Ratan; Samain, Louise; Fourdrinier, Lionel; Flandre, Denis. Characterisation and simulation of Cu2ZnSnS4 absorber layers fabricated by sequential DC magnetron sputtering and rapid thermal processingG. In: proceedings of the 33rd European PV Solar Energy Conference and Exhibition, 2017, 6. http://hdl.handle.net/2078.1/193961