Micro and Nano Technologies and Systems

Figure : Concentration of bacterial cells on the capacitive sensor thanks to AC-electrosmosis

The group forms with the CeRMiN, the UCL Research center for micro- and nano-scopic materials and electronics devices a multidisciplinary team, involving both silicon device physicists, technologists and experimentalists, as well as circuit designers. It gathers about 50 members, out of which 5 professors and more than 36 PhD students and researchers.

Principal Investigators :

Denis Flandre, Laurent Francis, Isabelle Huynen, Dimitri Lederer, Sorin Melinte, Jean-Pierre Raskin

Research Labs : 

RF SOI Group, Sensors, Microsystems and Actuators Laboratory of Louvain (SMALL), Biosensors Group

Research Areas :     

This activity covers the characterization up to 110 GHz, of bulk and nanocomposite materials in various states: solids, foams, liquids, powders, gels, films, … The models created using these measurements allow to extend the range of application of nanostructures, and to develop new sensors and signal processing devices. Of current interest are ferromagnetic nanowires for tunable electronics, carbonated nanoparticles (carbon nanotubes, graphene) for intelligent packaging (EMI shielding, ESD protection, photovoltaic), and nanoporous thin film membranes for fuel cell applications.

Our current projects aim at understanding the fundamental nanoscience of man-made quantum structures, namely semiconductor nanodevices and hybrid inorganic-organic platforms for molecular opto-electronics and plasmonics. In particular, we use high-resolution nanolithography as well as soft-lithography and bottom-up fabrication techniques to engineer smart nano- and microsystems. Recently, our group started the development of cutting-edge instrumentation in the area of scanning tunneling spectroscopy and near-field experimental setups based on photon detection.

ICTEAM has been active in Silicon-on-Insulator (SOI) technology since 1986. Silicon-on-Insulator (SOI) has been a major theme of R&D for more than 20 years, leading to significant contributions with regards to e.g. double-gate MOSFETs, nanowires, high-temperature SOI CMOS, microwaves and millimeter-waves SOI MOSFETs and substrate, Ultra-Low-Power smart sensors (including biosensors) in terms of processing, characterization, simulation, modeling and design.

Bulk and surface micromachining sensors for chemical, medical and harsh environments applications. The group members are focused on varied devices design and fabrication of MEMS and NEMS structures co-integrated with SOI CMOS circuits: design and fabrication of NEMS-based lab-on-chip to characterize the electromechanical properties of materials at nanometer scale, nanowires gas sensors, nanoporous silicon membranes, magnetometers, flow, humidity, pressure and inertial sensors, surface acoustic wave device, etc.

Research infrastructure :

Winfab is equipped with a complete pilot fabrication line on silicon/SOI substrates of about 1,000 m² for the rapid prototyping and validation of new fabrication steps and of new integrated devices or microsystems.

Electrical measurement set-ups available in WELCOME cover a large range of frequencies (from DC up to 110 GHz) and temperatures (from few mK up to 400°C) on wafer-scale as well as packaged circuits levels. Physical (e.g. interface or thin layer properties) and mechanical (adhesion, stress...) characterization are widely available in the CeRMiN environment.

Simulation tools include industry-standard softwares for integrated processes and devices. Device irradiation is available at the nearby cyclotron research centre on a bench qualified by ESA. The wide research results have been honoured by more than 50 invited presentations in international and national conferences, as well as by several awards.

Most recent publications

Below are listed the 10 most recent journal articles and conference papers produced in this research area. You also can access all publications by following this link : see all publications.

Journal Articles

1. Halder, Arka; Nyssens, Lucas; Vanbrabant, Martin; Rack, Martin; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. Impact of High Temperature Up to 175 ∘ C on the DC and RF Performances of 22-nm FD-SOI MOSFETs. In: IEEE Transactions on Electron Devices, , p. 1-6 (2023). doi:10.1109/TED.2023.3303150. http://hdl.handle.net/2078.1/277761

2. Halder, Arka; Nyssens, Lucas; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs. In: Solid-State Electronics, Vol. 207, p. 108706 (2023). doi:10.1016/j.sse.2023.108706. http://hdl.handle.net/2078.1/277760

3. Nyssens, Lucas; Rack, Martin; Nabet, Massinissa; Schwan, C.; Zhao, Z.; Lhemann, S.; Lederer, Dimitri; Raskin, Jean-Pierre. High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies. In: Solid-State Electronics, Vol. 205 (2023). doi:10.1016/j.sse.2023.108656. http://hdl.handle.net/2078.1/275661

4. Xu, Chu; Ye, Ran; Zou, Pengxin; Yang, Tianyu; Melinte, Sorin; Wang, Zengbo; Zuo, Chao. Focusing light with a metal film coated patchy particle. In: Optics Express, Vol. 31, no.6, p. 10894 (2023). doi:10.1364/OE.484060. http://hdl.handle.net/2078.1/275350

5. Roisin, Nicolas; Colla, Marie-Stéphane; Raskin, Jean-Pierre; Flandre, Denis. Raman Strain-Shift Measurements and Prediction from First-Principles in Highly-Strained Silicon. In: Journal of Materials Science: Materials in Electronics, Vol. 34, p. 373 (2023). doi:10.1007/s10854-022-09769-3. http://hdl.handle.net/2078.1/272249

6. Tang, Xiaohui; Raskin, Jean-Pierre; Reckinger, Nicolas; Yan, Yiyi; André,Nicolas; Lahem, Driss; Debliquy, Marc. Enhanced Gas Detection by Altering Gate Voltage Polarity of Polypyrrole/Graphene Field-Effect Transistor Sensor. In: Chemosensors, Vol. 10, no.11, p. 467 (2022). doi:10.3390/chemosensors10110467. http://hdl.handle.net/2078.1/269245

7. Moulin, M.; Rack, Martin; Fache, T.; Chalupa, Z.; Plantier, C.; Morand, Y.; Lacord, J.; Allibert, F.; Gaillard, F.; Lugo, J.; Hutin, L.; Raskin, Jean-Pierre. High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications. In: Solid-State Electronics, Vol. 194, p. 108301 (2022). doi:10.1016/j.sse.2022.108301. http://hdl.handle.net/2078.1/269243

8. Vanbrabant, Martin; Nyssens, Lucas; Kilchytska, Valeriya; Raskin, Jean-Pierre. Back-Gate Lumped Resistance Effect on AC Characteristics of FD-SOI MOSFET. In: IEEE Microwave and Wireless Components Letters, Vol. 32, no.6, p. 704-707 (2022). doi:10.1109/lmwc.2022.3162497. http://hdl.handle.net/2078.1/269241

9. Bertrand, Isabelle; Flatresse, Philippe; Besnard, Guillaume; Bethoux, Jean-Marc; Chalupa, Zdenek; Plantier, Christophe; Rack, Martin; Nabet, Massinissa; Raskin, Jean-Pierre; Allibert, Frederic. Development Of High Resistivity FD-SOI Substrates for mmWave Applications. In: ECS Transactions, Vol. 108, no.5, p. 31-45 (2022). doi:10.1149/10805.0031ecst. http://hdl.handle.net/2078.1/269240

10. Shaik, Rameez Raja; Chandrasekar, L.; Raskin, Jean-Pierre; Pradhan, K.P. Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET. In: Microelectronics Journal, Vol. 121, p. 105365 (2022). doi:10.1016/j.mejo.2022.105365. http://hdl.handle.net/2078.1/269236

Conference Papers

1. Bendou, Youssef; Rack, Martin; Lederer, Dimitri; cathelin, Andreia; Raskin, Jean-Pierre. Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI. In: 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS), 2023, 979-8-3503-0024-6 xxx. doi:10.1109/NEWCAS57931.2023.10198044. http://hdl.handle.net/2078.1/277831

2. Huang, Yang; Yan, Yiyi; Nabet, Massinissa; Liu, Fanyu; Li, Bo; Li, Binhong; Han, Zhengsheng; Nguyen, Bich-Yen; Cristoloveanu, Sorin; Raskin, Jean-Pierre. C-V Measurement and Modeling of Double-BOX Trap-Rich SOI Substrate. In: 9th Joint Intl EuroSOI Workshop and International Conf On Ultimate Integration on Silicon 2023, 2023 xxx. http://hdl.handle.net/2078.1/275592

3. Van Ruymbeke, Michel; Toussaint, Sébastien; Wielant, François; Karatekin, Ozgur. The gravimeter "B-grav" for in-situ gravity measurements at the surface of an asteroid. 2023 xxx. http://hdl.handle.net/2078.1/275316

4. Francis, Laurent; Roisin, Nicolas; Colla, Marie-Stéphane; Flandre, Denis; Raskin, Jean-Pierre. Improving the determination of strain in the deformed Silicon measured by Raman spectroscopy. In: International Meeting on Optical Measurement Techniques and Industrial Applications, 2023 xxx. http://hdl.handle.net/2078.1/274018

5. Fache, T.; Moulin, Maxime; Charlet, I.; Chalupa, Z.; Raskin, Jean-Pierre; Allibert, F.; Plantier, C.; Gaillard, F.; Hutin, L.. Buried PN junctions impact on the performances of an inductor at RF frequencies. 2023 xxx. http://hdl.handle.net/2078.1/271163

6. Perrosé, M.; Acosta Alba, P.; Moulin, Maxime; Augendre, E.; Lugo, J.; Raskin, Jean-Pierre; Reboh, S.. RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing. 2023 xxx. http://hdl.handle.net/2078.1/271162

7. Merle, Stéphanie; Raskin, Jean-Pierre. IngénieuxSud - Study, design and installation of street lighting and a nursery in Dwale, Democratic Republic of Congo. 2022 xxx. http://hdl.handle.net/2078.1/271160

8. Francis, Laurent; Moumneh, Ramy; Hanus, Romain; Le Brun, Grégoire; Raskin, Jean-Pierre. Harvesting the blue energy using paper-based microfluidics. In: Euro-Mediterranean Conference on Materials, Devices and Systems - EMCM-DS 2022, 2022 xxx. http://hdl.handle.net/2078.1/271158

9. Mai, T.; Leenaers, A.; Wight, J.; Pardoen, Thomas; Van den Berghe, S.; André, Nicolas; Coulombier, N.; Raskin, Jean-Pierre. Holistic approach to investigate burn-up dependent thermal conductivity in dispersed fuel plates. 2022 xxx. http://hdl.handle.net/2078.1/271156

10. Yadav, S.; Cardinael, Pieter; Zhao, M.; Vondkar, K.; Peralagu, U.; Alian, A.; Rodriguez, R.; Khaled, A.; Makovejev, S.; Ekoga, E.; Lederer, Dimitri; Raskin, Jean-Pierre; Parvais, B.; Collaert, N.. Substrate effects in GaN-on-Si HEMT technology for RF FEM applications. In: The 242nd ElectroChemical Society Meeting – ECS 2022, 2022, p. Poster P3.42 xxx. doi:10.1149/MA2022-02321208mtgabs. http://hdl.handle.net/2078.1/270888