Micro and Nano Technologies and Systems

Figure : Concentration of bacterial cells on the capacitive sensor thanks to AC-electrosmosis

The group forms with the CeRMiN, the UCL Research center for micro- and nano-scopic materials and electronics devices a multidisciplinary team, involving both silicon device physicists, technologists and experimentalists, as well as circuit designers. It gathers about 50 members, out of which 5 professors and more than 36 PhD students and researchers.

Principal Investigators :

Denis Flandre, Laurent Francis, Isabelle Huynen, Dimitri Lederer, Sorin Melinte, Jean-Pierre Raskin

Research Labs : 

RF SOI Group, Sensors, Microsystems and Actuators Laboratory of Louvain (SMALL), Biosensors Group

Research Areas :     

This activity covers the characterization up to 110 GHz, of bulk and nanocomposite materials in various states: solids, foams, liquids, powders, gels, films, … The models created using these measurements allow to extend the range of application of nanostructures, and to develop new sensors and signal processing devices. Of current interest are ferromagnetic nanowires for tunable electronics, carbonated nanoparticles (carbon nanotubes, graphene) for intelligent packaging (EMI shielding, ESD protection, photovoltaic), and nanoporous thin film membranes for fuel cell applications.

Our current projects aim at understanding the fundamental nanoscience of man-made quantum structures, namely semiconductor nanodevices and hybrid inorganic-organic platforms for molecular opto-electronics and plasmonics. In particular, we use high-resolution nanolithography as well as soft-lithography and bottom-up fabrication techniques to engineer smart nano- and microsystems. Recently, our group started the development of cutting-edge instrumentation in the area of scanning tunneling spectroscopy and near-field experimental setups based on photon detection.

ICTEAM has been active in Silicon-on-Insulator (SOI) technology since 1986. Silicon-on-Insulator (SOI) has been a major theme of R&D for more than 20 years, leading to significant contributions with regards to e.g. double-gate MOSFETs, nanowires, high-temperature SOI CMOS, microwaves and millimeter-waves SOI MOSFETs and substrate, Ultra-Low-Power smart sensors (including biosensors) in terms of processing, characterization, simulation, modeling and design.

Bulk and surface micromachining sensors for chemical, medical and harsh environments applications. The group members are focused on varied devices design and fabrication of MEMS and NEMS structures co-integrated with SOI CMOS circuits: design and fabrication of NEMS-based lab-on-chip to characterize the electromechanical properties of materials at nanometer scale, nanowires gas sensors, nanoporous silicon membranes, magnetometers, flow, humidity, pressure and inertial sensors, surface acoustic wave device, etc.

Research infrastructure :

Winfab is equipped with a complete pilot fabrication line on silicon/SOI substrates of about 1,000 m² for the rapid prototyping and validation of new fabrication steps and of new integrated devices or microsystems.

Electrical measurement set-ups available in WELCOME cover a large range of frequencies (from DC up to 110 GHz) and temperatures (from few mK up to 400°C) on wafer-scale as well as packaged circuits levels. Physical (e.g. interface or thin layer properties) and mechanical (adhesion, stress...) characterization are widely available in the CeRMiN environment.

Simulation tools include industry-standard softwares for integrated processes and devices. Device irradiation is available at the nearby cyclotron research centre on a bench qualified by ESA. The wide research results have been honoured by more than 50 invited presentations in international and national conferences, as well as by several awards.

Most recent publications

Below are listed the 10 most recent journal articles and conference papers produced in this research area. You also can access all publications by following this link : see all publications.

Journal Articles

1. Cardinael, Pieter; Yadav, Sachin; Parvais, Bertrand; Raskin, Jean-Pierre. Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates. In: IEEE Journal of the Electron Devices Society, Vol. 12, p. 322-330 (2024). doi:10.1109/JEDS.2024.3386170 (Accepté/Sous presse). http://hdl.handle.net/2078.1/286795

2. Cardinael, Pieter; Yadav, Sachin; Rack, Martin; Peralagu, Uthayasankaran; Alian, Alireza; Parvais, Bertrand; Collaert, Nadine; Raskin, Jean-Pierre. Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity. In: IEEE Microwave and Wireless Technology Letters, Vol. 34, no.3, p. 298-301 (2024). doi:10.1109/lmwt.2024.3355148. http://hdl.handle.net/2078.1/285859

3. Yan, Yiyi; Kilchytska, Valeriya; Flandre, Denis; Raskin, Jean-Pierre. Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack. In: Solid State Electronics, Vol. 207, no.207 (2023). doi:10.1016/j.sse.2023.108675. http://hdl.handle.net/2078.1/281622

4. L. Nyssens; Ma, Shiqi; Rack, Martin; Lederer, Dimitri; Raskin, Jean-Pierre. Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz. In: IEEE Journal of the Electron Devices Society, Vol. 11, no.11, p. 650 - 657 (2023). doi:10.1109/JEDS.2023.3284291. http://hdl.handle.net/2078.1/281464

5. Ziabari, S.A.S; Aziz, S.M; Lederer, Dimitri. A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node. In: Silicon, Vol. 15, no.18, p. 7771-7783 (2023). doi:10.1007/s12633-023-02612-2. http://hdl.handle.net/2078.1/281242

6. Huang, Yang; Yan, Yiyi; Nabet, Massinissa; Liu, Fanyu; Li, Bo; Li, Binhong; Han, Zhengsheng; Nguyen, Bich-Yen; Cristoloveanu, Sorin; Raskin, Jean-Pierre. C-V measurement and modeling of double-BOX Trap-Rich SOI substrate. In: Solid-State Electronics, Vol. 209, p. 108763 (2023). doi:10.1016/j.sse.2023.108763. http://hdl.handle.net/2078.1/278454

7. Halder, Arka; Nyssens, Lucas; Vanbrabant, Martin; Rack, Martin; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. Impact of High Temperature Up to 175 ∘ C on the DC and RF Performances of 22-nm FD-SOI MOSFETs. In: IEEE Transactions on Electron Devices, , p. 1-6 (2023). doi:10.1109/TED.2023.3303150. http://hdl.handle.net/2078.1/277761

8. Halder, Arka; Nyssens, Lucas; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs. In: Solid-State Electronics, Vol. 207, p. 108706 (2023). doi:10.1016/j.sse.2023.108706. http://hdl.handle.net/2078.1/277760

9. Nyssens, Lucas; Rack, Martin; Nabet, Massinissa; Schwan, C.; Zhao, Z.; Lhemann, S.; Lederer, Dimitri; Raskin, Jean-Pierre. High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies. In: Solid-State Electronics, Vol. 205 (2023). doi:10.1016/j.sse.2023.108656. http://hdl.handle.net/2078.1/275661

10. Xu, Chu; Ye, Ran; Zou, Pengxin; Yang, Tianyu; Melinte, Sorin; Wang, Zengbo; Zuo, Chao. Focusing light with a metal film coated patchy particle. In: Optics Express, Vol. 31, no.6, p. 10894 (2023). doi:10.1364/OE.484060. http://hdl.handle.net/2078.1/275350

Conference Papers

1. Kaschten, Vincent; Lederer, Dimitri; Craeye, Christophe. Analysis of GRIN Lenses with PEC Elements Using a 2D Cylindrical Electromagnetic Solver. In: 17th European Conference on Antennas and Propagation (EuCAP),, 2023, 978-1-6654-7541-9 xxx. doi:10.23919/EuCAP57121.2023.10133554. http://hdl.handle.net/2078.1/281471

2. Alkhalifeh, Khaldoun; Vanbrabant, Martin; Rack, Martin; Tihon, Denis; Craeye, Christophe; Raskin, Jean-Pierre; Lederer, Dimitri. Combined Thermo-Reflectance and Thin-Film Coating in Near-Field Imaging of Chip-Package-PCB-Antenna Modules for Industrial-Testing and Failure Analysis. In: Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS), 2023, 979-8-3503-3880-5 xxx. http://hdl.handle.net/2078.1/281469

3. L. Nyssens; Rack, Martin; Tuyaerts, Romain; Lederer, Dimitri; Raskin, Jean-Pierre. Verification of Reference Impedance from Common On-Wafer Calibrations on Commercial Calibration Substrates. 2023 xxx. http://hdl.handle.net/2078.1/281468

4. Ma, Shiqi; L. Nyssens; Raskin, Jean-Pierre; Lederer, Dimitri. Sub-mmWave Transmission Lines on Silicon-Based Technologies. In: 53rd European Microwave Conference, 2023, 978-2-87487-072-9 xxx. http://hdl.handle.net/2078.1/281467

5. Rack, Martin; L. Nyssens; Q.H. Le; D.K. Huynh; T. Kämpfe; Raskin, Jean-Pierre; Lederer, Dimitri. A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain. In: 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, 978-2-87487-073-6 xxx. http://hdl.handle.net/2078.1/281465

6. Courte, Quentin; Rack, Martin; Lederer, Dimitri; Raskin, Jean-Pierre. SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI. In: 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, 978-2-87487-073-6 xxx. http://hdl.handle.net/2078.1/281244

7. Zeidi, Najeh; Rack, Martin; André, Nicolas; Tounsi, Fares; Raskin, Jean-Pierre; Flandre, Denis. Effect of Silicon Substrate Resistivity on Large- Area High-Voltage Spiral Inductor Performance. In: 2023 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS, 2023, 979-8-3503-4132-4 xxx. doi:10.1109/DTIP58682.2023.10267935. http://hdl.handle.net/2078.1/281155

8. Scheen, Gilles; Tuyaerts, Romain; Cardinael, Pieter; Ekoga, Enriqué; Aouadi, Khaled; Pavageau, Christophe; Rassekh, Amin; Nabet, Massinissa; Yadav, Sachin; Raskin, Jean-Pierre; Parvais, Bertrand; Emam, Mostafa. GaN-on-Porous Silicon for RF Applications. In: 2023 53rd European Microwave Conference (EuMC). p. 842-845 (2023). 2023 xxx. doi:10.23919/EuMC58039.2023.10290465. http://hdl.handle.net/2078.1/280804

9. Nabet, Massinissa; Rack, Martin; Huet, Benjamin; Tuyaerts, Romain; Scheen, Gilles; Raskin, Jean-Pierre. High Resistivity Trap-Rich Substrate for RF MEMS Switches. In: 2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP), 2023, 979-8-3503-4131-7 xxx. doi:10.1109/DTIP58682.2023.10267954. http://hdl.handle.net/2078.1/278826

10. Bendou, Youssef; Rack, Martin; Lederer, Dimitri; cathelin, Andreia; Raskin, Jean-Pierre. Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI. In: 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS), 2023, 979-8-3503-0024-6 xxx. doi:10.1109/NEWCAS57931.2023.10198044. http://hdl.handle.net/2078.1/277831